Method for fabricating metal-insulator-metal capacitor
a metal-insulator and capacitor technology, applied in the field of capacitor fabrication, can solve the problems of lowering the breakdown voltage of the capacitor, the reliability of the capacitor may be seriously compromised, and the capacitance of the capacitor may not be sufficient per unit area for proper functioning, etc., to achieve the effect of increasing the breakdown voltage and the reliability of the mim capacitor
Inactive Publication Date: 2008-04-17
LIN PING WEI +2
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Benefits of technology
[0008] Accordingly, at least one objective of the present invention is to provide a method for fabricating a metal-insulator-metal (MIM) capacitor capable of increasing the breakdown voltage and the reliability of the MIM capacitor.
[0009] At least another objective of the present invention is to provide an alternative method for fabricating a metal-insulator-metal (MIM) capacitor equally capable of increasing the breakdown voltage and the reliability of the MIM capacitor.
[0024] In the present invention, a plasma treatment is performed to the surface of a first metal layer so that the surface of the metal layer is planarized. Thus, the breakdown voltage is increased and the reliability of the capacitor is enhanced, and the prior problem of having a low breakdown voltage in the capacitor is alleviated. Furthermore, the method can also include performing a plasma treatment on the surface of the nitride layer or on the surface of both the first metal layer and the nitride layer, for increasing the breakdown voltage and improving the reliability of the capacitor.
Problems solved by technology
Therefore, for an electronic product that incorporates a capacitor, the capacitor may have insufficient capacitance per unit area for proper functioning.
However, due to the unevenness of the metal layer that serves as the bottom electrode, the foregoing method of reducing the thickness of the dielectric layer above the bottom electrode may lead to lowering of the breakdown voltage of the capacitor.
In some cases, even the reliability of the capacitor may be seriously compromised.
Method used
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[0030] Reference will now be made in detail to the present preferred embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and the description to refer to the same or like parts.
[0031]FIGS. 1A through 1G are schematic cross-sectional views showing the steps for fabricating a metal-insulator-metal capacitor according to one embodiment of the present invention. As shown in FIG. 1A, a substrate 100 is provided. The substrate 100 is a silicon substrate or a substrate having semiconductor devices or metallic interconnect structures already formed thereon, for example. Then, a metal layer 102 is formed over the substrate 100 to serve as the bottom electrode of a metal-insulator-metal (MIM) capacitor. The metal layer 102 is fabricated using aluminum, copper, palladium, ruthenium, titanium nitride or tantalum nitride, for example. The method of forming the metal layer 102 includes...
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Abstract
A method for fabricating a metal-insulator-metal capacitor is described. A first metal layer is formed on a substrate. A plasma treatment is performed on the surface of the first metal layer. Then, a first oxide layer, a nitride layer and a second oxide layer are formed in sequence over the first metal layer. Thereafter, a second metal layer is formed on the second oxide layer. The second metal layer, the second oxide layer, the nitride layer, the first oxide layer and the first metal layer are defined to form the metal-insulator-metal capacitor.
Description
BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to a method for fabricating a capacitor. More particularly, the present invention relates to a method for fabricating a metal-insulator-metal capacitor. [0003] 2. Description of the Related Art [0004] With great advances in technologies, semiconductor devices have found increasing number of applications. A large number of semiconductor devices each having a different function is used inside computers, communication equipment and consumer electronic products. Capacitor is one of the most basic and important semiconductor devices that has a number of functions including the de-coupling of noise and the storage of electric charges. Among the various types of capacitors, the metal-insulator-metal (MIM) capacitor plays an important role in circuits, particularly in mixed circuits of signal devices and logic devices. [0005] The conventional method of fabricating a metal-insulator-metal capaci...
Claims
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IPC IPC(8): B05D3/04C23C14/35
CPCH01L28/40
Inventor LIN, PING-WEIWU, CHIN-CHIACHIANG, CHAO-SHENG
Owner LIN PING WEI