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Self repair device and method thereof

a self-repair and self-repair technology, applied in the field of integrated circuits, can solve the problems of increasing the probability of defects in the semiconductor memory device, reducing the design rule, and reducing the yield ramp-up time, so as to improve the package yield and reduce the effect of yield ramp-up tim

Active Publication Date: 2016-12-22
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The patent is about a device and method that can fix defects in a package by using a row or column self-repair mode. This improves repair efficiency and helps increase the yield of the package. The device can also optimize the repair operation based on different types of defects, which saves time and money.

Problems solved by technology

The decrease in the design rule may increase the probability of defects in the semiconductor memory devices, and one or more defects in a chip may cause the chip to be discarded.
Thus, when a column-based defect occurs, the yield may decrease because the column-based defect cannot be repaired.
During a package-level test, a bit failure, a row failure, or a column failure may occur.
A semiconductor package having such failure requires a repair circuit, which leads to an increase in the size of each semiconductor chip.
Thus, the repair circuit may cause a decrease in the net die per wafer.
Thus, a bit failure and a row failure can be repaired, but a column failure cannot be repaired.

Method used

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  • Self repair device and method thereof
  • Self repair device and method thereof
  • Self repair device and method thereof

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Embodiment Construction

[0027]Hereinafter, a self repair device and method will be described below with reference to the accompanying drawings through various examples of embodiments.

[0028]FIG. 1 is a configuration diagram of a self repair device in accordance with an embodiment. In an embodiment, a semiconductor memory device may include the self repair device.

[0029]The self repair device in accordance with an embodiment may include an Array Rupture Electrical fuse (hereinafter referred to as “ARE”) array 100, an ARE controller 200, and a row / column redundancy unit 300.

[0030]The ARE array 100 may store information on the address that a failure has occurred. Such information collected during a memory test may be temporarily stored in a storage device of memory tester, and then applied the semiconductor memory device to rupture electrical fuses corresponding to the respective address in order to permanently store the information at the semiconductor memory device.

[0031]The ARE array 100 may receive a fuse s...

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Abstract

A self repair device may include: an electrical fuse array configured to store bit information of a failed address in a fuse; an electrical fuse controller configured to store a row address or column address corresponding to a failed bit when a failure occurs, generate a repair address by comparing a failed address inputted during a test to the address stored therein, output a rupture enable signal for controlling a rupture operation of the electrical fuse array, and output row fuse set data or column fuse set data in response to the failed address; and a row / column redundancy unit configured to perform a row redundancy or column redundancy operation in response to the row fuse set data or the column fuse set data applied from the electrical fuse array.

Description

CROSS-REFERENCES TO RELATED APPLICATION[0001]The present application claims priority under 35 U.S.C. §119(a) to Korean application number 10-2015-0085296 filed on Jun. 16, 2015, in the Korean Intellectual Property Office, which is incorporated herein by reference in its entirety.BACKGROUND[0002]1. Technical Field[0003]Various embodiments generally relate to an integrated circuit, and more particularly to a self repair device and method for improving repair efficiency during a package repair operation.[0004]2. Related Art[0005]A semiconductor memory such as Dynamic Random Access Memory (hereinafter referred to as “DRAM”) includes a plurality of memory cells arranged in a matrix. Demands for highly integrated semiconductor memory devices are leading to a decrease in the design rule, which defines the minimum feature size of chip lithography. The decrease in the design rule may increase the probability of defects in the semiconductor memory devices, and one or more defects in a chip ma...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): G11C29/00G11C17/18G11C17/16
CPCG11C29/78G11C29/76G11C17/18G11C17/16G11C29/4401G11C29/787G11C2029/4402
Inventor SHIM, YOUNG BO
Owner SK HYNIX INC
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