Transparent amorphous carbon structure in semiconductor devices

Abstract

A transparent amorphous carbon layer is formed. The transparent amorphous carbon layer has a low absorption coefficient such that the amorphous carbon is transparent in visible light. The transparent amorphous carbon layer may be used in semiconductor devices for different purposes. The transparent amorphous carbon layer may be included in a final structure in semiconductor devices. The transparent amorphous carbon layer may also be used as a mask in an etching process during fabrication of semiconductor devices.

Description

RELATED APPLICATIONS [0001] This application is a Divisional of U.S. application Ser. No. 10 / 661,379, filed Sep. 12, 2003. [0002] This application is related to the following co-pending and commonly assigned application; attorney docket number 303.869US1, application Ser. No. 10 / 661,100, filed Sep. 12, 2003, entitled “MASKING STRUCTURE HAVING MULTIPLE LAYERS INCLUDING AN AMORPHOUS CARBON LAYER” which is hereby incorporated by reference.FIELD OF INVENTION [0003] The present invention relates generally to semiconductor devices, more particularly to masking structures in the semiconductor devices. BACKGROUND [0004] Semiconductor devices such as memory devices reside in many computers and electronic products to store data. A typical semiconductor device has many layers of different materials formed on a semiconductor wafer. [0005] During manufacturing, the layers go through many processes. For example, a patterning process puts patterns on the layers. Some patterning processes use a mas...

AI Technical Summary

Benefits of technology

The transparent amorphous carbon layer enables accurate alignment mark reading and allows for specific thicknesses necessary in semiconductor manufacturing without the limitations of conventional masks, enhancing the precision and applicability of masking structures in semiconductor devices.

Problems solved by technology

However, an amorphous carbon mask at some thickness may have a high absorption of optical light, causing the amorphous carbon mask inapplicable for some processes.

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