Semiconductor thin film decomposing method, decomposed semiconductor thin film, decomposed semiconductor thin film evaluation method, thin film transistor made of decomposed semiconductor thin film, and image display device having circuit constituted of thin film transistors

Abstract

A surface roughness of a polycrystalline semiconductor film to be formed by a laser annealing method is reduced. A transmittance distribution filter is disposed at the optical system of a laser annealing apparatus. The transmittance distribution filter controls an irradiation light intensity distribution along a scanning direction of a substrate formed with an amorphous silicon semiconductor thin film to have a distribution having an energy part equal to or higher than a fine crystal threshold on a high energy light intensity side and an energy part for melting and combining only a surface layer. This transmittance distribution filter is applied to an excimer laser annealing method, a phase shift stripe method or an SLS method respectively using a general line beam to thereby reduce the height of protrusions on a polycrystalline surface.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application is a Divisional application of U.S. application Ser. No. 10 / 900,365 filed Jul. 28, 2004. The present application claims priority from U.S. application Ser. No. 10 / 900,365 filed Jul. 28, 2004, which claims priority from Japanese application 2003-364539 filed on Oct. 24, 2003, the content of which is hereby incorporated by reference into this application.BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to a semiconductor thin film decomposing method of decomposing an amorphous semiconductor thin film into a polycrystalline semiconductor thin film, a decomposed semiconductor thin film evaluation method, a thin film transistor made of a decomposed semiconductor thin film, and a semiconductor device including a flat panel type image display device having a circuit constituted of thin film transistors. [0004] 2. Description of the Related Art [0005] A flat panel type image disp...

AI Technical Summary

Benefits of technology

[0031] The position of the mask 26 corresponds to the first order focussing plane of the optical system shown in FIG. 1. The mask 26 forms a bright / dark pattern of a light intensity on the surface of the substrate 1 to form a temperature gradient in the in-plane direction, enhance crystal growth in a lateral direction (a direction perpendicular to the scanning direction, or a width direction), and form crystals of a large grain size. As will be described with reference to FIG. 14, a transmittance in-plane distribution control filter, i.e., transmittance distribution filter 31 of the present invention is disposed near the mask 26 to control the light intensity of a laser beam transmitting through each pattern of the mask.

[0045] According to the semiconductor thin film decomposition method of the present invention, laser beam irradiation at a plurality of energy densities can be realized by one scan. Further, the protrusion reduction effect by laser beam irradiation at a plurality of energy densities during a plurality of scans can reduce random protrusions on a substrate surface due to a difference of a pulse duration in each scan so that there is no area having a surface roughness at a PV value of 70 nm or more. Even if the surface roughness becomes 70 nm or more because of some reason, all protrusions on the whole surface are inspected to detect an area at 70 nm or more. This detected area is re-crystallized to lower the protrusion height so that the protrusion can be set lower than 70 nm. A TFT using a polysilicon film having a protrusion at 70 nm can use a gate insulating film having a thickness of 110 nm or thinner in order to prevent dielectric breakdown defects, if a generally used tetraethylorthosilicate (TEOS) film is used.

[0046] A thin film transistor of the present invention has a high mobility. In an image display device using such thin film transistors, thin film transistors in a drive circuit and a pixel circuit can be speeded up and can be made very fine so that an image quality can be improved.

Problems solved by technology

The method of irradiating a laser beam at a plurality of energy densities to an amorphous silicon semiconductor thin film in order to reduce protrusions to be formed on a surface of a polysilicon semiconductor thin film formed by crystallizing the amorphous silicon semiconductor thin film has the disadvantage of a long crystallizing process time because a large number of scanning times at each energy density of an irradiated laser beam.

It also has the disadvantage that the protrusion reduction effect by a plurality of superposed scans at a different scanning pitch becomes irregular on a substrate (on a semiconductor thin film formed on a substrate such as a glass substrate, this being applicable in the following description).

Even crystallization is performed by a method providing a larger grain size and reducing protrusions, the grain size and protrusion height do not always satisfy the management standards because there are a fluctuation of a laser output with time and an in-plane variation of an amorphous semiconductor thin film thickness.

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