Method for preparing sulfonic silane-rare earth nanometer compound membrane on single crystal silicon sheet surface

A technology of sulfonic acid silane and single crystal silicon wafer, which is applied in the direction of metal material coating process, etc., can solve the problems of long film forming cycle, and achieve the effect of low cost, uniform distribution and dense film forming

Inactive Publication Date: 2005-09-21
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method requires 24 to 96 hours to prepare the precursor solution in the process of preparing the self-assembled film, which makes the entire film formation cycle too long, and does not involve specific methods in the process of substrate processing, and the method It is to prepare an organic self-assembled film, which does not involve the improvement and research of rare earth elements on the properties of the film

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] First, pre-treat the monocrystalline silicon wafers, soak the monocrystalline silicon wafers in aqua regia, heat the aqua regia in an electric furnace for 5 hours, cool naturally at room temperature, take out the monocrystalline silicon wafers, and use a deionized Rinse repeatedly with water and dry in a desiccator. Then the monocrystalline silicon chip after the treatment is immersed in the prepared mercaptosilane solution, and left to stand for 6 hours, the component molar concentration of the mercaptosilane solution is: 3-mercaptopropylmethyldimethoxysilane 0.5mmol / L, The solvent is benzene solution; after taking it out, wash it with chloroform, acetone, and deionized water to remove the organic matter physically adsorbed on the surface, blow it dry with nitrogen, and place it in a nitric acid solution with a mass concentration of 30% for 2 hours at 50°C. Rinse with a large amount of deionized water, so that the terminal sulfhydryl groups are oxidized into sulfonic a...

Embodiment 2

[0019] First, pre-treat the monocrystalline silicon wafer, soak the monocrystalline silicon wafer in aqua regia, heat the aqua regia in an electric furnace for 6 hours, and cool it naturally at room temperature, take out the monocrystalline silicon wafer, and use a deionized Rinse repeatedly with water and dry in a desiccator. Then the monocrystalline silicon chip after the treatment is immersed in the prepared mercaptosilane solution, and left to stand for 8 hours, the component molar concentration of the mercaptosilane solution is: 3-mercaptopropylmethyldimethoxysilane 0.1mmol / L, The solvent is benzene solution; after taking it out, wash it with chloroform, acetone, and deionized water to remove the organic matter physically adsorbed on the surface, blow it dry with nitrogen, place it in a nitric acid solution with a mass concentration of 40%, and react it at 65°C for 2 hours. Rinse with a large amount of deionized water, so that the terminal sulfhydryl groups are oxidized i...

Embodiment 3

[0024] First, pre-treat the monocrystalline silicon wafers, soak the monocrystalline silicon wafers in aqua regia, heat the aqua regia in an electric furnace for 5 hours, cool naturally at room temperature, take out the monocrystalline silicon wafers, and use a deionized Rinse repeatedly with water and dry in a desiccator. Then immerse the treated monocrystalline silicon chip in the prepared mercaptosilane solution and let it stand for 7 hours. solution; after taking it out, wash it with acetone, chloroform, and deionized water to remove the organic matter physically adsorbed on the surface, blow it dry with nitrogen, and place it in a nitric acid solution with a mass concentration of 60% at 80°C for 2 hours. Take it out with a large amount of deionized water Rinse with deionized water, so that the terminal sulfhydryl groups are oxidized into sulfonic acid groups in situ. Then put the substrate with the sulfonic acid silane film on the surface into the prepared rare earth sel...

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Abstract

A method is for making sulfonic acid radical silicane-tombarthitenanometer coextruded film on the surface of a monocryst a self-assemblage process on the surface to make said film, which comprises the following steps: putting the monocrystalline silicon chip into aqua regia to heating it for 5-6 hours, cooling it at the room temperature, washing and drying it, and immersing it into the mercaptosilicane solution for 6-8 hours, after the flush process, weathering it with nitrogen, then putting it into the aquacare to reacting, for oxygenating the end mercapto group to sulfonic group, and adding the chip into the tombarthite self-assemblage solution with tombarthite compound, ethanol, ethylene diamine tetraacetic acid, chlor ammonia, aquacare and aquacare to assemble, and then getting the sulfonic acid radical silicane-tombarthite self-assemblage nanometer coextruded film. The invention provides an easy technique, and the tombarthite self-assemblage film made on the surface of the monocrystalline silicon chip can lower friction and improve wear-resistance dramatically.

Description

technical field [0001] The invention relates to a method for preparing a rare earth nanocomposite film, in particular to a method for preparing a sulfonic acid silane-rare earth self-assembled nanocomposite film on the surface of a single crystal silicon substrate. It belongs to the field of film preparation. Background technique [0002] With the advancement of high technology, the machinery manufacturing industry is developing in the direction of miniaturization, which involves the tribological problems of the surface of micro-machines. Due to the advantages of high hardness, low cost and small surface roughness of silicon material, the application in MEMS has been paid more and more attention. However, silicon materials without surface treatment are highly brittle, and surface cracks are prone to delamination wear and brittle fracture under low tensile stress, which is difficult to meet the requirements of use. Therefore, surface modification technology is required to im...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C22/02C23C22/78
Inventor 程先华白涛吴炬王梁
Owner SHANGHAI JIAO TONG UNIV
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