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LED with hot channel bonding layer

A technology of light-emitting diodes and adhesive layers, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of small thermal conductivity, poor heat dissipation, and inability to fully utilize the heat dissipation characteristics of high thermal conductivity substrates

Active Publication Date: 2008-01-30
EPISTAR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the above invention patent, the epitaxial layer is grown on the light-absorbing first substrate, and then the epitaxial layer is connected to the second substrate with high thermal conductivity by using an adhesive layer, and then the light-absorbing first substrate is removed to reduce thermal resistance, increase heat dissipation, and increase light emission. efficiency; however, because the thermal resistance of the light-emitting diode structure is equivalent to the sum of the thermal resistance of the epitaxial layer, the thermal resistance of the soft dielectric bonding layer and the thermal resistance of the second substrate with high thermal conductivity, among them, the soft dielectric of the polymer material The thermal conductivity of the electrical bonding layer is between 0.1W / mk and 0.3W / mk, and the thermal conductivity is very small. As a result, the light-emitting diode element still cannot fully utilize the heat dissipation characteristics of the high thermal conductivity substrate, and has the disadvantage of poor heat dissipation.

Method used

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  • LED with hot channel bonding layer
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Embodiment 1

[0022] Please refer to FIG. 1 , according to a preferred embodiment of the present invention, a light-emitting diode with a thermal channel adhesive layer includes a high heat dissipation substrate 11, an adhesive layer 13 with a bump thermal channel 12 formed on the high heat dissipation substrate, wherein, The bump penetrates or partially penetrates the adhesive layer to form a thermal channel, a reflective layer 14 formed on the adhesive layer with a bump thermal channel, an insulating layer 15 formed on the reflective layer, and an insulating layer formed on the insulating layer. A transparent conductive layer 16 on the layer, wherein the upper surface of the transparent conductive layer includes a first surface area and a second surface area, a first contact layer 17 formed on the first surface area, formed on the A first confinement layer 18 on the first contact layer, a light-emitting layer 19 formed on the first confinement layer, a second confinement layer 20 formed on...

Embodiment 2

[0024] Please refer to FIG. 2 , according to another preferred embodiment of the present invention, a bonded light-emitting diode with thermal channels includes a high heat dissipation substrate 10 with bump thermal channels, and an insulating layer formed on the high heat dissipation substrate with bump thermal channels 111. An adhesive layer 13 formed on the insulating layer, through which the insulating layer penetrates or partially penetrates the adhesive layer, a transparent conductive layer 16 formed on the insulating layer and the adhesive layer, wherein the transparent conductive layer The upper surface of the upper surface comprises a first surface area and a second surface area, a first contact layer 17 formed on the first surface area, a first confinement layer 18 formed on the first contact layer, formed A light emitting layer 19 on the first binding layer, a second binding layer 20 formed on the light emitting layer, a second contact layer 21 formed on the second b...

Embodiment 3

[0026] Please refer to FIG. 3 , according to another preferred embodiment of the present invention, there is a bonded light-emitting diode array with thermal channels, which is similar to the first preferred embodiment in FIG. Surface area and a plurality of second surface areas, a plurality of transparent conductive layers 16 formed on the plurality of first surface areas of the insulating layer, the plurality of transparent conductive layers have a plurality of first surface areas and a plurality of second A surface area, a plurality of LED stacks formed on the plurality of first surface areas of the plurality of transparent conductive layers, the LED stack sequentially includes a first contact layer 17, a first binding layer 18, a light emitting layer 19, a first Two binding layers 20, a second contact layer 21, an insulating layer 112 formed on the second surface area of ​​the insulating layer and between LED stacks, and an insulating layer 112 formed on the second surface ...

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Abstract

The LED with thermal channel adhesive layer is characterized in that, forming metal bulge on adhesive layer that combines base plate and LED stack, or the semiconductor bulge penetrates adhesive layer, both to form heat dispersion channel to increase heat dispersion effect and improve stability and efficiency; wherein, the said LED at least comprises a said plate, a insulating layer, a LED stack formed on insulating layer, and a said adhesive layer.

Description

technical field [0001] The invention relates to a light-emitting diode with an adhesive layer, in particular to a light-emitting diode with a thermal channel adhesive layer. Background technique [0002] Light-emitting diodes are widely used, for example, in optical display devices, traffic signs, data storage devices, communication devices, lighting devices, and medical devices. How to improve the brightness of light-emitting diodes is an important issue in the manufacture of light-emitting diodes. [0003] Invention No. 550834 of Taiwan Patent Announcement discloses a light-emitting diode structure and its manufacturing method. A light-emitting diode epitaxial structure is grown on a light-absorbing first substrate, and then a soft dielectric bonding layer of a polymer material is used to bond The epitaxial surface of the light-emitting diode is bonded with a second substrate with high thermal conductivity to increase the cooling effect of the chip and increase the lumino...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/64
Inventor 谢明勋
Owner EPISTAR CORP