Sensing charge recycling circuitry

Abstract

A memory device include one or more sections of memory banks. Each of the one or more sections may include multiple sensing amplifiers and a digit line to supply voltages to the sensing amplifiers during a refresh of the respective section. The memory device may also include transmission circuitry configured to transmit excess charge remaining on a first digit line of a first section to a second digit line of a second section after a refresh of the first section and before a refresh of the second section.

Description

BACKGROUNDField of the Present Disclosure[0001]Embodiments of the present disclosure relate generally to refreshing memory banks of a memory device. More specifically, embodiments of the present disclosure relate to recycling sensing charges between refreshes of different portions of a memory bank.Description of Related Art[0002]Semiconductor devices (e.g., dynamic random access memory (DRAM) devices) include memory banks that utilize capacitors to store electrical charges indicative of logical ones and zeros. However, the capacitors slowly leak charge. Thus, without intervention, the data stored in the memory banks may be lost. To prevent data loss due to charge leakage, the memory device may refresh data stored in the memory banks using a memory refresh. During a memory refresh, the data is read from a memory bank and rewritten back to the memory bank. However, these refresh operations may consume power with some excess charge remaining on digit lines used to perform the memory re...

AI Technical Summary

Benefits of technology

This approach reduces power consumption, decreases heat generation, and improves system performance by allowing lower wattage operation and more efficient standby modes through reduced refresh and self-refresh currents.

Problems solved by technology

However, the capacitors slowly leak charge.

Thus, without intervention, the data stored in the memory banks may be lost.

However, these refresh operations may consume power with some excess charge remaining on digit lines used to perform the memory refresh after the memory refresh of a portion of a memory bank is completed.

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