Light-emitting gallium nitride-based III-V group compound semiconductor device and manufacturing method thereof

Abstract

A light-emitting gallium nitride-based III-V group compound semiconductor device and a manufacturing method thereof are disclosed. The light emitting device includes a substrate, a n-type semiconductor layer over the substrate, an active layer over the n-type semiconductor layer, a p-type semiconductor layer over the active layer, a conductive layer over the p-type semiconductor layer, a first electrode disposed on the conductive layer and a second electrode arranged on exposed part of the n-type semiconductor layer. A resistant reflective layer or a contact window is disposed on the p-type semiconductor layer, corresponding to the first electrode so that current passes beside the resistant reflective layer or by the contact window to the active layer for generating light. When the light is transmitted to the conductive layer for being emitted, it is not absorbed or shielded by the first electrode. Thus the current is distributed efficiently over the conductive layer. Therefore, both LED brightness and efficiency are improved. Moreover, adhesion between the conductive layer and the p-type semiconductor layer is improved so that metal peel-off problem during manufacturing processes can be improved.

Description

RELATED APPLICATIONS[0001]This application is a Divisional patent application of co-pending application Ser. No. 11 / 979,963, filed on 13 Nov. 2007. The entire disclosure of the prior application, Ser. No. 11 / 979,963, from which an oath or declaration is supplied, is considered a part of the disclosure of the accompanying Divisional application and is hereby incorporated by reference.BACKGROUND OF THE INVENTION[0002]The present invention relates to a light-emitting gallium nitride-based III-V group compound semiconductor device and a manufacturing method thereof, especially to a light-emitting gallium nitride-based III-V group compound semiconductor device with high resistance as well as reflection and a manufacturing method thereof.[0003]Now scientists in various countries are dedicated to developing new LED material and improving the internal quantum efficiency of LED. However, the external quantum efficiency of LED is not improved so that there is a great difference between the ex...

AI Technical Summary

Benefits of technology

[0005]Therefore it is a primary object of the present invention to provide a light-emitting gallium nitride-based III-V group compound semiconductor device and a manufacturing method thereof. The LED is added with a resistant and reflective layer or is etched to form a contact window so as to make current flows beside thereof to the active layer for generating light. Thus when the light sent to the conductive layer is emitted, the light is not absorbed or shielded by the first electrode. The current is effectively spread across the conductive layer. Therefore, the brightness and light emitting efficiency of the LED are increased.

[0006]It is another object of the present invention to provide a light-emitting gallium nitride-based III-V group compound semiconductor device and a manufacturing method thereof that form a resistant and reflective layer on the LED or have a contact window on the p-type semiconductor layer by etching, corresponding to the first electrode. Thus adhesion between the conductive layer and the p-type semiconductor layer is increased so that metal peel-off problem during manufacturing processes is improved.

Problems solved by technology

However, the external quantum efficiency of LED is not improved so that there is a great difference between the external quantum efficiency and the internal quantum efficiency of LED.

Because the p-type semiconductor layer has higher resistance so that transverse current spreading in the p-type semiconductor layer is not easy.

Therefore, the external quantum efficiency of the LED is dramatically reduced.

Such prior art can't meet requirements of users so that there is a need to provide a LED with high resistance and reflection for improving light emitting efficiency of LEDs.

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