Flexible substrate, preparation method thereof, and display device

Abstract

The invention provides a flexible substrate, a preparation method thereof, a flexible display device, a preparation method thereof, a display substrate, and a display device in order to solve a problem that in a flexible device manufacture process in the prior art, laser energy has an adverse effect on the polycrystalline silicon active layer of a thin-film transistor and is liable to cause flexible layer carbonization in a flexible display device stripping process. The flexible substrate comprises an ultraviolet light absorption layer arranged between two flexible layers. When the active layer converts amorphous silicon into polycrystalline silicon by means of excimer laser irradiation, the flexible substrate with the sandwiched ultraviolet light absorption layer may absorb redundant laser energy by means of the ultraviolet light absorption layer in order to prevent the flexible layers from being heated and carbonized. When the flexible substrate and a glass substrate are separated, a stripping laser beam is injected from the glass substrate and the flexible substrate may absorb redundant laser energy by means of the ultraviolet light absorption layer in order to prevent the laser beam from having an adverse effect on the performance of the active layer.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to a flexible substrate and a preparation method thereof, a flexible display device and a preparation method thereof, a display substrate, a display panel, and a display device. Background technique [0002] The preparation method of flexible display devices is usually to coat a flexible substrate on a glass substrate, and then prepare low-temperature polysilicon thin-film transistors and light-emitting elements on the flexible substrate. The flexible device is separated from the glass substrate, and finally a flexible display device is obtained. [0003] In this process, the crystallization of low-temperature polysilicon is often carried out by excimer laser annealing (ELA). During the laser action, a-si absorbs laser energy, crystallizes, and becomes p-si, but some The laser energy will reach the flexible substrate and make it carbonized, for example, produce fine partic...

AI Technical Summary

Problems solved by technology

[0003] In this process, the crystallization of low-temperature polysilicon is often carried out by excimer laser annealing (ELA). During the laser action, a-si absorbs laser energy, crystallizes, and becomes p-si, but some The laser energy will reach the flexible substrate and make it carbonized, for example, produce fine particles, cracks, etc., which will make the functional layer of the subsequent process unable to be flattened, affecting the subsequent process

[0004] In addition, after the flexible display device is completed, the flexible display device is generally separated from the glass substrate by means of laser lift-off. Specifically, when the laser is incident on the side of the flexible display device away from the glass substrate, most of the energy irradiated by the laser is instantaneous. Absorbed by the flexible substrate, separation occurs between the flexible substrate and the glass substrate; but the instantaneous high heat will be transferred to the thin film transistor on the flexible substrate, which will affect the characteristics of the thin film transistor, for example, the threshold voltage of the thin film transistor will drift , the off-state current increases, and the switching ratio becomes larger, which deteriorates the characteristics of the thin film transistor and affects its driving ability

Images