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Method of making a wafer having an asymmetric edge profile

a technology of asymmetric edge profile and asymmetric wafer, which is applied in the direction of manufacturing tools, semiconductor/solid-state device details, transportation and packaging, etc., can solve the problems of increasing the probability of cracking of standard wafer b>10/b>, affecting the yield of standard wafer, and affecting the quality of standard wafers. , to achieve the effect of reducing the probability of cracking to the wafer and increasing the yield

Inactive Publication Date: 2009-01-22
TOUCH MICRO SYST TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a wafer with an asymmetric edge profile to reduce the likelihood of cracking and increase yield. The wafer has a disk-like body with a first main surface and a second main surface parallel to the first main surface, and an edge region. The edge region has an edge profile that is asymmetric with respect to the central line of the first and second main surfaces.

Problems solved by technology

As a result, if the edge region of a wafer is perpendicular to the first main surface (front side) and the second surface (back side) of the wafer, the wafer may easily stick in the cassettes or be damaged by the robots' clipping.
Furthermore, the perpendicular edge region of the wafer may easily crack due to the stress generated by temperature change in the following processes.
As a result, the standard wafer 10 has an increased likelihood of sticking in the cassettes.

Method used

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  • Method of making a wafer having an asymmetric edge profile
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  • Method of making a wafer having an asymmetric edge profile

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Embodiment Construction

[0016]Please refer to FIGS. 3 to 5. FIGS. 3 to 5 are schematic diagrams of a method of fabricating a wafer having an asymmetric edge profile according to a preferred embodiment of the present invention. As shown in FIG. 3, a wafer 30 is first provided. The present invention takes a wafer with a diameter of 8 inches and a thickness of 725 micrometers as an example for illustrating the characteristics of the present invention, but the application is not limited to this example. The wafer 30 comprises a disk-like body 32, a first main surface 34, a second main surface 36 parallel to the first main surface 34, and an edge region 38 perpendicular to the first main surface 34 and the second main surface 36, wherein the first main surface 34 and the second main surface 36 define a central line C1 between them. Subsequently, the wafer 30 is cut along an angle α from a point G1 in the second main surface 36 of the wafer 30, so as to form a first inclined surface S1 in the edge region 38. Spe...

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Abstract

A wafer having an asymmetric edge profile is provided. The wafer has a disk-like body. The disc-like body has a first main surface, a second main surface parallel to the first main surface, and an edge region. The disk-like body has a central line defined between the first main surface and the second main surface, the edge region has an edge profile, and the edge profile is asymmetric with respect to the central line of the first main surface and the second main surface.

Description

CROSS REFERENCE TO RELATED APPLICATIONS[0001]This divisional application claims the benefit of co-pending U.S. application Ser. No. 11 / 456,090, filed on Jul. 7, 2006 and included herein by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The invention relates to a wafer having an asymmetric edge profile and a method of making the same, and more particularly, to a low stress wafer and a method of making the same.[0004]2. Description of the Prior Art[0005]Wafers are important bases of fabricating ultra-large scale integrated (ULSI) circuit components. With the development of crystal growth technologies, the diameters of wafers have increased from 25 millimeters in the early days of the technology to 300 millimeters (12 inches) at present. The fabricating process of the wafers includes the following main steps. First, a semiconductor liquid raw material, such as silicon, is prepared. Subsequently, a crystal pulling process is performed utilizing a seed to form ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): B24B1/00B24B9/00
CPCH01L21/02021H01L23/544Y10T428/219H01L2223/54493H01L29/0657H01L2924/0002H01L2924/00
Inventor KUO, CHIH-PING
Owner TOUCH MICRO SYST TECH