Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Process for preparing single crystal silicon substrate surface self-assembly rare earth nano-film

A single crystal silicon wafer, self-assembly technology, applied in liquid chemical plating, metal material coating process, solid-state chemical plating and other directions, can solve the problem of long film forming cycle, achieve low cost, obvious effect, film forming dense effect

Inactive Publication Date: 2004-11-10
SHANGHAI JIAO TONG UNIV
View PDF1 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method requires 24-96 hours to prepare the precursor solution in the process of preparing the self-assembled film, which makes the entire film-forming cycle too long, and does not involve specific methods in the process of substrate processing, and this method is Prepared an organic self-assembled thin film, which did not involve the improvement and research of rare earth elements on the performance of the thin film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0011] First, pretreat the monocrystalline silicon wafer, soak the monocrystalline silicon wafer in aqua regia, heat the aqua regia in an electric furnace for 5 hours, and cool it naturally at room temperature for 8 hours, take out the monocrystalline silicon wafer, and use Rinse repeatedly with deionized water and dry in a desiccator.

[0012] Immerse the treated single crystal silicon wafer in the prepared rare earth modifier and let it stand for 8 hours. After taking it out, rinse it with deionized water, dry it at room temperature, place it in an oven, and keep it warm at 120 degrees Celsius for 1 hour to obtain the rare earth self-assembled nano film.

[0013] The component weight percent of the rare earth modifier that the present invention adopts is:

[0014] Ethanol content: 65%, rare earth compounds: 5%, ethylenediaminetetraacetic acid: 4%, ammonium chloride: 5%, urea: 25%, concentrated hydrochloric acid: 1%.

[0015] SPM-9500 atomic force microscope, L116E ellipsom...

Embodiment 2

[0018] First, pretreat the monocrystalline silicon wafer, soak the monocrystalline silicon wafer in aqua regia, heat the aqua regia in an electric furnace for about 6 hours, and naturally cool it at room temperature for about 7 hours, then take out the monocrystalline silicon wafer , rinsed repeatedly with deionized water, and dried in a desiccator.

[0019] Immerse the treated single crystal silicon wafer in the prepared rare earth modifier and let it stand for 8 hours. After taking it out, rinse it with deionized water, dry it at room temperature, place it in an oven, and keep it warm at 120 degrees Celsius for 1 hour to obtain the rare earth self-assembled nano film.

[0020] The component weight percent of the rare earth modifier that the present invention adopts is:

[0021] Ethanol content: 83%, rare earth compounds: 3.5%, ethylenediaminetetraacetic acid: 1%, ammonium chloride: 2%, urea: 10%, concentrated hydrochloric acid: 0.5%.

[0022] The characterization means in ...

Embodiment 3

[0025] Firstly, pretreat the monocrystalline silicon wafer, soak the monocrystalline silicon wafer in aqua regia, heat the aqua regia with an electric furnace for about 5 hours, and naturally cool it at room temperature for about 7 to 8 hours. The slices were taken out, rinsed repeatedly with deionized water, and placed in a desiccator to dry.

[0026] Immerse the treated single crystal silicon wafer in the prepared rare earth modifier and let it stand for 8 hours. After being taken out, rinsed with deionized water, dried at room temperature, placed in an oven, and kept at 120° C. for 1 hour, the rare earth self-assembled nano film was obtained.

[0027] The component weight percent of the rare earth modifier that the present invention adopts is:

[0028] Ethanol content: 70%, rare earth compounds: 5%, ethylenediaminetetraacetic acid: 4%, ammonium chloride: 5%, urea: 15%, concentrated hydrochloric acid: 1%.

[0029] Adopt the experimental instrument in the embodiment 1 to ev...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Film thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention is an on-monocrystalline silicon rare-earth nano-film self-composing preparing method, firstly preprocessing monocrystalline silicon slice, then dipping it in prepared rare-earth modifier, placing for 8 hours, take it out and wash by deionized water, airing it at room temperature and then placing in an oven, preserving heat at 120 deg.C for 1 hour, and obtaining the rare-earth self-composing film; where, the components of the rare-earth modifier in weight percent: rare-earth compound 3.5%-7%, alcohol 65%-85%, ethylene diamine tetra acetic acid 1%-4%, ammonium chloride 2%-5%, urea 10%-25%, and thick HCl 0.5%-1.5%. It has simple process, low cost, no environmental pollution, uniformly distributed rare-earth nano film, compact film formation, and obvious frication reducing action. Besides, the self-composing film has good wearability.

Description

technical field [0001] The invention relates to a preparation method of a nano film, in particular to a preparation method of a self-assembled rare earth nano film on the surface of a single crystal silicon substrate. It belongs to the field of film preparation. Background technique [0002] With the advancement of high technology, the machinery manufacturing industry is developing in the direction of miniaturization, which involves the tribological problems of the surface of micro-machines. At present, self-assembled films can be prepared on the surface of single crystal substrates by self-assembly method to improve the anti-friction and anti-friction properties of rare earth surfaces. Self-assembled membranes are a two-dimensional molecular system formed mainly by chemisorption by immersing a suitable substrate in a solution containing a surfactant. The self-assembled film has a compact structure, high stability, and a high degree of order and orientation. Self-assemble...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C18/02C23C20/08
Inventor 程先华吴炬白涛上官倩芡
Owner SHANGHAI JIAO TONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com