Semiconductor structure with multilayer iii-v heterostructures
a heterostructure, multi-layer technology, applied in the direction of basic electric elements, semiconductor devices, electrical equipment, etc., can solve the problems of increasing off-state leakage, causing damage to off-state leakage, undesirable hot carrier effects, etc., and achieving contact resistance requirements for scaled devices has proved extremely challenging and expensiv
Active Publication Date: 2017-02-16
GLOBALFOUNDRIES US INC
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Benefits of technology
The invention provides a method and a transistor structure that includes a compositionally graded layer of two compound semiconductor materials which have different bandgaps. This results in a more efficient and effective semiconductor device. The method includes forming a bottom barrier layer, a seed layer, and a top layer of compound semiconductor materials, with a compositionally graded layer between them. The transistor structure also includes a compositionally graded layer between the seed layer and the top layer. This results in improved performance and efficiency of the semiconductor device.
Problems solved by technology
Although the use of low effective mass semiconductor materials, (including III-V materials such as In(x)Ga(1−x)As, or silicon germanium alloys) for the channel may reduce channel resistance by introducing low carrier effective mass, these materials are prone to damaging off-state leakage and undesirable hot carrier effects such as impact ionization.
In addition, achieving contact resistance requirements for scaled devices has proved to be extremely challenging, but an increasingly important contributor to the performance of the final device.
Moving to materials with the smallest effective masses (e.g., InAs, Ge) improves both contact resistance and enhances mobility, but this comes at the expense of increased off-state leakage.
Method used
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[0015]Aspects of the present invention and certain features, advantages, and details thereof, are explained more fully below with reference to the non-limiting examples illustrated in the accompanying drawings. Descriptions of well-known materials, fabrication tools, processing techniques, etc., are omitted so as not to unnecessarily obscure the invention in detail. It should be understood, however, that the detailed description and the specific examples, while indicating aspects of the invention, are given by way of illustration only, and are not by way of limitation. Various substitutions, modifications, additions, and / or arrangements, within the spirit and / or scope of the underlying inventive concepts will be apparent to those skilled in the art from this disclosure.
[0016]Approximating language, as used herein throughout the specification and claims, may be applied to modify any quantitative representation that could permissibly vary without resulting in a change in the basic fun...
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The source / drain of a fully III-V semiconductor or Si-based transistor includes a bottom barrier layer that may be lattice matched to the channel, a lower layer of a wide bandgap III-V material and a top layer of a comparatively narrow bandgap III-V material, with a compositionally graded layer between the lower layer and top layer gradually transitioning from the wide bandgap material to the narrow bandgap material.
Description
BACKGROUND OF THE INVENTION[0001]Technical Field[0002]The present invention generally relates to the use of semiconductor materials in devices from Groups III and V of the Periodic Table of Elements. More particularly, the present invention relates to the use of a III-V material heterostructure in the source / drain regions using a wide bandgap III-V layer combined or graded upwardly to another III-V material with a comparatively small bandgap.[0003]Background Information[0004]The effective current through the channel of a transistor faces several bottlenecks as semiconductor devices continue shrinking. One of the most critical bottlenecks is extrinsic resistance, whereby the access regions of the device outside the channel dramatically reduce drive current. To maximize drive current, transistors require both low resistance source / drain regions and low contact resistance. Although the use of low effective mass semiconductor materials, (including III-V materials such as In(x)Ga(1−x)As,...
Claims
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IPC IPC(8): H01L29/10H01L29/66H01L29/165H01L29/78H01L29/205
CPCH01L29/1054H01L29/785H01L29/66462H01L29/165H01L29/205H01L29/0847H01L29/66522H01L29/66795H01L29/7848
InventorBENTLEY, STEVENGALATAGE, ROHIT
OwnerGLOBALFOUNDRIES US INC