36 results about "Excimer laser irradiation" patented technology

In the present invention, in a water soluble resin composition for use in a method for pattern formation in which a covering layer is provided on a resist pattern formed of a radiation-sensitive resin composition capable of coping with ArF exposure to increase the width of the resist pattern and thus to realize effective formation of higher density trench or hole pattern, the size reduction level of the resist pattern layer can be further increased as compared with that in the prior art technique, and, in addition, the size reduction level dependency of the coarse-and-fine resist pattern can be reduced. A method for pattern formation using the water soluble resin composition is also provided. The water soluble resin composition which is usable for the method for pattern formation applicable to ArF excimer laser irradiation comprises a water soluble resin, an acid generating agent capable of generating an acid upon heating, a surfactant, a crosslinking agent, and a water-containing solvent.

The invention provides a flexible substrate, a preparation method thereof, a flexible display device, a preparation method thereof, a display substrate, and a display device in order to solve a problem that in a flexible device manufacture process in the prior art, laser energy has an adverse effect on the polycrystalline silicon active layer of a thin-film transistor and is liable to cause flexible layer carbonization in a flexible display device stripping process. The flexible substrate comprises an ultraviolet light absorption layer arranged between two flexible layers. When the active layer converts amorphous silicon into polycrystalline silicon by means of excimer laser irradiation, the flexible substrate with the sandwiched ultraviolet light absorption layer may absorb redundant laser energy by means of the ultraviolet light absorption layer in order to prevent the flexible layers from being heated and carbonized. When the flexible substrate and a glass substrate are separated, a stripping laser beam is injected from the glass substrate and the flexible substrate may absorb redundant laser energy by means of the ultraviolet light absorption layer in order to prevent the laser beam from having an adverse effect on the performance of the active layer.

This present invention discloses a method for preparing graphene, a thin-film transistor, an array substrate, and a display panel. Above all, an amorphous carbon thin film and a catalyst metal thin film are formed on a base substrate in this order. Then, the catalyst metal thin film and the amorphous carbon thin film are allowed to form a eutectic at a high temperature caused by an excimer laser in a manner of excimer laser irradiation. When the irradiation is finished, the surface temperature of the catalyst metal thin film is drastically decreased, allowing most of carbon atoms of the amorphous carbon thin film to be locked in the catalyst metal thin film and only a small amount of carbon atoms to be precipitated on the lower surface of the catalyst metal thin film, so that a graphene thin film is formed. Since the above described the method employs excimer laser irradiation to grow a graphene thin film, and the excimer laser has minor effect on other film layers located under the graphene thin film, graphene can be formed on the base substrate without a transfer process. Therefore, damage and contamination of graphene thin film caused by the transfer process are prevented and properties of graphene thin film are ensured.

A method of improving the properties of adhesion of a non-oxide ceramic substrate before gluing it includes the steps of irradiating the surface of the ceramic substrate using an excimer laser and applying a coupling agent to the irradiated surface.

The invention is a manufacturing method for gas electron multiplier polymers film mesh applied to the X ray detection. The invention uses 308nm norm molecular laser to irradiate the polyimide (PI) coated with red copper film at the two surfaces, the micro-aperture mesh are formed on the PI film by using the effect of the micro-aperture array mask board attached on the PI film. The mesh with any size can be acquired with X-Y scanning platform. The invention produces the gas electron multiplier polymer film mesh can be acquired by using 308nm norm molecular laser poring method. It is simple and effective.

The invention relates to a method for utilizing excimer laser irradiation to prepare magnetic functional textile, which comprises: adopting a coprecipitation method to prepare nanometer ferroferric oxide granules, then, using oleic acid to modify the surface of the nanometer ferroferric oxide granules, then, dipping polyester fabrics in ethanol solution which contains the nanometer ferroferric oxide granules whose surface is modified by the oleic acid, lastly, utilizing excimer laser irradiation 222nm to irradiate two surfaces of the polyester fabrics after dipping, and finally obtaining the magnetic functional textile with comparatively high fastness to washing. The magnetic functional textile which is prepared by the method has good washability, the method of the invention is simple and novel and has simple technique, few equipment, small strength damage to the polyester fabrics, low energy consumption, convenient extension and the like.

A method for fabricating a thin-film transistor is described. A structure is provided, including a substrate transmitting an excimer laser light, a diffusion prevention film on the substrate, a gate electrode and a gate insulating film on the diffusion prevention film, and an oxide semiconductor layer on the gate insulating film. The structure is irradiated with an excimer laser light from the side of the substrate, so that two outer regions of the oxide semiconductor layer beside the region corresponding to the gate electrode are irradiated by the excimer laser light, with the gate electrode as a mask, to be reduced in resistance and thereby one of the two outer regions forms a source region and the other one forms a drain region. The diffusion prevention film includes a SiN:F film containing fluorine in a SiN film.

An excimer laser annealing apparatus and the application of the same for stabilizing the atmosphere surrounding an area irradiated by an excimer laser. The apparatus includes a chamber, a gas diversion nozzle, an excimer laser and a gas supply device. The gas diversion nozzle is positioned inside the chamber. The laser beam produced by the excimer laser passes through the gas diversion nozzle. The gas supply device connects with the gas diversion nozzle for providing a jet of gas to the laser-irradiated area and carrying away any pollutants from the irradiated area.

Concerns lithium-doped diamond: Low-resistivity n-type semiconductor diamond doped with lithium and nitrogen, and a method of manufacturing such diamond are provided. Low-resistivity n-type semiconductor diamond containing 10¹⁷ cm⁻³ or more of lithium atoms and nitrogen atoms together, in which are respectively doped lithium atoms into carbon-atom interstitial lattice sites, and nitrogen atoms into carbon-atom substitutional sites, with the lithium and the nitrogen holding arrangements that neighbor each other. To obtain low-resistivity n-type semiconductor diamond, in a method for the vapor synthesis of diamond, photodissociating source materials by photoexcitation utilizing vacuum ultraviolet light and irradiating a lithium source material with an excimer laser to scatter and supply lithium atoms enables the diamond to be produced.

The invention provides a method for quickly erasing and writing a conductive PVDF (Polyvinylidene Fluoride) layer through a water film. The method comprises the following steps of: covering the water film above a conductive layer to be erased, generating a high-temperature high-pressure environment in an active region by utilizing an excimer laser irradiation technology, and erasing the conductive layer due to the breakage of the conductive layer in a water film laser vaporization process. According to the method for quickly erasing and writing the conductive PVDF layer through the water film, disclosed by the invention, the surface of a reduced material can be quickly modified again through laser irradiation, thus the material is recycled.

The invention relates to a method of rapidly generating and controlling a polyvinylidene fluoride conducting layer, belonging to the preparing and laser micro-processing field of conducting polymer. An excimer laser mask direct writing light path system is used for texturing the surface of a sample, and then an excimer laser irradiation light path system is used for modifying the sample after the texturing. Defects are implanted into the surface of the sample. The modifying period is shortened, and simultaneously the conducting region around the defected parts of the modified region which are distributed symmetrically can be controlled due to the introduction of the defects.

The invention provides an aviation fluorine-containing polymer insulated wire and cable surface laser character printing method. The method has the advantages that the surfaces of a wire and a cable are irradiated with excimer lasers with center laser density, so that titanium dioxide molecules contained in insulating or sheath materials of the wire and the cable change color due to induction, the original white color is changed into the black color, and the purpose of identification is achieved; the identification generated according to the method is permanent and can pass a fastness test of any standard, and meanwhile characters are clear. For a wire and a cable which are not round, the character printing purpose can not be achieved by the adoption of a type wheel printing method.

The invention discloses an automatic correction method for an excimer laser annealing process OED, which does not need manual operation, is convenient to implement, reliable in performance, efficientand accurate, and comprises the following steps: acquiring a real-time Mura value by adopting a Mura quantification method, and reporting the Mura value to a control system; comparing the Mura value with a preset Mura value range, if the Mura value exceeds the preset Mura value range, controlling the excimer laser annealing device to correct the optimal energy density. The correction method comprises the steps that (1) a substrate with an amorphous silicon layer on the surface is provided, and the amorphous silicon layer is divided into a plurality of areas; (2) excimer lasers with different energy densities are used for irradiating all the areas respectively; (3) the Mura value of each region is quantified by adopting a Mura quantification method, wherein the energy density of the excimerlaser corresponding to the region with the minimum Mura value is the optimal energy density; and (4) the product substrate with the amorphous silicon layer is irradiated by the excimer laser annealing device through the excimer laser with the optimal energy density.

A laser crystallization system includes a transfer part that transfers a substrate on which an amorphous silicon thin film is deposited into a chamber, a laser irradiation part that irradiates an excimer laser to the substrate for crystallization of the amorphous silicon thin film in the chamber, a stage that supports the substrate in the chamber, a measuring part that measures a light transmittance value of the substrate, and a controller that controls the laser irradiation part to irradiate the excimer laser to the substrate when the light transmittance value is equal to or lower than a reference transmittance value and controls the laser irradiation part not to irradiate the excimer laser to the substrate when the light transmittance value is higher than the reference transmittance value.