Unlock instant, AI-driven research and patent intelligence for your innovation.

Processing system

a processing system and processing technology, applied in the direction of coatings, chemical vapor deposition coatings, electric discharge tubes, etc., can solve the problems of reducing the insulating strength, affecting the workpiece, and affecting the workpiece, so as to improve the plasma resistance, prolong the changing period of the member, and limit the influence of the workpiece

Inactive Publication Date: 2008-01-01
TOKYO ELECTRON LTD
View PDF6 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a novel and improved processing system with insulating members that can be easily attached, changed, and positioned in place. The insulating members are fitted in gas discharge holes of the upper electrode and are designed to easily be attached and changed. The insulating members are inserted into the gas discharge holes through the outlet ends, and the edges of the gas discharge holes are not exposed to the processing chamber, preventing etching by plasma. The insulating members have flanges that cover the rims of the gas discharge holes, extending the life of the upper electrode. The gas discharge holes are finished by a plasma-proofing process to prevent etching. The insulating members are made of a resin that has improved plasma resistance and can be extended the changing period. The processing system includes a processing vessel with an airtight processing chamber and upper and lower electrodes.

Problems solved by technology

Since the insulating members are made of alumina or a fluorocarbon resin, it is possible that particles of aluminum or the fluorocarbon resin are produced, and the particles adhere to the workpiece and exert adverse effects, such as the reduction of insulating strength, on the workpiece.
In this processing system, a plasma produced in a processing chamber flows through the gas discharge holes formed in the upper electrode member and the gas discharge holes of the cooling plate are damaged by the plasma.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Processing system
  • Processing system
  • Processing system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029]Processing systems in preferred embodiments according to the present invention as applied to etching systems will be described with reference to the accompanying drawings, in which parts of substantially the same functions and the same formation will be designated by the same reference characters and the duplicate description thereof will be omitted.

[0030]FIG. 1 is a schematic sectional view of an etching system 100 in a first embodiment according to the present invention. The etching system 100 has a substantially cylindrical processing vessel 104 of, for example, aluminum having surfaces finished by an anodic oxidation process, defining a processing chamber 102 and capable of being sealed in an airtight fashion. The processing vessel 104 is connected to a ground by a grounding line 106. An insulating support plate 108 of, for example, a ceramic material is disposed in the bottom of the processing chamber 102. A substantially cylindrical susceptor 110 serving as a support for...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
dc voltageaaaaaaaaaa
frequencyaaaaaaaaaa
radio frequencyaaaaaaaaaa
Login to View More

Abstract

A processing system has an upper electrode with gas discharge holes of a shape corresponding to the external we of insulating members. The insulating members are formed of a poly(ether etherketone) resin, a polyimide resin, a poly (ether imide) resin or the like. Each insulating member has a step at its outer surface and an internal longitudinal through hole tapered to expand toward the processing chamber. The insulating members are pressed in the gas discharge holes to bring the steps into contact with shoulders formed in the sidewalls of the gas discharge holes. A part of each insulating member, as fitted in the gas discharge hole, projects from a surface of the upper electrode that faces a susceptor.

Description

[0001]This application is a division of U.S. patent application Ser. No. 10 / 278,863, filed Oct. 24, 2002, which is a reissue of U.S. Pat. No. 6,334,983, which resulted from U.S. patent application Ser. No. 09 / 402,393, filed Oct. 5, 1999, which was a 35 U.S.C. 371 National stage filing of PCT / JP / 98 / 0160<?delete-end id="DEL-S-00001" ?> <?insert-start id="INS-S-00002" date="20080101" ?>PCT / JP98 / 01610<?insert-end id="INS-S-00002" ?>, filed Apr. 8, 1998. <?insert-start id="INS-S-00003" date="20080101" ?>This application is one of three divisions of U.S. patent application Ser. No. 10 / 278,863, the other two divisions being U.S. patent application Ser. No. 10 / 463,439, filed Jun. 18, 2003, and U.S. patent application Ser. No. 11 / 055,788, filed Feb. 11, 2005.<?insert-end id="INS-S-00003" ?>TECHNICAL FIELD[0002]The present invention relates to a processing system, such as an etching system.BACKGROUND ART[0003]A prior art etching system is provided with an uppe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(United States)
IPC IPC(8): H01L21/306C23C16/44C23C16/455C23C16/509H01J37/32
CPCC23C16/455C23C16/45565C23C16/5096H01J37/3244H01J37/32477Y10T29/49117Y10T29/532Y10T29/49002Y10T29/53204H01L21/3065
Inventor OKAYAMA, NOBUYUKISAEGUSA, HIDEHITOOZAWA, JUNHAYASHI, DAISUKETAKAYAMA, NAOKIKAZAMA, KOICHI
Owner TOKYO ELECTRON LTD