Method for cutting of inverted mounting LED

Abstract

The invention relates to a method for scribing an inverted light emitting diode, including the concrete steps of: taking and fixing blue film on a fixed ring, tightening and then cutting away leftover materials, then placing the fixed ring on a piece of white smooth paper; cutting a UV film whose area is less than that of the fixed ring and pasting the UV film in the center of the blue film, then using rubber pusher to drive out bubbles between the UV film and the blue film; pasting the silicon-wafer side of a wafer in the center of the UV film, then reversing the fixed ring, laying a piece of clean smooth paper under the wafer, driving out the bubbles between the wafer and the UV film until the wafer is firmly pasted. The film pasting method of the invention adopts double-film wafer pasting method, i.e. pasting a layer of wafer-sized UV film on the original bottom film and pasting the wafer on the UV film, thus able to meet the requirement for film viscosity and extendibility and reduce the cost; after scribed, the silicon wafer is added with a layer of protective film and spread so that a large block of protective film can play the role in fixing a smaller UV film.

Description

technical field [0001] The invention relates to the field of optoelectronic information technology, in particular to a scribing method for flip-chip light-emitting diodes. Background technique [0002] Semiconductor lighting includes special lighting and general lighting, which will be the development direction of GaN-based ultra-brightness LEDs. To enable LEDs to be used in the lighting field, the first requirement is to increase their luminous flux, and more importantly, to improve their reliability. The easiest way to increase the luminous flux is to directly increase the chip size and increase the input current, but this will increase the requirements and difficulties for the back-end packaging. In order to overcome the above defects, a more effective method is to develop practical high-power, high-brightness LEDs from the growth technology of epitaxial wafers for power chips, the manufacturing technology of flip-chip high-power chips and substrate bonding. chip. [0...

AI Technical Summary

Problems solved by technology

However, the existing adhesive film technology cannot meet the company's requirements for scribing high-power chips. There are mainly the following defects: 1. When dicing with a dicing machine, the chip is completely soaked in water. Completely soaked in water, under the buoyancy of water, it is easy to separate from the membrane, causing the danger of broken knife

2. The shaft of the dicing machine rotates at a high speed of 30,000rps and needs to be rinsed with cooling water. Driven by the blade, the force of the water flow is very strong. It is difficult to ensure that the sliced ​​chips will not be washed away by the water and cause losses.

Although such a mucosal method is simple and practical, it is not suitable for expensive membranes, because the size of the wafer is only one-twentieth of the size of the stainless steel ring, that is to say, only one-twentieth of the entire membrane works. The waste of imported high-grade films such as ultraviolet films is obvious. In order to solve this technical problem, some improvements should be made to the bonding process

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