Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Resin-sealed semiconductor device and method of manufacturing the same

A resin sealing and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of defective products and low yield of semiconductor device manufacturing.

Inactive Publication Date: 2008-08-13
SANYO ELECTRIC CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, lead wires are peeled off or adjacent lead wires come into contact with each other, and defective products may be produced, which constitutes a main cause of low manufacturing yield of semiconductor devices.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Resin-sealed semiconductor device and method of manufacturing the same
  • Resin-sealed semiconductor device and method of manufacturing the same
  • Resin-sealed semiconductor device and method of manufacturing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] 1 is a plan view of a semiconductor device 10 of Embodiment 1, figure 2 It is a cross-sectional view taken along line A-A in FIG. 1 . The semiconductor device 10 has an insulating base member 20 , a semiconductor chip 30 , a plurality of sheet members 40 , and a molding resin 50 . The semiconductor chip 30 and the plurality of sheet members 40 are provided on the insulating base member 20 and sealed with a mold resin 50 molded by transfer film molding. In addition, the mold resin 50 is omitted from the plan view of FIG. 1 .

[0036] Materials constituting the insulating base member 20 include thermosetting materials such as melamine dielectrics such as BT resin, liquid crystal polymers, epoxy resins, PPE resins, polyimide resins, fluororesins, phenol resins, and polyamide bismaleimide. resin. The insulating base member 20 may be either a single layer or a multilayer.

[0037] The electrode pad 32 of the semiconductor chip 30 is electrically connected to the wire ele...

Embodiment 2

[0043] FIG. 3 is a plan view of the semiconductor device 10 of the second embodiment. The molding resin 50 is also omitted in FIG. 3 . In the semiconductor device 10 of the second embodiment, the longitudinal directions of the plurality of chip members 40 provided corresponding to the sides of the semiconductor chips 30 are along the sides of the semiconductor chips 30 . Therefore, when the molding resin 50 is injected by the transfer film molding method, even if the flow of the molding resin 50 is arranged toward either side of the semiconductor device 10 before molding, the sheet member 40 can effectively shield the flow of the semiconductor device 10 . Therefore, the flow of the molding resin 50 of the sheet 30 can be suppressed from the lead flow of the metal bonding wire 30 of the semiconductor device 10 , and the connection failure of the metal bonding wire 34 can be reduced.

Embodiment 3

[0045] FIG. 4 is a plan view of the semiconductor device 10 of the third embodiment. The molding resin 50 is also omitted in FIG. 4 . In the semiconductor device 10 of the third embodiment, the plurality of sheet members 40 are arranged along the peripheral portion of the insulating base member 20 . The longitudinal direction of each sheet member 40 faces a certain direction. Even with such a structure, when the molding resin 50 is injected by transfer film molding, the semiconductor device 10 before molding can be arranged so that the longitudinal direction of the sheet member 40 facing a certain direction is perpendicular to the direction of the molding resin 50. In this way, the sheet member 40 effectively blocks the flow of the molded resin 50 to the semiconductor chip 30, so that the wire flow of the metal bonding wire 30 of the semiconductor device 10 can be suppressed, and the connection failure of the metal bonding wire 34 can be reduced.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A semiconductor pellet and chip components are provided on an insulating substrate, and are sealed with a molding resin that is molded by transfer molding. The chip components are positioned so as to surround the semiconductor pellet on all four sides. The lengthwise directions of the chip components surrounding the semiconductor pellet are aligned in a uniform direction. The insulating substrate is set within a die molding apparatus so that during resin injection, the lengthwise directions of the chip components are aligned substantially perpendicularly to the direction of flow of the injected resin.

Description

technical field [0001] The present invention relates to a semiconductor device, and more particularly, the present invention relates to a resin-sealed type semiconductor device in which a semiconductor chip and a chip member are sealed with a resin, and a method for manufacturing the same. Background technique [0002] Conventionally, there are known semiconductor devices in which sheet-like components such as semiconductor chips and resistors are sealed with a molding resin. As a method of injecting a molding resin, transfer film molding is known (for example, refer to Patent Document 1 and Patent Document 2). [0003] In the resin sealing process by the molding resin method, high pressure is applied to the sealing portion. Especially when the device is made ultra-thin, since the volume perpendicular to the flow direction of the injected resin is reduced, a higher pressure is applied to the sealing part. Due to the pressure of the injected molding resin, the bonding wires...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/28H01L23/31H01L21/56H01L21/44H01L25/065
CPCH01L24/45H01L23/3121H01L2924/01004H01L24/48H01L2924/01079H01L21/565H01L2224/48227H01L25/0655H01L24/49H01L2924/19041H01L2224/45144H01L2224/48091H01L2224/49171H01L2924/3025H01L2924/181H01L2224/05554H01L2924/00014H01L2924/00H01L2924/00012
Inventor 今冈俊一山口健臼井良辅渡辺裕之成瀬俊道加藤敦史
Owner SANYO ELECTRIC CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com