Polishing device and method
a technology of polishing device and polishing pad, which is applied in the direction of abrasive surface conditioning device, manufacturing tools, lapping machines, etc., can solve the problems of increasing the actual size of the polishing pad, increasing and poor uniformity of the wafer in a larger area, so as to reduce the cost of the cmp process
Inactive Publication Date: 2007-11-22
ELPIDA MEMORY INC
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- Abstract
- Description
- Claims
- Application Information
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Benefits of technology
[0013]In view of the problem of the conventional polishing device and polishing process as described above, it is an object of the present invention to provide a polishing device and a polishing method which are capable of reducing the cost for the CMP process.
Problems solved by technology
The CMP process is generally effective for eliminating the step difference on the surface of the semiconductor wafer; however, causes a relatively poor within wafer uniformity in a larger wafer area after the polishing.
The smaller ratio of the effective polishing area to the total area of the polishing pad inevitably increases the actual size of the polishing pad, thereby increasing the cost for the CMP process.
The larger size of the polishing pad involves a difficulty in achieving the stable dressing treatment and increases the number of times of the dressing treatment.
The larger number of times of the dressing treatment reduces the lifetime of the dresser to further increase the cost for the CMP process.
Therefore, only an adjustment of the load by using the periphery pressing member in the polishing head is insufficient for achieving the required within wafer uniformity.
Method used
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Embodiment Construction
[0027]Now, exemplary embodiment of the present invention will be described with reference to accompanying drawings, wherein similar constituent elements are designated by similar reference numerals throughout the drawings.
[0028]FIG. 1 is a sectional view of a polishing device (CMP device) according to an embodiment of the present invention, particularly showing the polishing head and the vicinity thereof in the polishing device. FIG. 2 is a top plan view of the CMP device of FIG. 1.
[0029]As shown in FIGS. 1 and 2, the polishing device, generally designated at numeral 10, according to the present invention includes the polishing head 11, a pair of main polishing pads 15 and 19, a subordinate polishing pad 22, dressers 18 and 21, slurry supply nozzles 17 and 20, and a polishing pad control unit 23. The polishing head 11 holds thereon a target semiconductor wafer 12 to be polished. The pair of main polishing pads 15 and 19 are made of polyurethane and have a diameter substantially same...
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Abstract
A polishing device includes a polishing head for pressing and holding a semiconductor wafer, a pair of polishing pads having the same diameter as the polishing head for polishing the semiconductor wafer, and a subordinate polishing pad having a smaller diameter for polishing a peripheral portion of the semiconductor wafer. Both the pair of polishing pads are rotated in one direction, or in opposite directions. The rotational speed of the first and / or second polishing pad is controlled so that an equal polishing rate is obtained for the first and second polishing pads when the polishing pads are rotated in opposite directions.
Description
BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to polishing device and method. In particular, the present invention relates to an improvement of the polishing device and method generally used for polishing a wafer.[0003]2. Description of the Related Art[0004]Along with development of a finer design rule in the semiconductor fabrication process, a higher degree of flatness is requested for the surface of a semiconductor wafer in each step of the process for manufacturing semiconductor devices.[0005]For achieving a flat surface of the film on the wafer, attempts have been made to satisfy the requested degree of flatness by improving the flatness of the surface of the as-deposited film itself, and by using a reflow technique such as annealing coated films including a SOG (spin on glass) film and a BPSG (borophospho-silicate glass) film at a high temperature. The CMP technique, which directly polishes the surface of the semiconductor wafer,...
Claims
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Patent Timeline
Login to View More IPC IPC(8): B24B7/30B24B29/00B24B1/00B24B37/10B24B37/12B24B53/017H01L21/304
CPCB24B37/24B24B49/006B24B37/30
Inventor SAITO, TOSHIYA
Owner ELPIDA MEMORY INC