Multi-state spin-torque transfer magnetic random access memory

a random access memory and spin-torque transfer technology, applied in the field of nonvolatile magnetic memory, can solve the problems of low density of mlcs, higher cost, and inability to scale to lower feature sizes, and achieve the effect of reducing switching current and high thermal stability of magnetic memory

Inactive Publication Date: 2009-09-03
AVALANCHE TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0011]To overcome the limitations in the prior art described above, and to overcome other limitations that will become apparent upon reading and understanding the present specification, the present invention discloses a ...

Problems solved by technology

Such MLCs suffer from low density and therefore higher costs.
One of the key challenges for such type of designs using in-plane magnetization is that they cannot be scaled to lower feature sizes such as below 65 nm.
This is primar...

Method used

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  • Multi-state spin-torque transfer magnetic random access memory
  • Multi-state spin-torque transfer magnetic random access memory
  • Multi-state spin-torque transfer magnetic random access memory

Examples

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Embodiment Construction

[0044]In the following description of the embodiments, reference is made to the accompanying drawings that form a part hereof, and in which is shown by way of illustration of the specific embodiments in which the invention may be practiced. It is to be understood that other embodiments may be utilized because structural changes may be made without departing from the scope of the present invention.

[0045]In an embodiment of the present invention, a multi-state magnetic memory cell is disclosed. In one embodiment of the present invention, a stack of magnetic tunnel junction (MTJ) is formed, each MTJ being formed of at least three layers, a barrier layer formed between a fixed layer and a free layer, each MTJ being separated from another by a conductive layer, the stack forming a multi-state magnetic memory cell for storing at least two bits of digital information.

[0046]Referring now to FIG. 1, relevant layers of a multi-state current-switching (or spin-torque) magnetic memory element 1...

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Abstract

A multi-state spin-torque transfer magnetic random access memory (STTMRAM) is formed on a film and includes a first magnetic tunneling junctions (MTJ) having a first fixed layer, a first sub-magnetic tunnel junction (sub-MTJ) layer and a first free layer. The first fixed layer and first free layer each have a first magnetic anisotropy. The STTMRAM further includes a non-magnetic spacing layer formed on top of the first MTJ layer and a second MTJ formed on top of the non-magnetic spacing layer. The second MTJ has a second fixed layer, a second sub-MTJ layer and a second free layer. The second fixed and second free layers each have a second magnetic anisotropy, wherein at least one of the first or second magnetic anisotropy is perpendicular to the plane of the film.

Description

CROSS REFERENCE TO RELATED APPLICATIONS[0001]This application is a continuation-in-part of U.S. patent application Ser. No. 11 / 678,515 filed on Feb. 23, 2007, by Rajiv Yadav Ranjan and entitled “A High Capacity Low Cost Multi-State Magnetic memory” and U.S. patent application Ser. No. 11 / 866,830, filed on Oct. 3, 2007, by Rajiv Yadav Rajiv and entitled “An Improved High Capacity Low Cost Multi-State Magnetic Memory” and U.S. application Ser. No. 11 / 860,467, filed on Sep. 24, 2007, by Rajiv Yadav Ranjan and entitled “Low Cost Multi-State Magnetic Memory” and a continuation-in-part of U.S. patent application Ser. No. 11 / 674,124 entitled “Non-Uniform Switching Based Non-Volatile Magnetic Base Memory”, filed on Feb. 12, 2007, the disclosure of which is incorporated herein by reference, as though set forth in full.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates generally to non-volatile magnetic memory and particularly to multi-state magnetic...

Claims

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Application Information

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IPC IPC(8): H01L29/82
CPCG11C11/16G11C11/5607G11C2211/5615H01L27/228Y10S977/935G11C11/1675H01L43/02Y10S977/933H01L43/08G11C11/161H10B61/22H10N50/10H10N50/80
Inventor RANJAN, RAJIV YADAVKESHTBOD, PARVIZ
Owner AVALANCHE TECH
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