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Power detector

a technology of power detector and power detector, which is applied in the direction of power conversion systems, amplifiers with semiconductor devices/discharge tubes, amplifiers, etc., can solve the problems of large temperature change, large process, and complex structure of received signal strength indication (rssi) to be applied to the power detector, so as to reduce the current flowing through the main current path.

Active Publication Date: 2012-11-22
INTELLECTUAL DISCOVERY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention relates to a power detector that includes a differential input unit and a differential output unit. The differential input unit includes a differential input terminal and a DC voltage generator. The differential output unit includes a differential output terminal that full wave rectifies the AC signal and outputs a differential signal. The negative output terminal is connected to a positive output terminal of the differential output unit. The negative output signal generator is connected to the positive output terminal and generates a compensation signal for linearity when the voltage of the positive output terminal is less than a critical voltage. The negative output signal generator includes a current source, a first MOS transistor, a second MOS transistor, a third MOS transistor, a fourth MOS transistor, a fifth MOS transistor, a sixth MOS transistor, a fourth resistor, a fifth resistor, a fourth capacitor, a fourth amplifier, a second amplifier, a second resistor, and a third resistor. The negative output signal generator compensates for the non-linearity of the positive output voltage by generating a voltage that is the difference between the actual and ideal voltage of the positive output terminal. The negative output signal generator ensures accurate detection of power and provides a more linear response to changes in voltage.

Problems solved by technology

It requires a sufficiently wide bandwidth enough to support signal detection in an RF band, and therefore, a complex structure such as a received signal strength indication (RSSI) is difficult to be applied to the power detector.
Even if possible, power consumption is increased.
Accordingly, the prior art power detector has a large process and large temperature change and is difficult to be applied to application products requiring accurate power detection.

Method used

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first embodiment

[0034]The differential input unit 110 according to the present invention includes a positive input terminal VIN+, a negative input terminal VIN−, a first and a second capacitors C1 and C2, and a DC voltage generator 111. The positive input terminal VIN+ is connected to a first node N1. The first capacitor C1 is located between the positive input terminal VIN+ and the first node N1. The negative input terminal VIN− is connected to a second node N2. The second capacitor C2 is located between the negative input terminal VIN+ and the second node N2.

[0035]The DC voltage generator 111 generates a DC voltage to a negative output terminal VOUT−, to be described below, of the differential output unit 120. The DC voltage generator 111 includes a current source IB, a first MOS transistor M1, a third capacitor C3 and a first amplifier A1. The current source IB supplies bias current to the first MOS transistor M1. The source of the first MOS transistor M1 is connected to a third node N3. The gat...

second embodiment

[0054]As such, when the amplitude of the input signal VP,diff is small, the linearity of the power detector 100 may not be maintained. A power detector according to the present invention which overcomes such a problem will be described below.

[0055]FIG. 6 is a circuit diagram showing a configuration of a power detector 200 according to a second embodiment of the present invention. Referring to FIG. 6, the power detector 200 according to the second embodiment of the present invention also includes a differential input unit 210 and a differential output unit 220.

[0056]The differential input unit 210 according to the second embodiment of the present invention includes a positive input terminal VIN+, a negative input terminal VIN−, a first to a third capacitors C1, C2 and C3, a current source IB, a first MOS transistor M1 and a first amplifier A1.

[0057]The overall configuration of the differential input unit 210 according to the second embodiment of the present invention is the same as t...

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Abstract

A power detector having a differential input unit and a differential output unit. In one aspect, the invention may be a power detector including a differential input unit including a differential input terminal to which an AC signal is input and a DC voltage generator which generates and outputs a DC voltage; and a differential output unit including a differential output terminal which full wave rectifies the AC signal input from the differential input unit and outputs a differential signal, wherein a negative output terminal of the differential output terminal is connected to the output terminal of the DC voltage generator.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application claims priority under 35 U.S.C. §119 to Korean Patent Application No. 10-2011-0046615, filed on May 18, 2011, the entirety of which is hereby incorporated herein by reference.FIELD OF THE INVENTION[0002]The present invention relates to a power detector, and more particularly to a power detector comprising a differential input unit and a differential output unit.BACKGROUND OF THE INVENTION[0003]In CMOS process, a MOSFET is generally used as one of the components of an RF power detector. It requires a sufficiently wide bandwidth enough to support signal detection in an RF band, and therefore, a complex structure such as a received signal strength indication (RSSI) is difficult to be applied to the power detector. Even if possible, power consumption is increased.[0004]FIGS. 1a and 1b are views for describing the attribute of a MOSFET used in a prior art power detector. More specifically, FIG. 1a shows a prior art NMOS RF pow...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H02M7/217
CPCH03F3/45179H03G3/3052H03F2203/45318H03F2203/45306H03F2203/45101G01R21/06H03F3/21H03G3/30
Inventor KIM, EUN-HEEKO, JIN-HO
Owner INTELLECTUAL DISCOVERY CO LTD