Method for preparing Co3O4 composite film on surface of single crystal silicon chip and use thereof

A composite film, silicon substrate technology, applied in solid-state chemical plating, metal material coating process, coating and other directions, can solve the problems of high brittleness, low life, low strength, etc., to prolong the service life and enhance the wear resistance. performance, the effect of good anti-wear properties

Inactive Publication Date: 2010-03-10
SHANGHAI SECOND POLYTECHNIC UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention discloses a method for preparing Co on the surface of a single crystal silicon substrate. 3 o 4 The method of composite film is used for the large-scale production of micro-complex components on the surface of the mold to enhance the anti-wear performance of the mold surface and overcome the defects of high brittleness, low strength and low life in the processing of deep etching technology in the prior art. The accuracy and complexity of the mold cavity greatly prolong the service life of the mold, especially for the large-scale application of micro-injection molding technology.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] First, the monocrystalline silicon substrate is treated with hydroxylation, and the treatment method is to treat it with Pirahan solution at 90° C. for 1 hour, and the solution H 2 SO 4 with H 2 o 2 The volume ratio is = 70:30. After ultrasonic cleaning with deionized water, put it in a dust-proof device and dry it in an oven. There is no special requirement for the drying temperature. The hydroxylation of the single crystal silicon substrate processed under such time and temperature is very complete and the single crystal silicon substrate is very flat and not corroded. Then immerse the treated monocrystalline silicon substrate into cobalt nitrate solution and sodium hydroxide solution, then the mixed solution and high-temperature and high-pressure water flow into the reaction vessel in parallel, the reaction temperature is 300°C, and 0.015mol of Co(NO 3 ) 2 ·6H 2 O, put it in a beaker, add a small amount of water to dissolve, and add polyethylene glycol solution ...

Embodiment 2

[0020] First, the monocrystalline silicon substrate is treated with hydroxylation, and the treatment method is to treat it with Pirahan solution at 90° C. for 1 hour, and the solution H 2 SO 4 with H 2 o 2 The volume ratio is = 70:30. After ultrasonic cleaning with deionized water, put it in a dust-proof device and dry it in an oven. There is no special requirement for the drying temperature. The hydroxylation of the single crystal silicon substrate processed under such time and temperature is very complete and the single crystal silicon substrate is very flat and not corroded. Then immerse the treated monocrystalline silicon substrate into cobalt nitrate solution and sodium hydroxide solution, then the mixed solution and high-temperature and high-pressure water flow into the reaction vessel in parallel, the reaction temperature is 300°C, and 0.018mol of Co(NO 3 ) 2 ·6H 2 O, put it in a beaker, add a small amount of water to dissolve, and add polyethylene glycol solution ...

Embodiment 3

[0023] First, the monocrystalline silicon substrate is treated with hydroxylation, and the treatment method is to treat it with Pirahan solution at 90° C. for 1 hour, and the solution H 2 SO 4 with H 2 o 2 The volume ratio is = 70:30. After ultrasonic cleaning with deionized water, put it in a dust-proof device and dry it in an oven. There is no special requirement for the drying temperature. The hydroxylation of the single crystal silicon substrate processed under such time and temperature is very complete and the single crystal silicon substrate is very flat and not corroded. Then immerse the treated monocrystalline silicon substrate into cobalt nitrate solution and sodium hydroxide solution, then the mixed solution and high-temperature and high-pressure water flow into the reaction vessel in parallel, the reaction temperature is 300°C, and 0.015mol of Co(NO 3 ) 2 ·6H 2 O, put it in a beaker, add a small amount of water to dissolve, and add polyethylene glycol solution ...

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Abstract

The invention discloses a method for preparing a Co3O4 composite film on the surface of a single crystal silicon chip, comprising the steps of: putting the single crystal silicon chip into Pirahan solution to be processed at 90 DEG C for 1 hour; ultrasonically cleaning with deionized water; putting into a dustproof oven to be dried; dipping into cobalt nitrate solution and sodium hydroxide solution; leading the mixture and high-temperature and high-pressure water to flow into a reactor synchronously, wherein the reaction temperature is 300 DEG C; putting Co(NO3)2.6H2O into a beaker and addingwater solution for dissolving; magnetically stirring and adding polyethylene glycol solution and buffer solution with the PH value of 10; and adding H2O2 and stirring for 30 minutes. The method further comprises the steps of: filling the mixture into stainless steel high-pressure reaction kettle which is internally provided with polyfluortetraethylene and sealing the kettle, reacting at 200 DEG Cfor 20 minutes; centrifugally separating the reactant from the mixture; washing; and drying to obtain the single crystal silicon chip, the surface of which is attached with the Co3O4 film. The methodis used for the scale production of the module surfaces of the micro complex components, thereby improving abrasion-resistant performance.

Description

technical field [0001] The invention relates to a method for preparing Co on the surface of a single crystal silicon substrate. 3 o 4 The method of composite film is used for the large-scale production of micro-complex components on the surface of the mold to enhance the anti-wear performance. Background technique [0002] The rapid development of microsystem technology has put forward increasingly urgent requirements for the large-scale production of micro-complex components. Micro-injection molding technology is the most potential preparation technology for mass-production of micro-components developed in recent years. At present, the molds for micro-injection molding are all Using single crystal silicon wafer as the base material, it is processed by deep etching technology, which has high brittleness, low strength and low service life. [0003] Co with spinel structure 3 o 4 , the size and shape of its particles have a significant impact on its physical and chemical p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C20/08
Inventor 李健
Owner SHANGHAI SECOND POLYTECHNIC UNIVERSITY
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