Method of forming pattern in substrate

Abstract

A method of forming a pattern in a substrate is provided, in which the substrate having a pattern region is provided first. A plurality of stripe-shaped mask layers is formed on the substrate in the pattern region. Each of at least two adjacent stripe-shaped mask layers among the stripe-shaped mask layers has a protrusion portion and the protrusion portions face to each other. A spacer is formed on sidewalls of the stripe-shaped mask layers, wherein a thickness of the spacer is greater than a half of a distance between two of the protrusion portions. Subsequently, the stripe-shaped mask layers are removed. An etching process is performed by using the spacer as a mask to form trenches in the substrate. Thereafter, the trenches are filled with a material.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The invention relates to a semiconductor manufacturing process. More particularly, the invention relates to a method for forming a pattern in a substrate.[0003]2. Description of Related Art[0004]In general, a method for forming a pattern in a substrate includes forming a patterned mask layer on the substrate first. Thereafter, by using the patterned mask layer as a mask, an etching process is performed to form trenches in the substrate. Then, a material of the predetermined pattern is filled in the trenches.[0005]With the tendency of device miniaturization and device integration, the sizes of the line width and the space of the devices are reduced. It is difficult to form the pattern having required line width and space by using the above method. Accordingly, a double patterning method is developed.[0006]FIGS. 1A-1E are cross-sectional views showing a double patterning method in the related art. First, referring to FIG....

AI Technical Summary

Benefits of technology

This method efficiently forms patterns with required cut features without additional masks, reducing fabrication complexity and costs while maintaining precise control over line widths and spaces, facilitating the creation of conductive patterns with reduced etching rates and simplified processes.

Problems solved by technology

It is difficult to form the pattern having required line width and space by using the above method.

However, the fabrication of the mask layer 22 requires the use of an additional mask, which increases the fabrication cost.

In addition, for achieving a smaller and smaller line width, the fabrication of the mask layer is quite difficult.

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