Lateral junction field-effect transistor and its manufacturing method
A field effect transistor, bonding technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of reduced ON resistance, limited expansion range of spacing, and limited expansion range, and achieves reduced ON resistance. Effect
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no. 1 Embodiment approach
[0180] (Structure of Horizontal Junction Field Effect Transistor 100)
[0181] Next, referring to FIG. 1 , the structure of a lateral junction field effect transistor 100 according to a first embodiment of the present invention will be described.
[0182] The structural feature of the horizontal junction field effect transistor 100 in the first embodiment of the present invention is that the pn junction and the gate electrode layer are vertically arranged. In this specification, the longitudinal direction means the direction along the depth of the substrate, and the lateral side means the direction parallel to the main surface of the substrate.
[0183] The horizontal junction field effect transistor 100 is provided with a first semiconductor layer 11 containing p-type impurities on a semiconductor substrate 2 made of Si or the like; on the first semiconductor layer 11, the concentration of n-type impurities is higher than The second semiconductor layer 12 of the impurity con...
no. 2 Embodiment approach
[0202] (Structure of Horizontal Junction Field Effect Transistor 200)
[0203] Next, referring to FIG. 8, the structure of the lateral junction field effect transistor 200 in the second embodiment will be described.
[0204] The structural feature of the horizontal junction field effect transistor 200 in the present embodiment is that the pn junction and the gate electrode layer are vertically arranged like the horizontal junction field effect transistor 100 .
[0205] The horizontal junction field effect transistor 200 is provided with a first semiconductor layer 21 containing p-type impurities on a semiconductor substrate 2 made of Si or the like; on the first semiconductor layer 21, the concentration of n-type impurities containing The second semiconductor layer 22 of the impurity concentration of the first semiconductor layer 21; the third semiconductor layer 23 on the second semiconductor layer 22 containing p-type impurities; the third semiconductor layer 23 on the third...
no. 3 Embodiment approach
[0229] (Structure of Horizontal Junction Field Effect Transistor 300)
[0230] Next, referring to FIG. 17 , the structure of the lateral junction field effect transistor 300 in the third embodiment will be described.
[0231] The structural feature of the horizontal junction field effect transistor 300 in this embodiment is that the pn junction and the gate electrode layer are vertically arranged as in the horizontal junction field effect transistor 100 .
[0232]The horizontal junction field effect transistor 300 is provided with a first semiconductor layer 31 containing p-type impurities on a semiconductor substrate 2 made of Si or the like; on the first semiconductor layer 31, the concentration of n-type impurities containing The second semiconductor layer 32 of the impurity concentration of the first semiconductor layer 31; the third semiconductor layer 33 on the second semiconductor layer 32 containing p-type impurities; the third semiconductor layer 33 on the third semic...
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