In-situ semiconductor processing chamber temperature apparatus

Abstract

In one implementation, a showerhead assembly is provided. The showerhead assembly comprises a first electrode having a plurality of openings therethrough and a gas distribution faceplate attached to a first lower major surface of the electrode. The gas distribution plate includes a plurality of through-holes for delivering process gases to a processing chamber. The gas distribution plate is divided into a plurality of temperature-control regions. The showerhead assembly further comprises a chill plate positioned above the electrode for providing temperature control and a plurality of heat control devices to manage heat transfer within the showerhead assembly. The heat control device comprises a thermoelectric module and a heat pipe assembly coupled with the thermoelectric module. Each of the plurality of heat control devices is associated with a temperature control region and provides independent temperature control to its associated temperature control region.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application claims benefit of U.S. Provisional Patent Application Ser. No. 62 / 521,879, filed Jun. 19, 2017, which is incorporated herein by reference in its entirety.BACKGROUNDField[0002]Implementations described herein generally relate to semiconductor processing, and more specifically, to apparatuses and methods for in-situ temperature measurement for the inside of a semiconductor processing chamber.Description of the Related Art[0003]Semiconductor devices are commonly fabricated by a series of processes in which layers are deposited on a surface of a substrate and the deposited material is etched into desired patterns. As semiconductor device geometries decrease, precise process control during these processes becomes more and more important.[0004]Temperature control is particularly important to achieve repeatable semiconductor manufacture with improved yield and high throughput in chambers, such as etch chambers, for semiconductor...

AI Technical Summary

Benefits of technology

The patent describes a method and apparatus for measuring the temperature of a semiconductor processing chamber. The invention includes a showerhead assembly with a plurality of temperature control regions and heat control devices, such as thermoelectric modules and heat pipes, to provide independent temperature control to each region. The temperature-sensing disc includes one or more cameras for IR-based imaging and can measure the temperature of a chamber surface in real-time. The method enables the adjustment of the chamber surface temperature to compensate for any temperature differences and improve the overall processing efficiency.

Problems solved by technology

Precise manufacturing techniques have small process windows, and even slight variations out of acceptable process control tolerances can lead to catastrophic amounts of production defects.

For example, when the temperature of the showerhead assembly, the chuck surface, or chamber sidewalls is too low, there is an increased risk of polymer deposition on these cold spots, which can undesirably alter etch sidewall profiles.

When, for example, the temperature of the showerhead assembly is too high, there is an increased risk of films on the faceplate of the showerhead assembly cracking and flaking off, which may cause defects on the substrate.

Furthermore, temperature drift of chamber processing surfaces including the gas distribution assembly, chamber sidewalls and chuck surface will also undesirably cause processing results to vary from substrate to substrate.

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