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Gas barrier film and method of manufacturing the same

a technology of atomic layer deposition film and gas barrier, which is applied in the field of gas barrier film, can solve the problems of reducing device performance, bending, and material deterioration, and achieves the effects of reducing the incidence of defects, and reducing external mechanical stresses

Inactive Publication Date: 2017-12-07
TOPPAN PRINTING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a method for protecting an atomic layer deposition film formed on a plastic substrate by creating an overcoat layer using heat-curable or active energy beam-curable resin. This overcoat layer acts as a barrier to external mechanical stresses, reducing defects in the atomic layer deposition film and maintaining the gas barrier properties of the gas barrier film. The overcoat layer is formed through a transfer process using a curable resin layer, which acts as a cushion to protect the atomic layer deposition film from mechanical stresses. This results in a reduced impact on the gas barrier properties, improving the overall quality of the gas barrier film.

Problems solved by technology

The structure and material may deteriorate due to exposure to traces or extremely small traces of moisture or oxygen, which reduces the device's performance.
However, there is a demand for a flexible (thin, lightweight, unbreakable, and bendable) substrate formed of a plastic film, for the following reasons: the difficulty in handling a glass material, thickness and weight, and possible application to mobile devices whose markets are rapidly expanding.
However, a substrate film may suffer from defects such as pinholes, due to flaws in the coating process or defects therein which impair its barrier properties.

Method used

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  • Gas barrier film and method of manufacturing the same
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  • Gas barrier film and method of manufacturing the same

Examples

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example 1

[0084]A laminate 11 and overcoat laminate 12 were produced as described above. The overcoat laminate 12 was laminated to the laminate 11 so that the atomic layer deposition film 2 faced the UV-curable resin (curable resin layer 5). The UV-curable resin layer was irradiated with 0.7 J / m2 of UV from the support 4 side, and the support 4 was released, to form a gas barrier film 10 including the plastic substrate 1, atomic layer deposition film 2, and overcoat layer 3.

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Abstract

A method of manufacturing a gas barrier film includes depositing an atomic layer deposition film on a surface of a plastic substrate to form a gas barrier laminate, using atomic layer deposition; depositing a curable resin layer on a support from which the layer is peelable, to form an overcoat laminate; laminating the overcoat laminate to the gas barrier laminate, with the atomic layer deposition film and the curable resin layer facing each other, and transferring the curable resin layer onto the atomic layer deposition film; curing the curable resin layer through application of heat or an active energy beam; and releasing the curable resin layer from the support.

Description

CROSS-REFERENCE TO RELATED PATENT APPLICATIONS[0001]This application is a continuation application filed under 35 U.S.C. §111 (a) claiming the benefit under 35 U.S.C. §§120 and 365(c) of International Application No. PCT / JP2016 / 055783, filed on Feb. 26, 2016, which is based upon and claims the benefit of priority of Japanese Patent Application No. 2015-036374, filed on Feb. 26, 2015, the entireties of which are hereby incorporated by reference.TECHNICAL FIELD[0002]The present invention relates to a gas barrier film and a method of manufacturing the same. More particularly, the invention relates to a gas barrier film including a laminate having an atomic layer deposition film on a surface of a substrate formed of polymer material, and an overcoat layer formed on the atomic layer deposition film, and to a method of manufacturing the same.BACKGROUND[0003]Next-generation devices using organic semiconductor techniques are being developed and some are in practical use in fields such as of...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C23C16/455B05D1/00B32B37/14B29C71/02B05D7/04B32B27/08
CPCC23C16/45525C08J7/08C08J2367/02B32B27/08B32B2457/206B05D7/04B05D1/60B32B2307/7242B32B2307/422B32B37/144B32B9/00B32B38/18C23C16/403C23C16/405C23C16/45536C23C16/545B32B37/24B32B2037/246B32B2038/0076C23C16/45523
Inventor TAKASHIMA, NAO
Owner TOPPAN PRINTING CO LTD