Substrate treating apparatus

Abstract

An upper end of a tubular member surrounding a common pipe line is closed by a lid member. The lid member has an opening formed therein for supplying liquids to adjacent the rotation center on the back surface of a wafer. Deionized water supplied at normal temperature to the interior of the tubular member, after serving to cool the common pipe line, flows out of a lower end of the tubular member.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]This invention relates to a substrate treating apparatus for treating substrates by supplying treating solutions to front surfaces and back surfaces of the substrates. The substrates may, for example, be glass substrates for organic EL displays, glass substrates for liquid crystal displays, panel substrates for solar cells, glass substrates for plasma displays, glass substrates for photomasks, substrates for optical disks, or semiconductor wafers, for example.[0003]2. Description of the Related Art[0004]A substrate treating apparatus which carries out etching treatment with hydrofluoric acid (HF) for surfaces of a semiconductor wafer as a substrate, for example, supplies hydrofluoric acid to front and back surfaces of the semiconductor wafer for the purpose of etching both the front and back surfaces of the semiconductor wafer, or for the purpose of bringing the temperature of the semiconductor wafer close to the temper...

AI Technical Summary

Benefits of technology

This patent describes a substrate treating apparatus that can cool the solution supplied to the back surface of a substrate to prevent temperature increases. It also prevents temperature increases in the valves by supplying and sucking deionized water. This leads to a uniform treatment of the substrate.

Problems solved by technology

However, such degree of freedom is hardly available for the back surface of the semiconductor wafer.

This makes it impossible to carry out uniform etching treatment between a plurality of semiconductor wafers.

Such a temperature difference gives rise to a problem of marring the uniformity of etching over the surface of the semiconductor wafer.

However, when such construction is employed, it will become difficult to collect and reuse hydrofluoric acid, and there will occur a problem that treatment time will become all the longer for execution of the rinsing step.

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