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Controlling the emissive properties of materials-improved lasers and upconversion materials

a technology of emissive properties and lasers, applied in the direction of crystal growth process, polycrystalline material growth, condensed vapor, etc., can solve the problems of limiting the application range and performance of materials produced through these processes, limiting the local control of methods, and affecting the fundamental understanding of the underlying microscopic mechanism

Active Publication Date: 2013-08-29
UCHICAGO ARGONNE LLC
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0005]In the present invention, control, down to the atomic level, of the three dimensional dopant distributions in a given bulk material by using Atomic layer deposition (ALD) is described. The main advantage of this technique is that it relies on the self-assembly of the dopant induced by the hindrance effect, does not require expensive nano-patterning in order to separate ions, and can be scaled to arbitrary large surfaces and to a variety of industries. Furthermore, the use of dual-pulsing of organometalic precursors allows further separation.

Problems solved by technology

These methods rely on a statistical distribution of dopant and, therefore, often present inhomogeneous local concentrations, chemical environments, and properties that in turn hinder the fundamental understanding of the underlying microscopic mechanism and limit the applications range and performances of materials produced through these processes.
These methods provide no local control.

Method used

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Embodiment Construction

[0019]The present invention introduced the application of atomic patterning to optical fibers and other crystalline materials. Through the present invention, one can organize doping and develop crystalline materials with localized doping concentrations. The present invention also allows for use of arbitrarily large Atomic Layer Deposition (ALD) precursors molecules, which is an unexpected result

[0020]In some embodiment, the present invention provides a method for producing a crystalline material of desired composition and thickness through atomic layer deposition. In some embodiments, said method may comprise: introducing a first precursor into a growth chamber; purging the growth chamber these two steps constitute a cycle, the first cycle is refereed as the A cycle, introducing a reducing or oxidizing agent into the growth chamber; purging the growth chamber (refereed as cycle B); This A and B cycles constitute the matrix material into which the dopant will be introduced. The dopan...

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Abstract

Systems and methods for producing crystalline materials by atomic layer deposition, allowing for high control of localized doping. Such materials may be fibers or films suitable for use in optoelectronics and lasers.

Description

RELATED APPLICATIONS[0001]This application is related to U.S. patent application Ser. No. 13 / 370,602, the entirety of which is incorporated herein by reference.[0002]The United States Government claims certain rights in this invention pursuant to Contract No. DE-AC02-06CH11357 between the United States Government and UChicago Argonne, LLC representing Argonne National Laboratory. The United States Government also claims certain rights in this invention pursuant to research sponsored by the Army Research Lab, ANL Cost Code 8R26900.FIELD OF THE INVENTION[0003]The present invention is directed to a method and system for production of crystalline materials through the use Atomic Layer Deposition (ALD). More particularly, the method and system concern production of crystalline materials with locally controlled doping and high doping levels through ALD. In particular, bulk-like lifetime values (˜6 ms) obtained with Er doped Yttria fiber made by ALD.BACKGROUND OF THE INVENTION[0004]The int...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01S3/09C09K11/78B05D5/12C23C16/40B05D5/06
CPCC30B25/00C23C16/405C23C16/45531C23C16/45553C30B29/16H01S3/163C04B35/62218C04B35/62231C04B2235/3224H01S3/067H01S3/1608C04B35/505
Inventor PROSLIER, THOMASBECKER, NICHOLAS G.PELLIN, MICHAEL J.KLUG, JEFFREYELAM, JEFFREY W.
Owner UCHICAGO ARGONNE LLC