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Lithographic apparatus and device manufacturing method

Inactive Publication Date: 2009-02-12
ASML NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0010]In an aspect of the invention, there is provided a method for generating a radiation for use in a lithographic apparatus, the method including supplying a fuel to a discharge space located between a cathode and an anode; creating a discharge between the cathode and the anode in the fuel to form a plasma; and adjusting a volume defined by the plasma by controlling radiation emission by the plasma, the adjusting including supplying a substance to the plasma to control the radiation emission.
[0011]In an aspect of the invention, there is provided a device manufacturing method including generating a beam of radiation, the generating including supplying a fuel to a discharge space located between a cathode and an anode; creating a discharge between the cathode and the anode in the fuel to form a plasma; and adjusting a volume defined by the plasma by controlling radiation emission by the plasma, the adjusting including supplying a substance to the plasma to control the radiation emission; patterning the beam of radiation to form a patterned beam of radiation; and projecting the patterned beam of radiation onto a substrate.
[0012]In an aspect of the invention, th

Problems solved by technology

At present, no alternative technology seems to provide the desired pattern architecture with similar accuracy, speed, and economic productivity.

Method used

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  • Lithographic apparatus and device manufacturing method
  • Lithographic apparatus and device manufacturing method
  • Lithographic apparatus and device manufacturing method

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Embodiment Construction

[0020]FIG. 1 schematically depicts a lithographic apparatus 1 according to an embodiment of the present invention. The apparatus 1 includes a source SO configured to generate radiation, an illumination system (illuminator) IL configured to condition a radiation beam B (e.g. EUV radiation) from the radiation received from source SO. The source SO may be provided as a separate unit. A support or pattern support (e.g. a mask table) MT is configured to support a patterning device (e.g. a mask) MA and is connected to a first positioning device PM configured to accurately position the patterning device MA in accordance with certain parameters. A substrate table or substrate support (e.g. a wafer table) WT is configured to hold a substrate (e.g. a resist-coated wafer) W and is connected to a second positioning device PW configured to accurately position the substrate W in accordance with certain parameters. A projection system (e.g. a refractive projection lens system) PS is configured to ...

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PUM

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Abstract

A lithographic system includes a source configured to generate a radiation, the source including a cathode and an anode, the cathode and the anode configured to create a discharge in a fuel located in a discharge space so as to generate a plasma, the discharge space including, in use, a substance configured to adjust radiation emission by the plasma so as to control a volume defined by the plasma; a pattern support configured to hold a patterning device, the patterning device configured to pattern the radiation to form a patterned beam of radiation; a substrate support configured to support a substrate; and a projection system configured to project the patterned beam of radiation onto the substrate.

Description

BACKGROUND[0001]1. Field[0002]The present invention relates to a lithographic apparatus and methods.[0003]2. Description of the Related Art[0004]A lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In that instance, a patterning device, which is alternatively referred to as a mask or a reticle, may be used to generate a circuit pattern to be formed on an individual layer of the IC. This pattern can be transferred onto a target portion (e.g. including part of one or several dies) on a substrate (e.g. a silicon wafer). Transfer of the pattern is typically via imaging onto a layer of radiation-sensitive material (resist) provided on the substrate. In general, a single substrate will contain a network of adjacent target portions that are successively patterned. Known lithographic apparatus include steppers, ...

Claims

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Application Information

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IPC IPC(8): G03B27/54H05G2/00
CPCB82Y10/00H05H1/24H05G2/003G03F7/70033H01L21/0274
Inventor IVANOV, VLADIMIR VITALEVICHBANINE, VADIM YEVGENYEVICHKOSHELEV, KONSTANTIN NIKOLAEVICHKRIVTSUN, VLADIMIR MIHAILOVITCH
Owner ASML NETHERLANDS BV
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