Linear magnetic field sensor and its mfg. method
The technology of a magnetic field sensor and its manufacturing method is applied in the direction of the size/direction of the magnetic field, devices using electro-magnetic effects, and the manufacturing/processing of electromagnetic devices, which can solve the problems of complex preparation process, difficulty in ensuring product consistency, and increase in Problems such as the difficulty of sensor production, to achieve the effect of simplifying the preparation process and improving consistency
Inactive Publication Date: 2008-12-10
INST OF PHYSICS - CHINESE ACAD OF SCI
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Nevertheless, in order for the output signal to have a linear relationship with the external magnetic field, the directions of the pinning layers of two of the four spin-valve elements in the bridge-type magnetic sensor designed by Daughton et al. The direction of the top tie layer is opposite. In order to achieve this purpose, some of the manufacturing processes use the current bias method, some use the permanent magnet bias method, and some use the secondary deposition method. These preparation processes are more complicated and increase It increases the difficulty of making the sensor, and more importantly, it is difficult to guarantee the consistency of the product
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[0014] Such as figure 2 As shown, the fabrication method of the junction linear magnetic field sensor: replace the mask in situ in the main sputtering chamber when depositing the non-magnetic layer, that is, use the mask to block the holes of the non-magnetic layer on the first and third tunnel junctions 1 and 3 during deposition. Sputtering causes the thickness of the nonmagnetic layer on the first and third tunnel junctions 1 and 3 to be thinner, and then removes the mask and sputters the rest of the tunnel junction materials.
[0015] Such as figure 1 As shown, the sensors with non-magnetic layers with different thicknesses prepared by the above method include: a film base and 4 tunnel junctions formed on the film base, wherein the first and third tunnel junctions 1 and 3 are exactly the same, and the first and third tunnel junctions are exactly the same. 2 and 4 tunnel junctions 2 and 4 are exactly the same, the thickness of the non-magnetic layer of the 1st and 3rd tunn...
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The invention discloses a tunnel junction linear magnetic field sensor and a manufacturing method thereof: when depositing a non-magnetic layer, the mask is replaced in situ in the main sputtering chamber, that is, the mask is used to block the first and third spin valve elements during deposition. Or the sputtering of the non-magnetic layer on the 2nd and 4th spin valve elements causes the thickness of the non-magnetic layer on the 1st and 3rd spin valve elements or the 2nd and 4th spin valve elements to be thinner or thicker, and then take it out Remove the mask and sputter on the remaining spin valve element material. The present invention can realize that the direction of the pinning layer of two of the four spin valve elements in the bridge magnetic sensor is opposite to the direction of the top pinning layer of the other two spin valve elements in one deposition, so that the sensor can be externally connected. The linear induction of the magnetic field does not require the current bias method or the permanent magnet bias method, which greatly simplifies the preparation process and can effectively improve the consistency of the product.
Description
technical field [0001] The invention relates to a sensing device and a manufacturing method thereof, in particular to a digital magnetic field sensor with a tunnel junction resistance element or a giant magnetoresistance element and a manufacturing method thereof. Background technique [0002] One of the technical problems that must be overcome in linear magnetic sensors is how to make the output signal linear in relation to the external magnetic field. The most widely used linear magnetic field sensor is the Hall magnetic field sensor, which is based on the Hall effect. Its material properties The inherent characteristic of the sensor is that the output signal has a linear relationship with the external magnetic field, but the output signal of the Hall magnetic field sensor to a weak magnetic field is very small, so it is generally used to sense a larger magnetic field in the range of 100 to 1000 Oersted (Oe). This kind of MR magnetic field sensor is based on the anisotropi...
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IPC IPC(8): G01R33/06H01L43/00H01L43/12H10N50/01
Inventor 王磊韩秀峰李飞飞姜丽仙张谢群詹文山
Owner INST OF PHYSICS - CHINESE ACAD OF SCI