Formation of gate dielectrics with uniform nitrogen distribution
a technology of nitrogen distribution and gate dielectric, which is applied in the direction of semiconductor devices, electrical apparatus, transistors, etc., can solve the problems of nitrogen non-uniformity and nitrogen non-uniformity reduction, and achieve the effect of reducing nitrogen non-uniformity and nitrogen non-uniformity
Inactive Publication Date: 2007-03-22
TEXAS INSTR INC
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Benefits of technology
The present invention provides a method for manufacturing a gate dielectric with a non-uniformity of nitrogen in a bulk of the layer. This non-uniformity can be reduced by exposing the nitrided dielectric layer to oxygen radicals. This method can be used to form an integrated circuit with improved performance. The technical effect of this invention is to provide a more uniform and high-quality gate dielectric that can enhance the performance of integrated circuits.
Problems solved by technology
The nitrided dielectric layer is exposed to oxygen radicals, thereby resulting in a reduction in the non-uniformity of nitrogen.
The nitrided dielectric layer is exposed to oxygen radicals, resulting in a reduction in the non-uniformity of nitrogen.
Method used
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[0018] Turning to FIGS. 1-8, illustrated are cross-sectional views illustrating how one skilled in the art might manufacture a semiconductor device in accordance with the principles of the present invention. While FIGS. 1-8 are specifically directed to the manufacture of a semiconductor device, FIGS. 1-8 also illustrate, in a broad sense, how one skilled in the art might manufacture a gate dielectric with improved nitrogen uniformity, in accordance with the principles of the present invention. Thus, a method for manufacturing a gate dielectric is discussed within the confines of discussing how one skilled in the art might manufacture a semiconductor device with respect to FIGS. 1-8. Nevertheless, while each of these ideas is discussed and illustrated using a single set of FIGURES, neither should be limiting on the other.
[0019] Referring initially to FIG. 1, illustrated is a cross-section of a partially fabricated semiconductor device 100 having a substrate 110 and a dielectric laye...
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The present invention provides a method for manufacturing a gate dielectric (710) that includes providing a nitrided dielectric layer (220) over a substrate (120). The nitrided dielectric layer (220) has a nonuniform concentration of nitrogen in a bulk thereof. The nitrided dielectric layer (220) is exposed to oxygen radicals (410), resulting in a reduction of the non-uniformity.
Description
TECHNICAL FIELD OF THE INVENTION [0001] The present invention is directed, in general, to a method of forming a gate dielectric, and in particular, a method of forming a nitrided gate dielectric with a uniform distribution of nitrogen in the bulk thereof. BACKGROUND OF THE INVENTION [0002] In certain semiconductor applications it is necessary to integrate dual gate oxide (DGO) thicknesses for associated transistor devices onto a single integrated circuit device. One motivation for performing dual gate oxide processing is that high performance transistors typically operate at lower voltages (e.g., 0.8 volts to 1.5 volts), and thus require thinner gate dielectric regions, whereas devices that interface with most conventional external peripherals typically require higher operating voltages (e.g., 1.8 volts to 3.5 volts), and thus require thicker gate dielectric regions. When interfacing lower voltage high performance metal-oxide-semiconductor field-effect-transistors (MOSFETs) within a...
Claims
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IPC IPC(8): H01L21/336
CPCH01L21/28202H01L21/3105H01L21/3145H01L29/7833H01L21/823857H01L29/518H01L29/6659H01L21/823462H01L21/0214H01L21/0234H01L21/02332
Inventor NIIMI, HIROAKILAAKSONEN, REIMA T.
Owner TEXAS INSTR INC