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Water-soluble resin composition and method of forming pattern therewith

一种水溶性树脂、树脂组合物的技术，应用在放射源辐射的应用、电气元件、电路等方向，能够解决扩散不充分、抗蚀图尺寸减小水平差异、抗蚀图层精细度水平不能令人满意等问题，达到厚度提高、优异可涂敷性的效果

Inactive Publication Date: 2007-04-11
MERCK PATENT GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Furthermore, in some cases the level of fineness of the resist layer was not satisfactory, possibly because the diffusion of acid from the resist pattern was insufficient
Also, in the prior art, the increase in the complexity of the resist pattern causes a problem that the difference in the level of size reduction of the coarse and fine patterns of the resist pattern

Method used

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  • Water-soluble resin composition and method of forming pattern therewith
  • Water-soluble resin composition and method of forming pattern therewith
  • Water-soluble resin composition and method of forming pattern therewith

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Embodiment 1 (preparation of water-soluble resin composition)

[0043] With 18.7g containing polyvinylpyrrolidone-co-polyvinylimidazole (molecular weight 75000, copolymer composition vinylpyrrolidone: vinylimidazole=0.76: 1) as the water-containing water-soluble resin solution (30wt%) of water-soluble resin, dissolve to 79.2% at room temperature liters of water to obtain a solution. To this solution was added 0.65 g of aqueous triethylamine p-toluenesulfonate salt solution (70% by weight). Next, 1.52 g of 1,3-dimethoxymethyl-4,5-dimethoxyimidazoline (trade name: Nikalac MX-280, produced by Sanwa Chemical Co.) and 0.05 g of crosslinking agent were added thereto. Polyoxyethylene alkyl ether (trade name: Pionion D1420, manufactured by Takemoto Oil & Fat Co., Ltd.), the mixture was adjusted to have the following weight ratio, followed by thorough stirring to dissolve it. The solution was then filtered through a 0.2 μm filter paper to prepare a water-soluble resin composit...

Embodiment 2

[0051] Embodiment 2 (preparation of water-soluble resin composition)

[0052]The procedure of Example 1 was repeated except that the crosslinking agent was changed to urea-formaldehyde-methanol polycondensate (trade name: Nikalac MX-290, produced by Sanwa Chemical Co.), and the mixing ratio of the composition was as follows. The mixture thus obtained was thoroughly stirred to be dissolved, and the solution was then filtered through a 0.2 μm filter paper to prepare a water-soluble resin composition B.

[0053] Table 2

[0054] Composition B weight ratio

[0055] Polyvinylpyrrolidone-co-polyvinylimidazole 7.0

[0056] Triethylamine p-toluenesulfonate 0.52

[0057] Urea-formaldehyde-methanol polycondensate 1.52

[0058] Polyoxyethylene alkyl ether 0.05

[0059] water 92.4

Embodiment 3

[0060] Embodiment 3 (preparation of water-soluble resin composition)

[0061] The steps of Example 1 were repeated, except that the crosslinking agent was changed to N, N'-dimethoxymethyltetrahydro-2-pyrimidinone (trade name: Nikalac N1951, produced by Sanwa Chemical Co.), and the composition The mixing ratio is as follows. The mixture thus obtained was thoroughly stirred to be dissolved, and the solution was then filtered through a 0.2 μm filter paper to prepare a water-soluble resin composition C.

[0062] table 3

[0063] Composition C weight ratio

[0064] Polyvinylpyrrolidone-co-polyvinylimidazole 7.0

[0065] Triethylamine p-toluenesulfonate 0.52

[0066] N,N'-Dimethoxymethyltetrahydro-2-pyrimidinone 1.52

[0067] Polyoxyethylene alkyl ether 0.05

[0068] water 92.4

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Abstract

A water-soluble resin composition for use in a pattern forming method involving applying a coating layer to a resist pattern formed by an ArF-responsive radiation-sensitive resin composition and expanding the width of the resist pattern so as to attain effective miniaturization of trench pattern and hole pattern, wherein the degree of dimensional shrinkage of resist pattern layer is increased over that of the prior art and wherein the dependence of rough / dense resist pattern on dimensional shrinkage degree is reduced; and a method of forming a pattern with the use of the water-soluble resin composition. There is provided a water-soluble resin composition for use in the above pattern forming method applicable to ArF excimer laser irradiation, comprising a water-soluble resin, a generator capable of generating an acid when heated, a surfactant, a crosslinking agent and a solvent containing water. Further, there is provided a method of forming a pattern with the use of the water-soluble resin composition.

Description

technical field [0001] The present invention relates to a method of forming a resist pattern, wherein, in the formation of a resist pattern in a production process such as a semiconductor, a covering layer is formed on the resist pattern by using a water-soluble resin composition, located on the resist pattern. Part of the protective layer near the resist pattern is cross-linked to form a modified protective layer insoluble in the developer on the resist pattern and cover the resist pattern, thereby effectively reducing the isolation size or hole of the resist pattern The hole opening size is below the limiting resolution. The present invention also relates to a water-soluble resin composition suitable for forming a protective layer. Background technique [0002] In a variety of fields including the production of semiconductors such as LSIs, the production of flat panel displays (FPDs) such as liquid crystal display (LCD) panels, and the manufacture of circuit boards for th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/40H01L21/027
CPCH01L21/0273G03F7/40Y10S430/162Y10S430/106Y10S430/11Y10S430/165Y10S430/115G03F7/11
Inventor 西部刚史洪圣恩高野祐辅冈安哲雄
Owner MERCK PATENT GMBH
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