Piezoelectric thin film resonator and manufacturing method thereof

Inactive Publication Date: 2007-07-05
MURATA MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0027] According to the piezoelectric thin film resonator and the manufacturing method thereof, by unif

Problems solved by technology

Heretofore, planarization has not been studied for an air-bridge type piezoelectric thin film resonator.
Hence, irregularities are formed on the structural film which is to be polished.
Accordingly, even when the structural film on the sacrifice layer is polished, film-thickness distribution is generated, and as a result, superior resonant properties cannot be obtained.
In order to avoid this problem, a method may be used in which after a burying material is buried in concave portions, planarization is performed by CMP, and the burying material is then removed; howe

Method used

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  • Piezoelectric thin film resonator and manufacturing method thereof
  • Piezoelectric thin film resonator and manufacturing method thereof
  • Piezoelectric thin film resonator and manufacturing method thereof

Examples

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Embodiment Construction

[0039] hereinafter, examples will be described as embodiments according to the present invention with reference to FIG. 1. FIG. 1(a) is a cross-sectional view taken along the line A-A in FIG. 1(b), and FIG. 1(b) is a plan view.

[0040] As schematically shown in FIG. 1, a piezoelectric thin film resonator 10 is formed of a substrate 11 and a thin film member (membrane) provided thereon, the thin film member including a dielectric film 12, a lower electrode 14, a piezoelectric thin film 16, and an upper electrode 18. An airspace layer 13 (see FIG. 1(a)) is formed between the substrate 11 and the dielectric film 12. The dielectric film 12 includes support portions supported by the substrate 11 and a floating portion floating over the substrate 11. On the floating portion of the dielectric film 12 at a position opposite to the airspace layer 13, a vibration portion 19 floating over the substrate 11 is formed in a region in which the electrodes 14 and 18 are overlapped with each other. Th...

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Abstract

A piezoelectric thin film resonator which can reduce variations in resonant frequency and resonant resistance by uniformly planarizing a structural film, and a method of manufacturing the piezoelectric thin film resonator. The piezoelectric thin film resonator has a substrate having at least one flat major surface; a dielectric film having two support portions supported by the major surface of the substrate and a floating portion which is connected to the support portions and which is disposed over the major surface of the substrate with an airspace layer provided therebetween; and a vibration portion which is formed of a pair of electrodes and a piezoelectric thin film provided therebetween and which is provided on the floating portion of the dielectric film at a side opposite to the airspace layer. A surface of the dielectric film at a side opposite to the substrate is planarized by a plasma treatment using an inert gas or a gas containing an element forming a dielectric film.

Description

CROSS REFERENCE TO RELATED APPLICATIONS [0001] The present application is a continuation of International Application No. PCT / JP2005 / 022300, filed Dec. 5, 2005, which claims priority to Japanese Patent Application No. JP2004-373761, filed Dec. 24, 2004, the entire contents of each of these applications being incorporated herein by reference in their entirety.FIELD OF THE INVENTION [0002] The present invention relates to a piezoelectric thin film resonator and a manufacturing method thereof. BACKGROUND OF THE INVENTION [0003] In a so-called air-bridge type piezoelectric thin film resonator, in order to acoustically separate a vibration portion, which is formed of a pair of excitation electrodes facing each other and a piezoelectric thin film provided therebetween, from a substrate, the structure is formed in which a thin film member (membrane) partly floats over the substrate with an airspace layer provided there between. Patent Document 1: Japanese Unexamined Patent Application Publ...

Claims

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Application Information

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IPC IPC(8): H01L41/00H01L41/09H01L41/18H01L41/22H01L41/332H01L41/338H01L41/39H03H3/02H03H9/17
CPCH03H3/04H03H9/173H03H2003/021Y10T29/49005Y10T29/49798Y10T29/42Y10T29/49155Y10T29/49128
Inventor FUJII, HIDETOSHIKUBO, RYUICHI
Owner MURATA MFG CO LTD
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