Low-resistance n type semiconductor diamond and process for producing the same

Abstract

Concerns lithium-doped diamond: Low-resistivity n-type semiconductor diamond doped with lithium and nitrogen, and a method of manufacturing such diamond are provided. Low-resistivity n-type semiconductor diamond containing 1017 cm-3 or more of lithium atoms and nitrogen atoms together, in which are respectively doped lithium atoms into carbon-atom interstitial lattice sites, and nitrogen atoms into carbon-atom substitutional sites, with the lithium and the nitrogen holding arrangements that neighbor each other. To obtain low-resistivity n-type semiconductor diamond, in a method for the vapor synthesis of diamond, photodissociating source materials by photoexcitation utilizing vacuum ultraviolet light and irradiating a lithium source material with an excimer laser to scatter and supply lithium atoms enables the diamond to be produced.

Description

technical field [0001] The present invention relates to low-resistivity n-type semiconductor diamond doped with lithium and nitrogen, and also relates to a preparation method of the diamond. Specifically, lithium atoms are doped into the interstitial positions of carbon atoms in the single crystal diamond, nitrogen atoms are doped into the replacement positions of carbon atoms, and the dopants are kept adjacent to each other. The present invention then relates to the invention of a method for the preparation of low resistivity n-type semiconducting diamond by gas phase synthesis - by gas phase synthesis relying on photodissociated primary particles using vacuum ultraviolet light. Background technique [0002] Diamond has been used as a semiconductor material for some time, and research into its practical application as a basis for semiconductor devices is ongoing. [0003] In diamond, with an exceptionally large bandgap of 5.5 eV, there is no intrinsic gap—in which carrier ...

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Problems solved by technology

[0010] However, these methods have problems in that stable electrical characteristics cannot be achieved due to lithium moving around in the diamond; and, during the vapor deposition of diamond, lithium cannot be deposited due to bonding between lithium and simultaneously included hydrogen. electrical activation

A large amount of lithium and nitrogen end up being doped into the interstices of the diamond lattice, however, using this method, the concentration of lithium and nitrogen being incorporated is not easy to control

Another problem with nitrogen is that although it is doped into the lattice gap, it cannot be activated at all as an n-type dopant; a large amount of nitrogen doped in the lattice gap greatly reduces the properties of the n-type semiconductor, so that it cannot be obtained The sought-after nature of an n-type semiconductor with low resistivity

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