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101results about How to "Good anti-friction effect" patented technology

Preparation method of surface phosphate silane-CdSe composite film of monocrystalline silicon piece

The invention relates to a preparation method of a surface phosphate silane-CdSe composite film of a monocrystalline silicon piece, which comprises: firstly, a monocrystalline silicon piece is immersed in chloroazotic acid, taken out after being heated and naturally cooled, dried after being repeatedly rinsed by deionized water, and immersed into a prepared amino silane solution, and an amino silane film is formed on the surface of a basal piece; the basal piece is placed into a methane cyanide solution containing phosphorus oxychloride and 2,3,5-collidine to react for 20 minutes, the basal piece is rinsed by deionized water after being taken out, and the film basal piece with phosphate groups on the surface is obtained; and the basal piece is placed into CdSe suspending liquid, allowed tostand for 2 to 24 hours at 30 to 90 DEG C, rinsed by a large amount of deionized water after being taken out, and dried by the blowing of nitrogen, and thus the monocrystalline silicon piece with a CdSe composite film deposited on the surface is obtained. The invention has simple technology, low cost and no environmental pollution, and the prepared CdSe composite film has obvious function of friction reduction and excellent abrasion resistance and adhesion resistance properties.
Owner:SHANGHAI SECOND POLYTECHNIC UNIVERSITY

Surface pit texture subjected to edge profile modification and processing method thereof

The invention relates to a surface pit texture subjected to edge profile modification and a processing method thereof. The number of pits in an effective contact area of the surface texture is no less than 3, the diameter of each pit is not smaller than 30 micrometers, the depth of each pit is not smaller than 10 micrometers, the area duty ratio is 5-30%, the edges of the pits can be in continuous curved surface change through edge profile modification, i.e., relatively gentle curved surfaces inside the pits and relatively gentle curved surfaces outside the pits are connected, and no sharp edges exist. The method comprises the steps of selecting a base material; manufacturing pits; performing edge profile modification and cleaning. The surface pit texture subjected to edge profile modification can lower the aggressivity of the surface of the texture on a dual and is suitable for various working conditions, such as point contact, linear contact, surface contact, dry friction and boundary lubrication, and under the lubrication state, while lubricating liquid storage, impurity collection and granulating function are realized, a lubricating film can be facilitated to be formed since the edges of the pits subjected to profile modification in the contact area are in wedge contact, so that frictional wear is reduced.
Owner:SHANGHAI UNIV

Method for preparing Co3O4 composite film on surface of single crystal silicon chip and use thereof

The invention discloses a method for preparing a Co3O4 composite film on the surface of a single crystal silicon chip, comprising the steps of: putting the single crystal silicon chip into Pirahan solution to be processed at 90 DEG C for 1 hour; ultrasonically cleaning with deionized water; putting into a dustproof oven to be dried; dipping into cobalt nitrate solution and sodium hydroxide solution; leading the mixture and high-temperature and high-pressure water to flow into a reactor synchronously, wherein the reaction temperature is 300 DEG C; putting Co(NO3)2.6H2O into a beaker and addingwater solution for dissolving; magnetically stirring and adding polyethylene glycol solution and buffer solution with the PH value of 10; and adding H2O2 and stirring for 30 minutes. The method further comprises the steps of: filling the mixture into stainless steel high-pressure reaction kettle which is internally provided with polyfluortetraethylene and sealing the kettle, reacting at 200 DEG Cfor 20 minutes; centrifugally separating the reactant from the mixture; washing; and drying to obtain the single crystal silicon chip, the surface of which is attached with the Co3O4 film. The methodis used for the scale production of the module surfaces of the micro complex components, thereby improving abrasion-resistant performance.
Owner:SHANGHAI SECOND POLYTECHNIC UNIVERSITY

Method for producing bismuth vanadate compound film on glass substrate surface

The invention discloses a method for preparing a bismuth vanadate composite film on the surface of a glass substrate, which comprises the following steps that: a sulfonic silane film is prepared on the surface of a hydroxylated glass substrate by a self-assembly method, then the glass substrate is placed into a N, N-dimethylformamide bismuth vanadate dispersion liquid, and bismuth vanadate is deposited on the surface of the glass substrate. Firstly, the glass substrate is dipped into a Pirahan solution, treated for 1 hour at the temperature of 90 DEG C, cleaned and dried, then dipped into a mercapto silane solution, kept stand for 6 to 8 hours, then taken out for washing, blow-dried by nitrogen, and then placed into a nitric acid solution to obtain the glass substrate of which the surface is attached with the sulfonic silane film; and then the glass substrate is placed into a bismuth vanadate suspension, is kept stand for 4 to 20 hours at a temperature of between 20 and 80 DEG C, is taken out to be washed by a large amount of deionized water, and is blow-dried by nitrogen after the washing, thus the glass substrate of which the surface is deposited with a modified bismuth vanadate composite film is obtained. The method can reduce the friction coefficient from 0.8 (no film exists) to 0.1, and has obvious antifriction effect.
Owner:SHANGHAI SECOND POLYTECHNIC UNIVERSITY

Method for preparing TiO2 compound film on surface of glass substrate

The invention relates to a method for preparing a TiO2 composite film on a surface of a glass substrate. The method comprises the following steps: soaking the glass substrate in a solution containing H2SO4 and H2O2 according to volume ratio of 70 to 30, treating the glass substrate for 1 hour at a temperature of 90 DEG C, after cleaning and drying the glass substrate, soaking the glass substrate in a benzene solution containing hydrosulfuryl silane the concentration of which is between 0.1 and 2.0 mmol per liter, standing for 6 to 8 hours, taking out and washing the glass substrate, drying the glass substrate by blowing nitrogen, placing the glass substrate in 30-60 mass percent nitric acid, reacting for 1 hour at a temperature of between 50 and 80 DEG C, taking out and washing the glass substrate, and obtaining the glass substrate the surface of which is adhered with a sulfonic silane film; and placing the substrate in TiO2 suspension, standing for 4 to 20 hours at a temperature of between 20 and 80 DEG C; and taking out and washing the glass substrate by a large amount of deionized water, drying the washed glass substrate by blowing the nitrogen, and obtaining the glass substrate the surface of which is deposited with a modified TiO2 composite film. The method has short film forming period, can reduce frictional coefficient from 0.8 to 0.1 without a film, and has quite remarkable antifriction function.
Owner:SHANGHAI SECOND POLYTECHNIC UNIVERSITY
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