Preparation method of amine silicon sheet monocrystalline silane-rare earth nanometer film on surface
An aminosilane and single-crystal silicon wafer technology is applied in the preparation of organic and single-crystal silicon wafer surface aminosilane-rare earth nano-films, and the preparation of inorganic rare-earth nanocomposite films. Low, anti-friction effect, simple process effect
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Embodiment 1
[0015] Firstly, pre-treat the single crystal silicon wafer whose surface is polished by nano-cerium oxide, soak the single crystal silicon wafer in aqua regia, heat the aqua regia in an electric furnace, heat it at 120°C for 5-6 hours, and let it cool naturally at room temperature After cooling for 7 to 8 hours, the monocrystalline silicon wafer was taken out, rinsed repeatedly with deionized water, and put into a drying dish for drying. Immerse the treated monocrystalline silicon wafer in the prepared aminosilane solution, let it stand for 12 hours, take it out, wash it with anhydrous methanol and deionized water respectively, dry it with nitrogen, and place it in the prepared rare earth self-assembly solution In , the assembly was carried out at 80° C. for 12 hours to obtain the aminosilane-rare earth self-assembled nanofilm.
[0016] The volume percentage of aminosilane in the aminosilane solution used in the present invention is 0.5%, and the solvent is anhydrous methanol....
Embodiment 2
[0022] Firstly, pre-treat the single crystal silicon wafer whose surface is polished by nano-cerium oxide, soak the single crystal silicon wafer in aqua regia, heat the aqua regia in an electric furnace, heat it at 120°C for 5-6 hours, and let it cool naturally at room temperature After cooling for 7 to 8 hours, the monocrystalline silicon wafer was taken out, rinsed repeatedly with deionized water, and put into a drying dish for drying. Immerse the treated monocrystalline silicon wafer in the prepared aminosilane solution, let it stand for 12 hours, take it out, wash it with anhydrous methanol and deionized water respectively, dry it with nitrogen, and place it in the prepared rare earth self-assembly solution In , the assembly was carried out at 80° C. for 12 hours to obtain the aminosilane-rare earth self-assembled nanofilm.
[0023] The volume percentage of aminosilane in the aminosilane solution used in the present invention is 1.5%, and the solvent is anhydrous methanol....
Embodiment 3
[0029] Firstly, pre-treat the single crystal silicon wafer whose surface is polished by nano-cerium oxide, soak the single crystal silicon wafer in aqua regia, heat the aqua regia in an electric furnace, heat it at 120°C for 5-6 hours, and let it cool naturally at room temperature After cooling for 7 to 8 hours, the monocrystalline silicon wafer was taken out, rinsed repeatedly with deionized water, and put into a drying dish for drying. Immerse the treated monocrystalline silicon wafer in the prepared aminosilane solution, let it stand for 12 hours, take it out, wash it with anhydrous methanol and deionized water respectively, dry it with nitrogen, and place it in the prepared rare earth self-assembly solution In , the assembly was carried out at 80° C. for 12 hours to obtain the aminosilane-rare earth self-assembled nanofilm.
[0030] The volume percentage of aminosilane in the aminosilane solution adopted in the present invention is 2%, and the solvent is anhydrous methanol...
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Abstract
Description
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Application Information
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