Pulsed ion beam source

a technology of ion beams and ion beams, which is applied in the direction of ion beam tubes, electric discharge lamps, instruments, etc., can solve the problems of inability to commercialize, add complexity, size and expense to the system employing such map ion sources, and no commercial implementation has resulted, etc., to achieve efficient localization of gas puffs, reduce the rotation of ion beams, and reduce the effect of ion beam rotation

USRE37100E1Inactive Publication Date: 2001-03-20SANDIA
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Patents(United States)
Current Assignee / Owner
Publication Date
2001-03-20
Estimated Expiration
Not applicable · inactive patent

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Abstract

An improved magnetically-confined anode plasma pulsed ion beam source. Beam rotation effects and power efficiency are improved by a magnetic design which places the separatrix between the fast field flux structure and the slow field structure near the anode of the ion beam source, by a gas port design which localizes the gas delivery into the gap between the fast coil and the anode, by a pre-ionizer ringing circuit connected to the fast coil, and by a bias field means which optimally adjusts the plasma formation position in the ion beam source.
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Description

FIELD OF THE INVENTIONThis invention relates generally to apparatus for producing ion beams. More particularly it relates to magnetically-confined anode plasma (MAP) ion sources. Still more particularly, it relates to such MAP ion sources as are designed to produce minimum ion beam rotation and precise control over the ion species present in the beam.BACKGROUNDA variety of ion beam sources exist. MAP ion sources are particularly interesting because of their ability to shield the ion source structure from the destructive effects of the ion plasma by the magnetic shielding created by the magnetic structure of the MAP ion source.However, most of the prior art MAP ion sources were designed to be used in a beam line that also included downstream steering and confinement of the produced ion beams by various electric and / or magnetic fields. This steering and confinement was necessary because of the beam rotation created by the magnetic structure of these MAP ion sources which imparted sign...

Examples

Embodiment Construction

The following discussion is a description of one system which can be utilized to produce the ion beams for surface treatment of various materials. This system has two major subsystems, the pulsed power source and the MAP ion diode.

The MAP ion diode which forms the present invention, when combined with the RHEPP source, provides for an ion beam generator system capable of high average power and repetitive operation over an extended number of operating cycles for treating large surface areas of materials at commercially attractive costs. In particular, the ion beam generator of the present invention can produce high average power (1 kW-4 MW) pulsed ion beams at 0.1-2.5 MeV energies and pulse durations or lengths of from about 10 nanoseconds (ns)-2 microseconds (.mu.s) or longer as necessary for the particular application. The ion beam generator can directly deposit energy in the top 50 micrometers (.mu.m) of the surface of a material. The depth of treatment can be controlled by varyin...