Method for producing compound thin film of phosphoric acid radicle silane-carbon nanotubes on the surface of single crystal silicon wafers

A technology of carbon nanotube composite and phosphate-based silane, which is applied in the direction of surface coating liquid devices, special surfaces, chemical instruments and methods, etc., can solve the cumbersome process conditions of self-assembled films, long heat treatment time, and no Improvement and research on the performance of carbon nanotube films, etc., to achieve the effects of low cost, simple configuration, and friction reduction

Inactive Publication Date: 2007-09-19
ZHEJIANG QIXIN NEW ENERGY TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The process conditions of the self-assembled film prepared by this method are relatively cumbersome, and the heat treatment time is also long, and it does not involve the improvement and research of carbon nanotubes on the properties of the film.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Carbon nanotubes: single-walled carbon nanotubes, double-walled carbon nanotubes and multi-walled carbon nanotubes produced by Shenzhen Nano Harbor Co., Ltd.

[0019] Pre-treat the monocrystalline silicon wafer first, soak the monocrystalline silicon wafer in aqua regia, heat the aqua regia in an electric furnace, heat at 120°C for 5-6 hours, and naturally cool it at room temperature for 7-8 hours. The silicon wafers were taken out, rinsed repeatedly with deionized water, and dried in a drying dish. Immerse the treated monocrystalline silicon wafer in the prepared aminosilane solution, let it stand for 12 hours, take it out, rinse it with anhydrous methanol and deionized water, dry it with nitrogen, and place it in a solution containing phosphorus oxychloride and 2, 3,5-collidine was reacted in a cyanide solution for 20 minutes, and after taking it out, it was washed with a large amount of deionized water to obtain a film substrate with phosphoric acid groups assembled ...

Embodiment 2

[0027] Carbon nanotubes: single-walled carbon nanotubes, double-walled carbon nanotubes and multi-walled carbon nanotubes produced by Shenzhen Nano Harbor Co., Ltd.

[0028] First pre-treat the monocrystalline silicon wafer, soak the monocrystalline silicon wafer in aqua regia, heat the aqua regia with an electric furnace, heat at 120°C for 5 to 6 hours, and naturally cool it at room temperature for 7 to 8 hours. The silicon wafers were taken out, rinsed repeatedly with deionized water, and dried in a drying dish. Immerse the treated monocrystalline silicon wafer in the prepared aminosilane solution, let it stand for 12 hours, wash it with anhydrous methanol and deionized water after taking it out, dry it with nitrogen, and place it in a solution containing phosphorus oxychloride and 2 , 3,5-collidine in a cyanide solution for 20 minutes, and after taking it out, wash it with a large amount of deionized water to obtain a film substrate with phosphoric acid groups assembled on ...

Embodiment 3

[0036] Carbon nanotubes: single-walled carbon nanotubes, double-walled carbon nanotubes and multi-walled carbon nanotubes produced by Shenzhen Nano Harbor Co., Ltd.

[0037] Pre-treat the monocrystalline silicon wafer first, soak the monocrystalline silicon wafer in aqua regia, heat the aqua regia in an electric furnace, heat at 120°C for 5-6 hours, and naturally cool it at room temperature for 7-8 hours. The silicon wafers were taken out, rinsed repeatedly with deionized water, and dried in a drying dish. Immerse the treated monocrystalline silicon wafer in the prepared aminosilane solution, let it stand for 12 hours, wash it with anhydrous methanol and deionized water after taking it out, dry it with nitrogen, and place it in a solution containing phosphorus oxychloride and 2 , 3,5-collidine in cyanide solution for 20 minutes, take it out and rinse it with a large amount of deionized water to obtain a film substrate with phosphoric acid groups assembled on its surface.

[0...

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PUM

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Abstract

The invention relates to a preparation method for the monocrystalline silicon slice surface phospho silicane-carbon nanomater tube composite membrane, firstly dipping the monocrystalline silicon slice in the water, after being heated and cooled naturally to take out, repeatedly flushing using the deionized water and then drying, and then dipping into the well prepared amino silane solution, assembling the amino silane film on the surface of the substrate, then putting into the cyanidation methane solution containing the phosphorus oxychloride and the 2,3,5-trimethyl pyridine. The phospho group is assembled on the film surface, then the substrate is inputted in the modified carbon nanomater tube suspension liquid, for standing 2-24 hours in 30-90 DEG, then taking out to flush using plenty of deionized water, and drying using nitrogen gas, thereby obtaining an improved monocrystalline silicon slice of the carbon nanomater tube composite membrane deposited on the surface. The invention has simple technology, low cost, no pollution to the environment, and the carbon nanomater tube composite membrane has evident anti friction function and good resistance to wear.

Description

technical field [0001] The invention relates to a method for preparing a carbon nanotube composite film, in particular to a method for preparing a phosphate-based silane-rare earth modified carbon nanotube composite film on the surface of a single crystal silicon wafer. It belongs to the field of film preparation. Background technique [0002] With the advancement of high technology, the machinery manufacturing industry is developing in the direction of miniaturization, which involves the tribological problems of the surface of micro-machines. Due to the advantages of high hardness, low cost and small surface roughness of silicon material, the application in MEMS has been paid more and more attention. However, silicon materials without surface treatment are highly brittle, and surface cracks are prone to delamination wear and brittle fracture under low tensile stress, which is difficult to meet the requirements of use. Therefore, surface modification technology is required ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B05D5/08B05D1/18B05C19/00B81C5/00B81C99/00
Inventor 程先华亓永李键顾勤林
Owner ZHEJIANG QIXIN NEW ENERGY TECH
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