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Circuit with a temperature protected electronic switch

a technology of electronic switch and circuit, which is applied in the direction of electronic switching, pulse technique, transistor, etc., can solve the problems of increased temperature of electronic switch, increased voltage drop across electronic switch, and increased electric power dissipation in electronic switch

Active Publication Date: 2014-09-30
INFINEON TECH AUSTRIA AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The patent is about an electronic circuit that has a switch that can be controlled by an external signal. The circuit includes a thermal protection circuit that detects if there is a temperature rise in the circuit and can switch the switch off to prevent damage. This can protect the circuit from overheating and ensures safe use.

Problems solved by technology

When, however, there is a short circuit in the load and when the electronic switch is in the on-state, the voltage drop across the electronic switch increases and the electric power dissipated in the electronic switch increases.
The increase in dissipated power results in an increased temperature of the electronic switch.

Method used

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  • Circuit with a temperature protected electronic switch
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  • Circuit with a temperature protected electronic switch

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Embodiment Construction

[0021]FIG. 1 illustrates an electronic circuit with an electronic switch 1 and a drive circuit 2 that is configured to drive the electronic switch 1. The electronic switch 1 has a load path and a control terminal, where the control terminal is connected to an output of the drive circuit 2 and receives a drive signal SDRV from the drive circuit 2. In the electronic circuit illustrated in FIG. 1, the electronic switch 1 is implemented as a MOSFET, specifically as an n-type MOSFET. The MOSFET has drain and source terminals and a gate terminal. The gate terminal is a control terminal of the MOSFET, and a load path of the MOSFET extends between the drain and the source terminals. It should be noted that implementing the electronic switch 1 as an n-type MOSFET is only an example. The electronic switch 1 could also be implemented as another type of a MOSFET, such as a p-type MOSFET, or as another type of transistor, such as an IGBT, a JFET, or as a BJT.

[0022]The electronic switch 1 can be ...

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PUM

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Abstract

A method can be used for driving an electronic switch integrated in a semiconductor body. A first temperature is measured at a first position of the semiconductor body. A temperature propagation is detected in the semiconductor body. The electronic switch is switched off when the temperature at the first position rises above a first threshold that is set dependent on the detected temperature propagation.

Description

TECHNICAL FIELD[0001]Embodiments of the present invention relate to an electronic circuit with a temperature protected electronic switch, and to a method for driving an electronic switch.BACKGROUND[0002]Electronic switches, such as MOSFETs, IGBTs, or other types of transistors are widely used as electronic switches for switching electrical loads, such as motors, lamps, magnetic valves, and the like. In these applications, the electronic switch is connected in series with the load, where the series circuit with the electronic switch and the load is connected between power supply terminals. The load can be switched on and off by switching the electronic switch on and off.[0003]Usually, the on-resistance of the electronic switch, which is the resistance of the electronic switch in the on-state, is lower than the resistance of the load, so that in a normal operation state a voltage drop across the electronic switch is significantly lower than a voltage drop across the load, when the ele...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): H02H5/04H02H7/22H03K17/08H03K17/082
CPCH02H7/222H03K17/0822H03K2017/0806H02H5/044
Inventor ILLING, ROBERT
Owner INFINEON TECH AUSTRIA AG