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Method for manufacturing polysilicon of thin-film transistor

A technology of thin-film transistors and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., and can solve the problems of high crystallization rate, poor stability, and inconsistent characteristics of polysilicon layer components in the excimer laser annealing method

Inactive Publication Date: 2007-10-10
RITDISPLAY
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, due to the extremely high crystallization rate of the excimer laser annealing method, the size of the formed grains is less than 100nm
In addition, due to the overlapping phenomenon of laser beams and poor pulse-to-pulse stability, the device characteristics of the recrystallized polysilicon layer are not consistent.

Method used

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  • Method for manufacturing polysilicon of thin-film transistor
  • Method for manufacturing polysilicon of thin-film transistor
  • Method for manufacturing polysilicon of thin-film transistor

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Embodiment Construction

[0032] The polysilicon manufacturing method of the thin film transistor according to the preferred embodiment of the present invention will be described below with reference to the related drawings, wherein the same elements will be described with the same reference symbols.

[0033] As shown in FIG. 2, a polysilicon manufacturing method of a thin film transistor according to the first embodiment of the present invention includes the following steps: providing a substrate (S01); depositing a first amorphous silicon layer (S02) on the substrate; An excimer laser irradiates the first amorphous silicon layer to form a crystal layer (S03); deposits a second amorphous silicon layer on the seed layer (S04); and performs furnace tube annealing (S05).

[0034] As shown in FIG. 3A , a substrate 11 is provided in step 501 . Here, the substrate 11 can be a silicon substrate, a glass substrate or a plastic substrate. In this embodiment, a buffer oxide layer (Buffer oxide layer) 12 is for...

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Abstract

The invention relates to a making method of polycrystalline silicon of a film transistor, containing the following steps: providing a substrate; depositing a first noncrystalline silicon layer on the substrate; using a quasimolecule laser to irradiate the first noncrystalline silicon layer to form a crystal seed layer; depositing a second noncrystalline silicon layer on the crystal seed layer; making furnace tube annealing.

Description

technical field [0001] The invention relates to a polysilicon manufacturing method of a thin film transistor, in particular to a polysilicon manufacturing method applied to a low temperature (low temperature processed, LTP) polysilicon thin film transistor. Background technique [0002] Low-temperature polysilicon thin film transistors are generally used in large-area displays such as active matrix liquid crystal displays (AMLCDs) and active matrix organic light-emitting displays (AMOLEDs). Due to the advantages of low-temperature polysilicon thin-film transistors such as faster electron mobility, it has become one of the mainstream processes of the new generation. However, one of the most difficult steps in fabricating high-performance low-temperature polysilicon thin film transistors is converting amorphous silicon (a-Si) into polysilicon (poly-Si). [0003] In the prior art, solid phase crystallization (SPC) is generally used to convert the amorphous silicon layer on the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/20H01L21/324H01L21/336
Inventor 范庆麟
Owner RITDISPLAY
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