The invention discloses an automatic
correction method for an
excimer laser annealing process OED, which does not need manual operation, is convenient to implement, reliable in performance, efficientand accurate, and comprises the following steps: acquiring a real-time Mura value by adopting a Mura quantification method, and reporting the Mura value to a
control system; comparing the Mura value with a preset Mura value range, if the Mura value exceeds the preset Mura value range, controlling the
excimer laser annealing device to correct the optimal
energy density. The
correction method comprises the steps that (1) a substrate with an
amorphous silicon layer on the surface is provided, and the
amorphous silicon layer is divided into a plurality of areas; (2)
excimer lasers with different energy densities are used for irradiating all the areas respectively; (3) the Mura value of each region is quantified by adopting a Mura quantification method, wherein the
energy density of the excimerlaser corresponding to the region with the minimum Mura value is the optimal
energy density; and (4) the product substrate with the
amorphous silicon layer is irradiated by the
excimer laser annealing device through the
excimer laser with the optimal energy density.