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Light Emitting Diode

a technology of light-emitting diodes and diodes, which is applied in the direction of basic electric elements, electrical apparatus, and semiconductor devices

Inactive Publication Date: 2015-06-25
NATIONAL CHUNG HSING UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The proposed structure enhances the output power and alleviates the current spreading issues by facilitating efficient charge passage and ohmic contact, improving the overall performance of UV LEDs.

Problems solved by technology

Both the blue LED and the UV LED have the same drawbacks, such as heat dissipation problem, current spreading problem, or epitaxial mismatching problem.
Because the wavelength of the UV LED is smaller than that of the blue LED, the current spreading problem of the UV LED is much worse than that of the blue LED.

Method used

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Examples

Experimental program
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Embodiment Construction

[0015]FIG. 2 illustrates the first embodiment of a light emitting diode (LED) according to the present invention. In this embodiment, the LED is a horizontal type LED, and includes an epitaxial substrate 21, an active layer 22, a tunneling layer 23, a current spreading layer 24, and an electrode unit 25.

[0016]The active layer 22 includes a first conductive type film 221 that is disposed on the epitaxial substrate 21, a quantum well structure 222 that is formed on the first conductive type film 221, and a second conductive type film 223 that is formed on the quantum well structure 222. The active layer 22 is able to generate light which has a wavelength smaller than 400 nm when applied with an external electric energy. The second conductive type film 223 is made from AlyInzGa(1-y-z)N, wherein 0<y<1, 0≦z<1, and 0<(y+z)≦1.

[0017]The tunneling layer 23 is stacked on and contacts the second conductive type film 223, and is made from AlxIn1-xN , wherein 0y. The tunneling layer 23 has a lay...

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Abstract

A light emitting diode includes an epitaxial substrate, an active layer, a tunneling layer, a current spreading layer, and an electrode unit. The active layer includes a first conductive type film, a quantum well structure, and a second conductive type film that is made from AlyInzGa(1-y-z)N, wherein 0<y<1, 0≦̸z<1, and 0<(y+z)≦̸1. The tunneling layer is stacked on the second conductive type film and is made from AlxIn1-xN, wherein 0<x<1 and x>y. The tunneling layer has a band gap greater than that of the second conductive film. The current spreading layer is stacked on the tunneling layer.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims priority of Taiwanese Patent Application No. 102147752, filed on Dec. 23, 2013.FIELD OF THE INVENTION[0002]This invention relates to a light emitting diode, more particularly to a light emitting diode including an electron tunneling layer.BACKGROUND OF THE INVENTION[0003]FIG. 1 illustrates a conventional UV light emitting diode (UV LED) that includes an epitaxial substrate 11, an active layer 12 which is disposed on the epitaxial substrate 11, a transparent conducting layer 14 which is disposed on the active layer 12, and an electrode unit 15 which transmits an external energy to the active layer 12. When the external energy is transmitted into the active layer 12, the active layer 12 generates UV light. The epitaxial substrate 11 is made from sapphire.[0004]The active layer 12 includes a quantum well structure having alternately disposed AlGaN layers and GaN layers. The transparent conducting layer 14 is made from ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L33/36H01L33/32H01L33/40H01L33/06
CPCH01L33/36H01L33/40H01L33/32H01L33/06H01L33/14H01L33/04H01L33/42
Inventor WUU, DONG-SINGHORNG, RAY-HUATSAI, TSUNG-YEN
Owner NATIONAL CHUNG HSING UNIVERSITY