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Low voltage silicon controlled rectifier (SCR) for electrostatic discharge (ESD) protection on silicon-on-insulator technologies

An electrostatic discharge protection, integrated circuit technology, applied in the direction of semiconductor devices, semiconductor/solid-state device components, circuits, etc., can solve the problems of ESD device damage, heat consumption, etc., and achieve low trigger voltage, low power consumption, and low holding voltage. Effect

Active Publication Date: 2008-10-01
SOFICS BVBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, when an ESD event occurs, the heat generated at the ESD device (eg, SCR) cannot be dissipated by the substrate
Therefore, during an ESD event, an active area of ​​the ESD element experiences excessive heat, which can cause damage to the ESD device

Method used

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  • Low voltage silicon controlled rectifier (SCR) for electrostatic discharge (ESD) protection on silicon-on-insulator technologies
  • Low voltage silicon controlled rectifier (SCR) for electrostatic discharge (ESD) protection on silicon-on-insulator technologies
  • Low voltage silicon controlled rectifier (SCR) for electrostatic discharge (ESD) protection on silicon-on-insulator technologies

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Embodiment Construction

[0023] The process steps and structures described below do not form a complete process flow for fabricating integrated circuits (ICs). The present invention can be implemented in conjunction with silicon-on-insulator (SOI) integrated circuit fabrication techniques currently used in the art, and includes only a few generally implemented process steps necessary to understand the invention. The drawings showing the cross-section and layout of portions of the IC during fabrication are not drawn to scale, but rather are drawn in a manner to illustrate important features of the invention. In addition, where possible, the drawings illustratively include schematic diagrams of circuitry (eg, SCR circuitry) associated with P-type doped regions and N-type doped regions of integrated circuits.

[0024] The invention is described with reference to SOI CMOS devices. However, those skilled in the art will appreciate that by selecting different dopant types and adjusting the concentrations, ...

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Abstract

A silicon-on-insulator (SOI) electrostatic discharge (ESD) protection device that can protect very sensitive thin gate oxides by limiting the power dissiptation during the ESD event, which is best achieved by reducing the voltage drop across the active (protection) device during an ESD event. In one embodiment, the invention provides very low triggering and holding voltages. Furthermore, the SOI protection device of the present invention has low impedance and low power dissipation characteristics that reduce voltage build-up, and accordingly, enable designers to fabricate more area efficient protection device.

Description

[0001] cross reference case [0002] This application claims the benefit of US Provisional Application Serial No. 60 / 463,461, filed April 16, 2003, which is hereby incorporated by reference in its entirety. technical field [0003] The present invention relates generally to the field of electrostatic discharge (ESD) protection circuits, and more particularly, to ESD protection for silicon-on-insulator (SOI) technology. Background technique [0004] Integrated circuits (ICs) and other semiconductor devices are extremely sensitive to the high voltages that can be generated by contact ESD events. Therefore, electrostatic discharge (ESD) protection circuits are necessary for integrated circuits. An ESD event is usually caused by a discharge of high potential (typically several thousand volts) and results in a pulse of high current (several amperes) of short duration (typically 100 nanoseconds). Illustratively, an ESD event is generated in an IC by manual contact with a lead of...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/62
Inventor 柯尼里·克里斯汀·鲁斯菲利普·裘思维克马克斯·莫俊斯约翰·亚莫康-颂·特里恩罗素·莫恩柯恩·法海吉
Owner SOFICS BVBA