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Method of forming trench isolation having polishing step and method of manufacturing semiconductor device

a technology of trench isolation and polishing step, which is applied in the direction of semiconductor/solid-state device manufacturing, electrical equipment, basic electric elements, etc., can solve the problems of difficult polishing and wire disconnection, and achieve the effect of satisfying the flattening shape, easy removal, and convenient removal

Inactive Publication Date: 2003-12-23
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

It is an object of the present invention to overcome the foregoing problems in the prior art and provide a means capable of flattening without leaving burying material on a wide (long) protrusion region which is thereby capable of forming trench isolation of a satisfactory flatness, as well as a method of manufacturing a semiconductor device formed with such trench isolation.
Another object of the present invention is to provide a method of manufacturing a semiconductor device having a polishing step of performing flattening after a burying step, wherein a satisfactory flattened shape can be formed even in a case where a distribution of a portion which is to serve as a polishing stopper on a portion to be polished has unevenness, also in a portion in which an area ratio of the stopper layer per unit area is low.

Problems solved by technology

This is because unevenness on the underlying substrate, if any, will lead to occurrence of wire disconnection at a step caused by the unevenness (so-called step disconnection).
However, in this method, if a patterning for the block resist is displaced to form a resist out of the recess as shown by reference numeral 31' in FIG. 13(d), no sufficient flatness can be obtained even if a resist coating film 3' is formed, so that the burying material 5 does not become flat as shown in FIG. 13(e) and, as a result, it is difficult to flatten by means of polishing.
That is, the flattening technique by polishing involves a problem that the extent of polishing depends on the underlying pattern and sometimes it results in unevenness.

Method used

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  • Method of forming trench isolation having polishing step and method of manufacturing semiconductor device
  • Method of forming trench isolation having polishing step and method of manufacturing semiconductor device
  • Method of forming trench isolation having polishing step and method of manufacturing semiconductor device

Examples

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example 1

In this example, the present invention is applied to the formation of an integrated a semiconductor device and, in particular, to the formation of trench isolation in the semiconductor device.

In this example, a structure as shown in FIG. 1(a) is obtained by burying trenches 41-43 by a deposition means that conducts etching and deposition simultaneously (a bias ECR-CVD process is used in this example). Then, an isotropic etching step for isotropically etching the burying material as shown by a broken line in FIG. 1(b) is performed to obtain a structure as shown in FIG. 1(c) before the polishing step. Subsequently, a flat structure as shown in FIG. 1(d) is obtained after the polishing step.

The burying material 5 on a wide protrusion region is etched by the isotropic etching step in FIG. 1(b) into a shape substantially uniform with other portions as shown in FIG. 1(c). Accordingly, a satisfactory flattening is attained by polishing the remaining protruding portions.

More specifically, t...

example 2

Descriptions will be made to Example 2 which includes formation of trench isolation and manufacture of a semiconductor device.

In Example 1, when the burying material is etched back as far as the upper portion of the trench opening in the state shown in FIG. 2(d), that is, when it is to be etched back by the thickness of the burying material on the protrusion region shown by 5C in FIG. 2(d), since the and point can not be judged, it is difficult to control the etching film thickness as the burying material 5 for the isolation portion shown in FIG. 2(e). Example 2 undertakes to overcome the problem.

In Example 2, since SiO.sub.2 which is the burying material after resist patterning can be etched as far as the surface of the support layer is exposed and the burying material (SiO.sub.2) on the protrusion region can be removed completely by polishing in the next step, etching back which is necessary in Example 1 is no longer required.

In this example, a substrate 1 to be formed with trench...

examples 3 , 4

EXAMPLES 3, 4

The following samples are modified from Examples 1-2 described above. While isotropic etching is applied by wet etching using an etching solution before the polishing of the burying material in Examples 1, 2, isotropic etching was conducted by means of dry etching in these examples.

In the examples, SiO.sub.2 as the burying material 5 was isotropically dry etched under the following conditions, instead of etching by hydrofluoric acid as in Examples 1 and 2:

Etching apparatus used: parallel flat type ether

Pressure: 2300 mtorr (306 Pa)

RF power: 550 W

Gas system used: NF.sub.3 = 300 cc / min He= 200 cc / min

Temperature: 80.degree. C.

Satisfactory isotropic etching could be attained by the conditions described above. The conditions were set in order to increase the power of the conducing reaction using fluoric acid radicals as a main etchant and increase the pressure for reducing the directionality of ions (to shorten the mean free path), thereby attaining isotropic etching.

Other p...

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Abstract

A method of forming trench isolation including a burying step of burying trenches by a deposition means for conducting etching and deposition simultaneously and a polishing step of flattening a burying material by polishing is conducted by disposing an isotropic etching step, a multi-layered etching stopper and a protrusion unifying structure. Polishing can be attained with satisfactory flatness uniformly or with no polishing residue even in a portion to be polished in which the etching stopper layer is distributed unevenly. The method can be applied to manufacture of a semiconductor device or the like.

Description

BACKGROUND OF THE INVENTION1. Field of the InventionThe present invention concerns a method of forming trench isolation having a polishing step and a method of manufacturing a semiconductor device having a polishing step. The present invention can be applied to the formation of trench isolation (trench type inter-device separation) in various kinds of electronic materials, a method of manufacturing various kinds of semiconductor devices braving trench isolation, as well as a method of manufacturing various kinds of semiconductor devices having a recess burying step and a subsequent flattening and polishing step. Further, it can be utilized as a method of manufacturing a semiconductor device having a polishing step including a step of burying recesses defined with a plurality of protrusion patterns (that is, defined between each of protrusion patterns) by a burying material and a step of flattening the burying material formed on the protrusion patterns.2. Description of the Prior Art...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): H01L21/762H01L21/70H01L21/02H01L21/311H01L21/3105H01L21/3065H01L21/304H01L21/76
CPCH01L21/3065H01L21/31053H01L21/31055H01L21/31116H01L21/76229
Inventor GOCHO, TETSUOHAYAKAWA, HIDEAKI
Owner SONY CORP
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