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Preparation method of nano multi-step height sample plate

A high-profile and step-height technology, applied in the field of micro-nano testing, can solve problems such as high cost and harsh processing conditions, and achieve the effects of low cost, diverse material selection, and reduced preparation difficulty

Inactive Publication Date: 2008-08-06
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Using microfabrication technology to prepare nano-scale single-step height templates depends on the development of plate-making technology, pattern transfer technology, etching technology, etc. These technologies have strict environmental requirements, harsh processing conditions, and high costs
For example, the German Institute of Physics and Technology thermally grows SiO on Si substrates. 2 thin film, with SiO 2 The thickness of the film is used as the nominal value of the nano-step height template, and the shape of the nano-step height template is etched with photolithography technology. The characteristic of this preparation method is that only a single-step height template can be prepared.

Method used

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  • Preparation method of nano multi-step height sample plate
  • Preparation method of nano multi-step height sample plate
  • Preparation method of nano multi-step height sample plate

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Embodiment Construction

[0022] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0023] see Figure 4 , the present invention includes a base silicon chip and alternately deposited on the base silicon chip made of Si 3 N 4 A stepped rectangular boss composed of a thin film and a Cr thin film.

[0024] The preparation method of the present invention is as follows:

[0025] 1) Clean the silicon wafers, immerse the silicon wafers in toluene, acetone, and deionized water for 10 minutes and ultrasonically clean them for 10 minutes. After each ultrasonic washing, wash them repeatedly with a large amount of deionized water, and finally dry them with nitrogen; then put the silicon wafers into Piranha Treat in the solution at 80°C for 60 minutes, take it out, rinse it thoroughly with a large amount of deionized water, and dry it with high-purity nitrogen; the Piranha solution contains 98% sulfuric acid and 30% hydrogen peroxide with a volume ra...

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Abstract

The invention relates to a nanometer multi-step height sample template and relative production / , wherein it transforms the thickness of film into the step height of said template, and controls its thickness to control the height of step, etches the step shape via dry and wet etching techniques to obtain the nanometer multi-step height sample template. Since the film preparation can realize Si3N4 film and Cr film at 10nm level, and the dry and wet etching techniques can etch multi-step shape, the invention can reduce the hardness of production, with low cost. The inventive product can be used to test and collect of scanning electric microscope, etc.

Description

technical field [0001] The invention belongs to the technical field of micro-nano testing, and in particular relates to a method for preparing a nanometer multi-step height template used for measuring the height of nanometer steps and non-real-time calibration of the height of steps in a nanometer metering system. Background technique [0002] The nanoscale multi-step height template and the preparation method thereof belong to the field of micro-nano measurement technology, and are widely used in the fields of semiconductor, flat panel display, high-density memory, precision instrument and precision machinery, ultra-precision processing and the like. Nano multi-step height templates can be used for nano-step height measurement, micro-nano line width control, film thickness measurement, and calibration and traceability of related nanometer measuring instruments. In the measurement of nano-step height, the nano-multi-step height template can provide a step height benchmark, t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01B11/00G01B9/04G01N13/10G01Q30/20
Inventor 景蔚萱蒋庄德赵凤霞朱明智韩国强
Owner XI AN JIAOTONG UNIV
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