Semiconductor laser device and optical pickup apparatus having the device

Abstract

A semiconductor laser device has a semiconductor laser element, a starting mirror and a signal photodetector mounted on a surface of laminate ceramic package which is formed by layering a plurality of ceramic sheets having mutually different conductive patterns. The semiconductor laser device and an optical pickup apparatus having the device allow to eliminate the restrictions on arrangement of wire-bonded electrodes and wiring layout and to reduce the adverse effect of heat generated in the photodetector on the semiconductor laser element.

Description

[0001] This application claims the priority of Patent Application No. 2005-145468 filed in Japan on May 18, 2005 under Chapter 119(a) of Title 35 of the Code of the United States. Their disclosures are incorporated herein. technical field [0002] The present invention relates to an optical disc such as CD (miniature disc), CD-R (miniature disc that can be written only once), DVD (digital versatile disc) and DVD-R (digital versatile disc that can be written only once). A semiconductor laser device for reading information from a recording medium or writing information to an optical recording medium as described above. In addition, the present invention relates to an optical pickup device including the above-mentioned semiconductor laser device. Background technique [0003] In the progress toward miniaturization and thinning of semiconductor laser devices, the development of cheaper semiconductor laser devices has been expected. Conventionally, a semiconductor laser device ...

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Problems solved by technology

[0010] However, in the aforementioned conventional semiconductor laser device, since the metal wire 51 can only be wound two-dimensionally, there are certain restrictions on the arrangement of the pads (electrodes) to which the metal wire 51 is bonded or the wiring layout of the metal wire 51.

[0011] In addition, since the semiconductor laser element 57 is arranged on the silicon substrate 58 including the light receiving portion 56, the heat generated by the light receiving portion 56 will adversely affect the semiconductor laser element 57.

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