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Polishing method

a technology of polishing tape and surface, applied in the direction of edge grinding machines, manufacturing tools, lapping machines, etc., can solve the problems difficult to bring the polishing tape into contact with the polishing start position, and difficult to achieve good polishing profile, prevent the occurrence of insufficient polishing or uneven polishing

Inactive Publication Date: 2011-10-20
EBARA CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a polishing method for manufacturing a bonded wafer, such as an SOI substrate, that can prevent insufficient polishing or uneven polishing at the boundary of the polished surface with the non-polished surface. The method involves positioning a polishing head at a position above the polishing start position in the edge portion of the substrate, lowering the polishing head and bringing the polishing tool into contact with the polishing start position at a predetermined pressure. The polishing tool is then allowed to stay at the polishing start position for a predetermined amount of time before moving the polishing head towards the peripheral end of the substrate. This polishing method can achieve a good polishing profile without causing peeling of the surface film from the substrate.

Problems solved by technology

With reference to the conventional polishing apparatus which includes a polishing head and in which a polishing tape is lowered and brought into contact with a polishing start position in an edge portion of a rotating substrate and, when the contact pressure of the polishing tape on the edge portion of the substrate is found to have reached a set pressure, the polishing tape is allowed to move toward the peripheral end of the substrate at a predetermined movement speed while keeping the polishing tape in contact with the edge portion of the rotating substrate, it is generally difficult to bring the polishing tape into contact with the polishing start position in the edge portion of the substrate at a set pressure upon the start of polishing and, in addition, the polishing tape stays in the polishing start position generally for only a short time.
The conventional polishing apparatus, therefore, has the problem that a polished surface of a substrate, at the boundary with the non-polished surface, is likely to suffer from insufficient polishing or uneven polishing.

Method used

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Examples

Experimental program
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example 1

[0076]Polishing of an edge portion of a substrate was carried out using the polishing apparatus shown in FIG. 2. A tape having #4000 diamond abrasive particles fixed thereon was used as a polishing tape, and a resin pad whose lower end, which is to make contact with the polishing tape, has a radius of curvature of 0.5 mm was used as the pressing pad of the polishing head. While allowing the polishing tape to travel at a speed of 10 mm / min, the polishing tape was pressed against a polishing start position in the edge portion of the substrate, rotating at 500 rpm, at a load of 10 N by the pressing pad of the polishing head whose position was fixed, thereby polishing the edge portion at the polishing start position for 20 seconds. Thereafter, polishing was continued by pressing the polishing tape against the edge portion of the substrate, rotating at 500 rpm, at a load of 10 N while moving the polishing head toward the peripheral end of the substrate at a movement speed of 5 μm / min. Th...

example 2

[0078]Polishing of an edge portion of the same substrate was carried out in the same manner as in Example 1 except that the edge portion at the polishing start position was polished for 40 seconds. The results of the polishing, i.e., the relationship between polishing amount and radial position (measurement position) on the substrate, are shown in FIG. 8.

comp.example 1

Comp. Example 1

[0079]Polishing of an edge portion of the same substrate was carried out in the same manner as in Example 1 except that polishing of the edge portion of the substrate was started by pressing the polishing tape against the polishing start position in the edge portion of the substrate, rotating at 500 rpm, at a load of 10 N by the pressing pad of the polishing head and, immediately after the start of polishing, the polishing head was moved toward the peripheral end of the substrate at a movement speed of 5 μm / min. The results of the polishing, i.e., the relationship between polishing amount and radial position (measurement position) on the substrate, are shown in FIG. 9.

[0080]As can be seen in FIGS. 7 through 9, the inclination at the boundary between the polished surface and the non-polished surface is steeper in Examples 1 and 2 than in Comp. Example 1. Further, the inclination is steeper in Example 2 than in Example 1.

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Abstract

A polishing method can obtain a good polishing profile which, for example, will not cause peeling of a semiconductor layer from a silicon substrate. The polishing method includes: positioning a polishing head at a position above a polishing start position in an edge portion of a rotating substrate; lowering a polishing tool of the polishing head until the polishing tool comes into contact with the polishing start position in the edge portion of the rotating substrate and a pressure between the polishing tool and the polishing start position reaches a set pressure; allowing the polishing tool to stay at the polishing start position for a predetermined amount of time; and then moving the polishing head toward a peripheral end of the substrate while keeping the polishing tool in contact with the edge portion of the rotating substrate at the set pressure.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a polishing method for polishing a peripheral portion (edge portion and bevel portion) of a substrate, such as a semiconductor wafer, and more particularly to a polishing method for polishing or grinding a peripheral portion of a semiconductor wafer in the process of manufacturing a semiconductor device in a surface of the semiconductor wafer.[0003]2. Description of the Related Art[0004]A polishing apparatus, which uses a polishing tape having abrasive particles fixed on a surface, is known as a polishing apparatus for polishing a peripheral portion (edge portion and bevel portion) of a substrate, such as a semiconductor wafer (see Japanese Patent No. 4125148). In polishing of a peripheral portion (edge portion and bevel portion) of a semiconductor wafer by the use of a polishing tape, it is common practice to press a surface of the polishing tape against the peripheral portion of the se...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): B24B1/00
CPCB24B9/065B24B37/042B24B21/04B24B21/002
Inventor NAKANISHI, MASAYUKIITO, KENYASEKI, MASAYAIWADE, KENJIKUBOTA, TAKEO
Owner EBARA CORP