Unlock instant, AI-driven research and patent intelligence for your innovation.

Atomic grade p-n node monocrystal rectifier and its application

An atomic-level, rectifier technology, applied in transistors, semiconductor devices, diodes, etc., can solve problems such as low thermal stability and difficult application of nanometer operations

Inactive Publication Date: 2008-01-09
冯守华
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The single-molecule rectification properties of acceptor-donor organic molecules have been reported in the literature, but the low thermal stability and cumbersome nano-manipulation of single organic molecules have brought great difficulties to in-depth research and further applications.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Atomic grade p-n node monocrystal rectifier and its application
  • Atomic grade p-n node monocrystal rectifier and its application
  • Atomic grade p-n node monocrystal rectifier and its application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Example 1 La 0.66 Ca 0.29 K 0.05 MnO 3 Single crystal preparation and characterization

[0026] 0.4M La(NO 3 ) 3 solution, 0.4M Ca(NO 3 ) 2 Solution, 0.12M KMnO 4 Solution, 0.56MMnCl 2 The solutions were mixed and KOH was added to form a reaction mixture. Stir the reaction mixture evenly and put it into a reaction kettle with a filling degree of 75%. After tightening it, put it in an oven at 260°C for crystallization for 3 days to obtain the composition La 0.66 Ca 0.29 K 0.05 MnO 3 single crystal. La 0.66 Ca 0.29 K 0.05 MnO 3 The average valence state of manganese is measured by iodometric method, and the experimental average valence state is 3.36, which is close to the theoretical value of 3.39. Using different amounts of KOH, a series of compounds La with K content varying from 0.01 to 0.14 can be obtained 1-x-y Ca x K y MnO 3 .

[0027] Given below is La 0.66 Ca 0.29 K 0.05 MnO 3 X-ray single crystal structure data.

[0028] Molecular for...

Embodiment 2 3

[0030] Example 2 Triple Valence Manganese Oxide Single Crystal Sample Work Function and I-V Curve Characteristics

[0031] The work function was measured with a Kelvin probe (produced in the UK, KP Technology Ltd) at room temperature and atmospheric conditions. The Kelvin probe is a vibrating capacitive device used to measure the work function between the sample and the vibrating needle (the work function of gold in the experiment is 5.1 eV). The sample powder was sprinkled horizontally on a clean aluminum sheet. In the test of current image tunneling spectrometer, 5×10 -5 Under the pressure of pa, 99.99% of the gold is thermally evaporated onto the treated silicon wafer to obtain a gold film. The single crystal sample was sprinkled on the gold film of the AFM stand (the schematic diagram is shown in Figure 5). The contact force between the gold probe and the gold film is kept at 2Nm -1 . The bias voltage used to measure the voltammetry curve between the gold film and the...

Embodiment 3

[0033] Example 3 Atomic level p-n junction single crystal diode

[0034] The single crystal rectifier as a stand-alone device has the application mode and accuracy in detector tube, rectifier tube, switching diode, low voltage diode and varactor diode, and its performance in fast photoelectric conversion. Atomic-scale three-dimensional p-n junction effects in quantum computer chips.

[0035] single crystal diode. Connect electrodes on both sides of the single crystal sample to obtain an atomic-level p-n junction single crystal diode, as shown in Figure 7. In FIG. 7, n and p represent the n-terminal and p-terminal shown in FIG. 3, respectively. m represents the number of knots.

[0036] Single Crystal Thin Film Diodes. The single crystal film refers to the SrTiO 3 , SiO 2 , Ta 2 o 5 As the substrate, a triple valence state manganese oxide single crystal film was prepared on such a substrate by applying a hydrothermal synthesis method, and the preparation method was the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

This invention relates to an atom level p-n junction monocrystal rectifier and its application, the composition of which is a triple valence state Mn oxide and the arrangement makes up of an atom level p-n junction, in which, the 1-V property of the monocrystal rectifier has the 1-V curve property of the monomolecular p-n junction and the monocrystal rectifier can be processed to a monocrystal diode, a triode and a monocrystal film diode.

Description

technical field [0001] The invention belongs to the technical field of materials and electronic devices, and particularly relates to the invention and application of atomic-level p-n junction single crystal tunnel diodes and triodes. Background technique [0002] In the past, the macro p-n junction of monocrystalline silicon was prepared by implanting impurity phosphorus (forming n region) and impurity gallium (forming p region) at both ends of monocrystalline silicon. We know that it is only useful for semiconductor crystals to form p-n junctions. Since the bandgap of silicon is 1.12eV, it can only effectively use the wavelength of about 0.4-1.1um. Obviously, optoelectronic devices with multi-junctions can use a wider range of wavelengths and operate more efficiently than single-junction devices. If the p-n junctions are connected in series, and the switching voltage of each junction is the same, then the switching voltage of the device is determined by the number of junct...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/88H01L29/72H01L29/12
Inventor 冯守华袁宏明施展
Owner 冯守华