101results about How to "Guaranteed diffusion" patented technology

The invention relates to a preparation of catalyzing and transforming-absorbing Fe-desulphurizer by high accuracy carbonyl sulfur at medium and low temperature, which has a good hydrogenation effect to the carbonyl sulfur and absorbs the produced carbonyl sulfur. The invention can be used to accurately remove the carbonyl sulfur in the ammonia material gas, coke oven gas, natural gas and composed gas. The desulphurizer is provided with primary active components Fe2O3, CeO2, MnO2, Ni2O3, and secondary components CuO, ZnO, MgO, K2O and etc, and the carriers are Al2O3, ZrO2, and residual binding agent and expanding drilling agent, and water. The process has a reacting temperature of 150-350 DEG C, an airspeed of 500-2000h-1, a carbonyl sulfur concentration in the gas from minim to 5000ppm. The inventive desulphurizer has a high catalytic transforming capacity with a carbonyl sulfur converting ratio more than 99%.

The invention discloses a method for forming a semiconductor structure, comprising the steps: providing a substrate, wherein the surface of the substrate is provided with a layer to be etched; forming a mark layer on the layer to be etched, wherein a part of the mark layer is exposed out of the surface of the layer to be etched; performing plasma etching on the layer to be etched by using the mark layer as a mark to form an opening in the layer to be etched, wherein a radio frequency signal output from a bias radio frequency power source in the plasma etching is a pulse signal, the duty cycle of the pulse signal is reduced along with the increasing of the etching depth, when the bias radio frequency power source is powered on, a part of the layer to be etched is etched to form an etching hole in which an etching byproduct is provided, and when the bias radio frequency power source is powered off, the etching byproduct diffuses from the etching hole. The size of the opening formed by the plasma etching process is precious and even, and the opening etching rate is high.

The invention provides a preparation method of neodymium iron boron permanent magnet material. The method includes: attaching attachment on the surface of a neodymium iron boron magnet parent, sintering under the protection of vacuum or inert gases, and performing aging treatment. The attachment comprises (R1xR2y)aTbMcAdHe alloy powder, wherein R1 is Dy and/or Tb, R2 is at least one of La, Ce, Pr, Nd, Sm, Ho, Y and Sc, T is iron and/or cobalt, M is at least one of Al, Cu, Zn, Sn, Ga, Ge, Nb, V, W, Ti, Ni, Zr, Ta, Mn, Cd and Mo, A is boron and/or carbon, H is hydrogen, 40wt%</=a</=80wt%, 1wt%</=c</=20wt%, 0wt%</=d</=5wt%, 0.2wt%</=e</=1wt%, the balance of b, x>/=10wt%, y>/=0wt%, x+y=100wt%, and the oxygen content of the (R1xR2y)aTbMcAdHe alloy powder is lower than 1000ppm. Compared with the prior art, the neodymium iron boron permanent magnet material has the advantages that the residual magnetism (Br), coercive force (Hcj) and maximum magnetic energy product ((BH)max) are increased.

The rotary continuous microwave drier includes one microwave drying oven with inner cavity with wall painted with one layer of PTFE, right and left parallel vertical baffles of metal plates surface painted with PTFE on the two sides of the oven, one 4-20 deg inclined rotary container with material feeding pipe and air exhaust pipe extending beyond the side oven all at the high end and material discharge pipe and air intake pipe extending beyond the side oven wall at the lower end, microwave suppressors set at the joints between each of the said pipes and the side oven wall. The apparatus dries material inside the container continuously and automatically, and the evaporated water vapor is limited inside the container and thus has no influence on the circuit, resulting in long service life and high operation safety of the equipment.

The invention discloses high-viscosity modified asphalt based on SBS/polyurethane compounding and a preparation method thereof. The preparation method includes: a) heating matrix asphalt to molten, adding a SBS modifier and uniformly mixing the components to make a mixture A, thus providing SBS-modified asphalt with incomplete swelling development; b) shearing the mixture A to obtain swelling-developed SBS-modified asphalt, adding a stabilizer to guarantee stability of a mixture B; c) adding a chain extender and a coupling agent, wherein the chain extender is a key factor of forming binding force after a curing reaction on a polyurethane prepolymer, and the coupling agent can reduce the chemical reactions between the polyurethane compound and micro amount of water in air, thus reducing theinfluence on storage stability and modification effect on the asphalt due to generated gas; d) finally, adding the polyurethane prepolymer, of which a molecular structure contains an active isocyanate group, which can react with a hydroxyl group, in the asphalt, to generate a carbamate group, therefore, a chemical reaction is carried out with amino groups in the matrix asphalt to generate allophanate.

The invention belongs to the field of electrode materials, and discloses a high-loadng self-supporting thick electrode prepared through phase inversion and a preparation method and application thereof. The electrode prepared by the process has the following advantages: 1) a current collector, a binder and additional conductive carbon are not needed, so that the overall energy density of the electrode is greatly improved; 2) the thickness of the electrode is 300-3000 [mu]m, the loading capacity is 8-55 mg cm <-2 >, the thick electrode can improve the proportion of active materials in the wholeenergy storage equipment, and the energy density of the whole energy storage equipment is improved; 3) compared with a thin electrode, under the condition of achieving the same energy storage capacity, the high-loading thick electrode has fewer preparation steps and is lower in production cost; and 4) the electrode is provided with micron-sized finger-shaped holes communicated with the surfaces ofthe two electrodes and hundred-nanometer-sized holes dispersed in the whole electrode, and the holes ensure that the electrode has excellent rate capability even under a high loading capacity. The method promotes the industrial application and mass production of the high-loading self-supporting thick electrode.

The invention discloses a forming method of a semiconductor device, and the method comprises the steps: providing a semiconductor substrate which is provided with a fin part and an isolation structure, wherein the isolation structure covers a part of side walls of the fin part; forming a first pseudo-gate structure across the fin part on the isolation structure, wherein the first pseudo-gate structure comprises a first pseudo-gate medium layer and first pseudo-gate electrode layers, the first pseudo-gate medium layer covers a part of the top surface and a part of side wall surfaces of the finpart, and the first pseudo-gate electrode layers are located on the first pseudo-gate medium layer and a part of isolation structure; forming interlayer medium layers on the isolation structure and the fin part, wherein the interlayer medium layers cover a part of side walls of the first pseudo-gate structure; removing the first pseudo-gate electrode layers, and forming an opening; carrying out the doping of modified ions in the isolation structure at the bottom of the opening, and forming a modified layer in the isolation structure, wherein the modified structure is aligned with the surface of the modified layer; and removing the first pseudo-gate medium layer through etching. The method can reduce the loss of the isolation structure, enables the isolation performances of the isolation structure and the modified layer for the fin part to be improved, and meets the demands of the technological design.

The invention discloses a polyculture pond and a polyculture method for penaeus monodon, holothuria scabra and siganus oramin. The circumferential inner edge of the polyculture pond is provided with aslope. The polyculture pond is characterized in that several inhabitation piles are arranged close to the bottom of the slope and are alternately distributed around the edge of the polyculture pond,each inhabitation pile comprises a column and a ceiling located at the top of the column, and an impoundment cover is arranged around the middle of the column and faces the slope. Holothuria scabra isstocked in the impoundment covers, at the same time, penaeus monodon and siganus oramin are cultured in water in the polyculture pond together, and penaeus monodon is fed with bait regularly. By culturing holothuria scabra and siganus oramin together in the polyculture pond where penaeus monodon is mainly cultured, bottom mud dirt and water algae in the polyculture pond can be effectively controlled respectively, it is guranateed that both the bottom of the polyculture pond and water in the polyculture pond can meet growth conditions of penaeus monodon all the time, and polyculture in this way provides a good economical culture mode.

The invention discloses a preparation method of a spherical bead like walnut shell based porous carbon adsorption material. The preparation method comprises following steps: at first, activating walnut shell powder by phosphoric acid, preparing a uniform solution, wrapping the surface of cenospheres by the solution, filling the solution into the cavities of the cenospheres , carrying out carbonization, removing fly ash to obtain a hollow structure of fly ash, and finally generating micro holes by a high temperature alkali activation method to obtain the hierarchical porous carbon material with a high specific surface area. Cheap agricultural wastes namely walnut shells are taken as the carbon source, solid industrial wastes namely fly ash cenospheres (FACs) are taken as the hard template, and the prepared hierarchical porous carbon material is used to process sewage of beta-lactam antibiotics, and the processing effect is good.

The invention discloses a method for preparing a super martensitic stainless steel EBSD sample. The method comprises the steps of polishing solution preparation, sample grinding, electrolytic polishing and polished surface cleaning; a polishing solution is prepared by mixing HCLO4, CH3COOH and C2H5OH according to the volume ratio of (1 +/-0.1): (3 +/-0.1): (6 +/-0.1), a stainless steel sheet is used as a cathode, and the super martensitic stainless steel sample serves as an anode; then an electrolysis device is placed on a magnetic stirrer, liquid nitrogen is used for cooling the electrolyte,and the power voltage is adjusted; finally, a stainless steel clamp is used for immersing the sample into the electrolyte, the grinding face is parallel to the cathode stainless steel sheet, the powercurrent is adjusted, and polishing is started; and after polishing is completed, the sample is taken out to be wiped and dried. According to the method, the polishing time is short, the polishing efficiency is high, and the EBSD collecting and calibrating rate can reach 95% or above.

The invention discloses an acid, alkali and organic solvent resisting diaphragm material, and a preparation method and an application thereof. The diaphragm material is prepared from hydrophilic and hydrophobic block copolymers, and has a nano-pore structure. The nano-pore structure in the diaphragm material is prepared through an inorganic filler structure preparation method or an immersion phase separation method. The acid, alkali and organic solvent resisting diaphragm material has polar hydrophilic groups, and the surface of a diaphragm can be further grafted with other organic molecules with permselective functional groups by using above active groups, so realization of diaphragm functionalization is facilitated to meet various separation requirements. The diaphragm material can be applied in cation separating systems, such as separation of ions of lithium, copper, gold, platinum, palladium, silver, boron, rubidium, cesium, antimony, bismuth, nickel, mercury and other metals.

The invention discloses a preparation method for an aluminum foil applicable to a lithium ion battery. The preparation method comprises the steps of 1, grinding rare earth elements to obtain a nanometer rare earth material with the particle diameter of 1-200nm, enabling the nanometer rare earth material to be ground, mixed and stirred with aluminum powder, pressing the mixture into pressed powder, and then melting the pressed powder and casting to obtain a rare earth aluminum intermediate alloy ingot; 2, adding the rare earth aluminum intermediate alloy ingot and the aluminum ingot into a smelting furnace to be smelted to obtain a blank material; 3, performing cast rolling on the smelted blank material to obtain an aluminum plate blank material; 4, performing annealing and heat treatment on the aluminum plate blank material; 5, performing continuous cold rolling on the aluminum plate blank material to obtain a primary product; and 6, performing finish rolling on the primary product to obtain the aluminum foil. Correspondingly, the invention also discloses the aluminum foil prepared by the method. The aluminum foil is high in intensity, thermal conductivity and electric conductivity, good in mechanical performance and resistant to electrochemical corrosion.

The invention belongs to the field of electrochemical materials, and provides a porous carbon sphere packaged vanadium oxide heterogeneous core-shell sphere structure material and a preparation method thereof, a lithium-sulfur battery diaphragm and a lithium-sulfur battery. The preparation method of the porous carbon sphere encapsulated vanadium oxide heterogeneous core-shell sphere structure material comprises the following steps: stirring water, ethanol, ammonia water, tetraethyl orthosilicate, resorcinol and formaldehyde, carrying out a stirring reaction to obtain a carbon-coated silicon dioxide core-shell structure, carbonizing the carbon-coated silicon dioxide core-shell structure, adding the carbon-coated silicon dioxide core-shell structure into a sodium hydroxide solution to obtain a hollow porous carbon sphere, mixing ammonium metavanadate, ethanol and nitric acid to obtain a vanadium oxide solution, adding the hollow porous carbon spheres into the vanadium oxide solution, and carrying out ultrasonic treatment and hydrothermal reaction to obtain a product. According to the invention, the amount of a vanadium oxide precursor entering porous carbon spheres is controlled by adjusting ultrasonic time so as to achieve manual control of a nano structure, and the product takes the non-polar carbon spheres as a surface layer so as to achieve an adsorption effect on polysulfide and show high conversion efficiency when sulfur exists in the inner layer.

The invention discloses a device for detecting the heat dissipation performance of a phase change material. The device comprises a heat insulating plate, a sheet heating film, a phase change material cube module and thermocouples, so that the heat insulating plate and the phase change material cube module form a wrapping structure on the sheet heating film, and the temperature of the phase change material cube module is detected through the thermocouples. The invention also discloses a method for detecting the heat dissipation performance of a graphene-paraffin composite material. The device for detecting the heat dissipation performance of the phase change material is adopted, one side with a graphene-paraffin sample is upturned, a connecting circuit applies constant heat power to the heating film, the temperature change of every thermocouple is detected and recorded at regular intervals, and statistic analysis of data is carried out to analyze the temperature change curve of the graphene-paraffin composite at a given power. The heat dissipation effects of the graphene-paraffin composite material with different ratios can be conveniently and accurately detected, and the heat dissipation performances of graphene-paraffin composite material with different ratios can be serially compared and analyzed.

The invention discloses a high-protection pouring bus duct which comprises a bus duct body, a lower shell, a heat dissipation assembly, first damping assemblies and second damping assemblies. Bus bares are arranged in the bus duct at equal intervals, cavities are evenly distributed in the bus duct, the cavities of the bus duct are located between the adjacent bus bars, and a protection plate is arranged on the outer surface of the bus duct. An upper shell is arranged at the upper end of the lower shell, and the outer surface of the protection plate is slidably connected with the inner wall surfaces of the upper shell and the lower shell; the heat dissipation assembly is arranged in the cavity of the bus duct; the first damping assemblies are arranged at the bottom end of the protection plate and the upper end of the bottom plate of the lower shell respectively; and the second damping assemblies are symmetrically arranged at the lower surface of the protection plate and the upper surface of the bottom plate of the lower shell. The high-protection pouring bus duct has the advantages that the high-protection pouring bus duct is extremely high in anti-vibration performance and good inheat dissipation performance, the aging rate can be decreased, the service life can be prolonged, flame-retardant and damp-proof effects can be realized, the practical performance can be improved, andthe high-protection pouring bus duct is convenient to use.

The invention discloses a tissue homogenizing mechanism based large-heat-input gas electrical vertical welding gas shielded flux cored wire. The tissue homogenizing mechanism based large-heat-input gas electrical vertical welding gas shielded flux cored wire comprises flux-cored wire skin and powder, wherein the flux-cored wire skin adopts a cold-rolled thin steel strip, the powder accounts for 15-25% of total mass of the flux-cored wire, and the powder consists of the following components in percentage by mass: 1-3% of one or two of titanium dioxide or rutile, 2-6% of feldspar, 1-4% of sodiumsilicate, 1-4% of lithium oxide, 4-10% of low-carbon ferromanganese iron, 4-8% of ferrosilicon, 1-5% of aluminium powder, 2-5% of ferro-molybdenum, 2-6% of nickel powder, 4-8% of rare-earth silicon,0.05-0.1% of boron powder, and the balance of reduced iron powder. The structure homogenizing mechanism based large-heat-input gas electrical vertical welding gas shielded flux cored wire can be applied to large-heat-input gas electrical vertical welding of 100 kJ/cm or more for a medium-thickness steel plate, meets large-heat-input gas electrical vertical welding of the steel-grade structural steel medium-thickness plate of 690 MPa or lower, and can reach maximum welding heat input of 300 kJ/cm.

The invention discloses an antistatic epitaxial structure and a manufacturing method thereof. The epitaxial structure comprises a buffer layer, an N-type GaN layer, an active layer and a P-type GaN layer which are sequentially arranged on a substrate, characterized in that it is characterized in that it comprises, a composite layer is arranged between the N-type GaN layer and the active layer; thecomposite layer comprises a plurality of silicon concentration changing GaN layers. The silicon concentration change GaN layer comprises a first GaN layer, a second GaN layer arranged on the first GaN layer, a third GaN layer arranged on the second GaN layer, and a fourth GaN layer arranged on the third GaN layer. Wherein the doping concentration of silicon in the first GaN layer is zero, and thedoping concentration of silicon in the second GaN layer and the fourth GaN layer is smaller than the doping concentration of silicon in the third GaN layer. According to the invention, the compositelayer is arranged between the N-type GaN layer and the active layer, and the current can be uniformly distributed to the whole epitaxial structure after passing through the composite layer, so that the current cannot be concentrated on a certain region or point, the antistatic capability of the epitaxial structure is improved, and the active layer is prevented from being broken down by static electricity.

The invention relates to the technical field of projection equipment, in particular to a vehicle-mounted projector with a fine adjustment mechanism and a using method thereof. The vehicle-mounted projector comprises a vehicle-mounted projector body and a base, a sound playing hole is fixedly connected to the left side of the front end face of the vehicle-mounted projector body, a shielding deviceis arranged at the front side of the sound playing hole, and the outer side of the shielding device is fixedly connected with the vehicle-mounted projector body. A lens is fixedly connected to the right side of the front end face of the vehicle-mounted projector body, a supporting device is rotatably connected to the lower end face of the vehicle-mounted projector body, a rotating shaft is arranged on the lower end face of the supporting device, and the base is arranged at the outer side of the rotating shaft. According to the vehicle-mounted projector, by arranging a rotating ball, the supporting shaft, a sliding clamping plate, the supporting rod, the sliding block, a telescopic spring and a limiting rod, the vehicle-mounted projector can be conveniently disassembled and assembled through the rotating ball and the supporting rod, the overall disassembly is not needed, and great convenience is achieved; the rotating ball is spherical, so that it is guaranteed that the vehicle-mountedprojector can rotate, and the inclination angle of the vehicle-mounted projector can be conveniently adjusted.

The invention relates to the technical field of aquaculture, and discloses an artificial fish reef with a high proliferation effect. The artificial fish reef comprises a fish reef frame, a spiral cylinder is arranged in the fish reef frame, and the spiral cylinder is fixedly connected with the inner wall of the fish reef frame through a connecting rod. According to the artificial fish reef with the high proliferation effect, the spiral cylinder is additionally arranged in a traditional artificial fish reef so that seawater can actively enter the spiral cylinder through a water inlet by using the self-flowing of the seawater; a groove wall is formed in the inner part of the spiral cylinder, spiral rising of the seawater entering the spiral cylindrical can be promoted along the groove wall by means of a spiral rising structure of the groove wall, generated vortex water flow can efficiently drive nutrients of the seabed to move towards the middle upper layer of the seawater along with therising water flow, the maximum diffusion of the nutrients in the middle upper layer of the water area can be ensured through a larger outlet in the top, the rapid gathering and growth of bait are guaranteed, and therefore a better fish swarm gathering effect is achieved.

The invention discloses a preparation method of tubular metal catalyst comprising dissolving metal salt and sodium nitrate in dimethyl sulfoxide to obtain mixed solution; taking aluminum oxide porous template with nano path as template, conducting electrochemical deposition of the mixed solution at the nano path, and removing the template to obtain the tubular metal catalyst. The invention takes polar aprotic solvent dimethyl sulfoxide (DMSO) as solvent and electrolyte, since DMSO contains S group with weak absorption effect to metal surface, when metal is reduced to particles, DMSO moleculeswill absorb on the particle surface to inhibit the particle from growing large to make the prepared tubular metal catalyst wall thin and to increase the activated area. Furthermore, DMSO with relatively wide electrochemical window, high dielectric constant and high viscosity can ensure the prepared tubular metal catalyst wall is thin and made of particles, the length diameter ratio is high and the wall is uniform.

The invention discloses a high temperature resistant electromagnetic shielding copper wire, comprising a copper wire. The copper wire comprises an inner copper core. The outer part of the copper core is sleeved with a tin plating layer. The outer part of the tin plating layer is sleeved with a fixed layer. The outer part of the fixed layer is sleeved with a waterproof layer. The outer part of the waterproof layer is sleeved with a fireproof layer. The outer part of the fireproof layer is sleeved with a flame retardant layer. As for the high temperature resistant electromagnetic shielding copper wire, a separation layer is disposed between the copper core and the tin plating layer so that the copper matrix can be effectively prevented from diffusing into the tin plating layer; the waterproof layer is arranged to effectively prevent the internal structure from being eroded and rusted; at the same time, the fireproof layer and the flame retardant layer are provided, which can effectively protect the internal structure from fire; and an electromagnetic isolation layer is provided, which can effectively prevent external electromagnetic interference when the tinned copper wire is used. The plurality of protective layers are provided so that the internal structure is protected, the service life of the tinned copper wire is prolonged, and the waste of resources is reduced, which can effectively solve the problems in the background art.

The invention discloses a composite film layer with a sandwich structure and a preparation method of the composite film layer, and belongs to the field of titanium alloy coatings. According to the preparation method, a titanium alloy is electroplated with a Ni/Cu/Ni composite coating of the sandwich structure, and then vacuum circulation heat treatment is conducted, so that titanium atoms, nickelatoms and copper atoms in the composite coating diffuse mutually, and holes formed by transition and migration of the atoms are gathered; the temperature is increased from 300-350 DEG C to 500-550 DEGC, heat preservation is conducted for 30-40 min, so that the titanium atoms, the nickel atoms and the copper atoms form NixTiy and CuxTiy intermetallic compounds, and stress concentration and microcracks caused by interatomic rapid phase change are avoided; the temperature is increased from 500-550 DEG C to 750-800 DEG C, and heat preservation is conducted for 30-40 minutes, so that the intermetallic compounds further grow, disperse and diffuse; and cooling with a furnace is conducted, and the compact sandwich structure film layer in which the NixTiy and CuxTiy intermetallic compounds are dispersedly distributed is formed.

The invention relates to a semiconductor-on-insulator device and a manufacturing method thereof. The method comprises the following steps: providing a semiconductor-on-insulator substrate; forming a patterned polycrystalline silicon structure on the semiconductor layer; photoetching and doping the body leading-out region photoetching plate to form a first conductive type ion doped region, and photoetching and doping the source-drain region photoetching plate to form a source region, a drain region and doped polycrystalline silicon; and carrying out thermal diffusion to enable the first conductive type ion doped region to diffuse to form a body lead-out region. According to the invention, the polycrystalline silicon structure has no work function difference, so that the turn-on voltage of aparasitic channel is consistent with that of a main channel region, and the hump phenomenon of a narrow-channel device can be avoided; and when the body leading-out region is doped, the doping windowis separated from the body region isolation polycrystalline silicon by a proper distance, so that the impurities in the active region can be diffused to the poly boundary, and a good body region leading-out effect can be ensured.

The invention provides a semiconductor laser with internal optical grating. The semiconductor laser comprises a substrate, a lower covering layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper covering layer and a top layer sequentially from bottom to top. The upper waveguide layer comprises a first upper waveguide layer and a second upper waveguide layer, the first upper waveguide layer is positioned above the active layer adjacently, the second upper waveguide layer is positioned below the upper covering layer adjacently, and a optical grating layer is arranged between the first upper waveguide layer and the second upper waveguide layer. By the optical grating layer between the first upper waveguide layer and the second upper waveguide layer, spectrum quality and temperature stability of the semiconductor laser can be greatly improved, and power consumption and size of the laser can be reduced.