Process for preparing single crystal silicon substrate surface self-assembly rare earth nano-film

A single crystal silicon wafer, self-assembly technology, applied in liquid chemical plating, metal material coating process, solid-state chemical plating and other directions, can solve the problem of long film forming cycle, achieve low cost, obvious effect, film forming dense effect

Inactive Publication Date: 2004-11-10
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method requires 24-96 hours to prepare the precursor solution in the process of preparing the self-assembled film, which makes the entire film-forming cycle too long, and does not involve specific methods in

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0011] First, pretreat the monocrystalline silicon wafer, soak the monocrystalline silicon wafer in aqua regia, heat the aqua regia in an electric furnace for 5 hours, and cool it naturally at room temperature for 8 hours, take out the monocrystalline silicon wafer, and use Rinse repeatedly with deionized water and dry in a desiccator.

[0012] Immerse the treated single crystal silicon wafer in the prepared rare earth modifier and let it stand for 8 hours. After taking it out, rinse it with deionized water, dry it at room temperature, place it in an oven, and keep it warm at 120 degrees Celsius for 1 hour to obtain the rare earth self-assembled nano film.

[0013] The component weight percent of the rare earth modifier that the present invention adopts is:

[0014] Ethanol content: 65%, rare earth compounds: 5%, ethylenediaminetetraacetic acid: 4%, ammonium chloride: 5%, urea: 25%, concentrated hydrochloric acid: 1%.

[0015] SPM-9500 atomic force microscope, L116E ellipsom...

Embodiment 2

[0018] First, pretreat the monocrystalline silicon wafer, soak the monocrystalline silicon wafer in aqua regia, heat the aqua regia in an electric furnace for about 6 hours, and naturally cool it at room temperature for about 7 hours, then take out the monocrystalline silicon wafer , rinsed repeatedly with deionized water, and dried in a desiccator.

[0019] Immerse the treated single crystal silicon wafer in the prepared rare earth modifier and let it stand for 8 hours. After taking it out, rinse it with deionized water, dry it at room temperature, place it in an oven, and keep it warm at 120 degrees Celsius for 1 hour to obtain the rare earth self-assembled nano film.

[0020] The component weight percent of the rare earth modifier that the present invention adopts is:

[0021] Ethanol content: 83%, rare earth compounds: 3.5%, ethylenediaminetetraacetic acid: 1%, ammonium chloride: 2%, urea: 10%, concentrated hydrochloric acid: 0.5%.

[0022] The characterization means in ...

Embodiment 3

[0025] Firstly, pretreat the monocrystalline silicon wafer, soak the monocrystalline silicon wafer in aqua regia, heat the aqua regia with an electric furnace for about 5 hours, and naturally cool it at room temperature for about 7 to 8 hours. The slices were taken out, rinsed repeatedly with deionized water, and placed in a desiccator to dry.

[0026] Immerse the treated single crystal silicon wafer in the prepared rare earth modifier and let it stand for 8 hours. After being taken out, rinsed with deionized water, dried at room temperature, placed in an oven, and kept at 120° C. for 1 hour, the rare earth self-assembled nano film was obtained.

[0027] The component weight percent of the rare earth modifier that the present invention adopts is:

[0028] Ethanol content: 70%, rare earth compounds: 5%, ethylenediaminetetraacetic acid: 4%, ammonium chloride: 5%, urea: 15%, concentrated hydrochloric acid: 1%.

[0029] Adopt the experimental instrument in the embodiment 1 to ev...

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Abstract

The invention is an on-monocrystalline silicon rare-earth nano-film self-composing preparing method, firstly preprocessing monocrystalline silicon slice, then dipping it in prepared rare-earth modifier, placing for 8 hours, take it out and wash by deionized water, airing it at room temperature and then placing in an oven, preserving heat at 120 deg.C for 1 hour, and obtaining the rare-earth self-composing film; where, the components of the rare-earth modifier in weight percent: rare-earth compound 3.5%-7%, alcohol 65%-85%, ethylene diamine tetra acetic acid 1%-4%, ammonium chloride 2%-5%, urea 10%-25%, and thick HCl 0.5%-1.5%. It has simple process, low cost, no environmental pollution, uniformly distributed rare-earth nano film, compact film formation, and obvious frication reducing action. Besides, the self-composing film has good wearability.

Description

technical field [0001] The invention relates to a preparation method of a nano film, in particular to a preparation method of a self-assembled rare earth nano film on the surface of a single crystal silicon substrate. It belongs to the field of film preparation. Background technique [0002] With the advancement of high technology, the machinery manufacturing industry is developing in the direction of miniaturization, which involves the tribological problems of the surface of micro-machines. At present, self-assembled films can be prepared on the surface of single crystal substrates by self-assembly method to improve the anti-friction and anti-friction properties of rare earth surfaces. Self-assembled membranes are a two-dimensional molecular system formed mainly by chemisorption by immersing a suitable substrate in a solution containing a surfactant. The self-assembled film has a compact structure, high stability, and a high degree of order and orientation. Self-assemble...

Claims

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Application Information

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IPC IPC(8): C23C18/02C23C20/08
Inventor 程先华吴炬白涛上官倩芡
Owner SHANGHAI JIAO TONG UNIV
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