Unlock instant, AI-driven research and patent intelligence for your innovation.

Pipelined latches to prevent metastability

a pipelined latch and metastability technology, applied in the field of memory devices, can solve problems such as delays and/or lags

Active Publication Date: 2019-04-11
MICRON TECH INC
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This approach reduces the lag in receiving and storing data after a write command by minimizing the recovery time from metastability, ensuring accurate data processing and reducing the risk of incorrect initialization.

Problems solved by technology

The disabled clock signal may cause uncertainty in the state of logic circuitry that processes data strobing and / or data inputs in the memory device, which may lead to metastability.
The metastability may cause delays and / or lags when communication between processing circuitry and the memory device is reestablished and the clocking signal is resumed.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Pipelined latches to prevent metastability
  • Pipelined latches to prevent metastability
  • Pipelined latches to prevent metastability

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0014]One or more specific embodiments will be described below. In an effort to provide a concise description of these embodiments, not all features of an actual implementation are described in the specification. It should be appreciated that in the development of any such actual implementation, as in any engineering or design project, numerous implementation-specific decisions must be made to achieve the developers' specific goals, such as compliance with system-related and business-related constraints, which may vary from one implementation to another. Moreover, it should be appreciated that such a development effort might be complex and time consuming, but would nevertheless be a routine undertaking of design, fabrication, and manufacture for those of ordinary skill having the benefit of this disclosure.

[0015]Many electrical devices may include random access memory (RAM) devices that are coupled to processing circuitry, and may provide storage of data for processing. Examples of ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Memory devices may receive data from data processing devices for storage and processing during write operations. The received data may be accompanied by a data strobing signal that informs the memory device that data available in the bus is ready for latching. The data strobing signal may be provided via a tri-stateable or bidirectional connection and, as a result, during initialization of a write operation, the input circuitry may suffer from metastability during an initial transient period. The present application discusses methods and systems that may mitigate metastability by preventing invalid states in the input circuitry when data strobing signal is invalid or disabled. Certain embodiments determine if the data strobing signal is a valid input and, accordingly, adjust the received signal to a fixed value or to a previously received value. The use of latches and differential amplifiers to perform these functions is also discussed.

Description

BACKGROUND1. Field Of The Invention[0001]The present disclosure relates to memory devices, and more specifically to methods to mitigate metastability effects in clocking signals during data access in memory devices.2. Description Of The Related Art[0002]Random access memory (RAM) devices, such as the ones that may be employed in electrical devices to provide data processing and / or storage, may provide direct availability to addressable data storage cells that form the memory circuitry of the device. Certain RAM devices, such as dynamic RAM (DRAM) devices may, for example, have multiple memory banks having many addressable memory elements. RAM devices may also have a command interface that may receive addresses and instructions (e.g., read, write, etc.) for operations that may be associated with those addresses and decoding circuitry that may process the instructions and the addresses to access the corresponding memory banks.[0003]Commands and data to access to the addressable memory...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(United States)
IPC IPC(8): H03K3/037G11C7/10G06F13/16
CPCH03K3/0375G11C7/1039G06F9/383G06F13/161G06F13/1642
Inventor PENNEY, DANIEL B.
Owner MICRON TECH INC