Active double or multi gate micro-electro-mechanical device with built-in transistor

a micro-electro-mechanical device and transistor technology, applied in the field of vibrating micro electro mechanical systems, can solve the problems of difficult scaling of capacitive transduced passive mem resonators, and achieve the effect of strong reduction of signal transmission parameters and scaling

Inactive Publication Date: 2010-07-08
ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)
View PDF11 Cites 28 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Especially the dependence on the electrode surface makes scaling of capacitive transduced passive MEM resonators difficult without strongly decreasing the signal transmission parameters.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Active double or multi gate micro-electro-mechanical device with built-in transistor
  • Active double or multi gate micro-electro-mechanical device with built-in transistor
  • Active double or multi gate micro-electro-mechanical device with built-in transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

1. Active MEM Resonator Device Structure

[0037]A simplified three dimensional drawing is shown in FIG. 1. The gate G1, G2 structures 1 and 1′ are laterally placed and fixed with respect to the substrate.

[0038]A source region 2, a drain region 3 and a low doped body region 4 connecting the source and drain form the active MEM resonator. The channels 5, 5′ are formed at the lateral interfaces of the body regions 2, 3 and 4. The active MEM resonator is connected by elastic means 6 to the substrate. Along the channel-to-air gap interface, a possible gate stack 7 can be placed. If the drain and source have the same type of doping (e.g. n+ or p+), the structure operates a vibrating FET (enhancement or accumulation transistor: n+−p−n+, p+−n−p+, n+−n−n+, p+−p. p+).

[0039]If the drain and the source have opposite dopings and the central part is low doped the structure transforms in a p-i-n junction and can be operated as vibrating tunnel FET (gate overlapped on the central body) or as a vibrat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The present invention exploits the combination of the amplification, provided by the integration of a FET (or any other active device with two or more terminals), with the signal modulation, provided by the MEM resonator, to build a MEM resonator with built-in transistor (hereafter called active MEM resonator). In these devices, a mechanical displacement is converted into a current modulation and depending on the active MEM resonator geometry, number of gates and bias conditions it is possible to selectively amplify an applied signal. This invention integrates proposes to integrate transistor and micro-electro-mechanical resonator operation in a device with a single body and multiple surrounding gates for improved performance, control and functionality. Moreover, under certain conditions, an active resonator can serve as DC-AC converter and provide at the output an AC signal corresponding to its mechanical resonance frequency.

Description

FIELD OF THE INVENTION[0001]The present invention concerns the field of vibrating micro electro mechanical systems (MEMS) and transistors, in particular the combination of both to improve the performances of MEM resonators.PRIOR ART AND PRINCIPLE OF THE INVENTION[0002]The present invention exploits the combination of the amplification, provided by the integration of a FET (or similar active device), with the signal modulation, provided by the MEM resonator, to build a MEM resonator with intrinsic signal gain (hereafter called active MEM resonator). Depending on the active MEM resonator dimensions and under certain bias conditions it is possible to selectively amplify an applied signal.[0003]The principle of such device operating in a Double Gate configuration has been fully validated for the first time by the inventors of the present application in a 2008 publication [1], which is incorporated by reference in its entirety in the present application and is in total contrast with the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(United States)
IPC IPC(8): H03H11/04
CPCH03H3/0073H03H9/2426H03H9/465H03H2009/02314
Inventor IONESCU, MIHAI ADRIANGROGG, DANIEL
Owner ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap