Ultrathin gate pole oxidation layer and its growing method

Abstract

This invention provides a gate oxidation layer including a multi-hole SiO2 film with uniform thickness and holes and a method applying an anode oxidation method of DC overlapping AC, taking deionized water as the electrolyte to form a super thin gating oxidation layer, which overlaps AC with a fixed frequency on the anode oxidized DC to adjust the field distribution in the electrolyte and the ions in it can get a chance to be re-distributed to get the super-thin gating oxidation layer by the DC overlapping AC anode oxidation method.

Description

【Technical field】 [0001] The invention relates to a semiconductor manufacturing method, in particular to a method for growing a silicon-based ultra-thin gate oxide layer. 【Background technique】 [0002] Since the 1980s, the gates of Metal Oxide Semiconductor (MOS) transistors are mainly made of silicon. However, as the size of integrated circuit components continues to shrink, the quality requirements for the gate oxide layer are becoming more and more stringent, which makes the research on the ultra-thin gate oxide layer manufacturing method develop rapidly. Currently, silicon-based metal oxide semiconductor manufacturing methods mainly include Rapid Thermal Oxidation, Nitrided Oxidation, Liquid Phase Deposition, and Anodic Oxidation. Among them, the gate oxide layer grown by the anodic oxidation method has higher uniformity than the oxide layer formed by other methods. [0003] The traditional anodic oxidation method for growing an oxide layer usually uses deionized wate...

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Problems solved by technology

[0006] In order to overcome the shortcomings of the gate oxide layer formed in the prior art, such as difficulty in improving uniformity and high leakage current, the purpose of the present invention is to provide an ultra-thin gate oxide layer with higher growth uniformity and low leakage current. method

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