Off-axis sputtering control method for improving thickness uniformity of film

Abstract

The invention discloses an off-axis sputtering controlling method to improve film thickness evenness, which is characterized by the following: adopting round flat target 2 to splash the film; making base 1 eccentric for target 2; making 1 or 2 self-rotate around its center; adjusting thickness evenness of film through target base distance h and eccentric distance D; making the section of etching ring 3 as U-shape or similar rectangle; setting the splashing pressure lower than 5Pa; controlling the optimizing rate of h and D at D=3+0.7r1+0.3r2+(2 / 3+-0.1) .h, wherein r1 and r2 is inner and outer radius of etching ring 3 on the target 2. The invention can splash the eccentric shaft, which affirms the proportional relationship of target base distance h-eccentric distance D.

Description

technical field [0001] The invention relates to the technical field of thin film preparation, in particular to an off-axis sputtering control method for improving film thickness uniformity. Background technique [0002] Most films must meet some degree of thickness uniformity when they are applied. Sputtering is a commonly used thin film preparation method. In order to improve the uniformity of film thickness, it is usually based on the shape of the sputtering target (plane circular target, rectangular target, facing target, hollow cathode target, etc.), using a suitable substrate- Target relative motion method, and optimize the relative geometric orientation and distance of substrate and target. [0003] For circular planar sputtering targets, the method of substrate rotation or planetary rotation relative to the target is usually used to improve the thickness uniformity of the film. Such as figure 1 As shown, the geometric layout when the substrate 1 is parallel to the ...

AI Technical Summary

Problems solved by technology

However, in the above literature, only a few examples are shown, and it does not summarize the relationship between the target base distance h and the eccentricity D from an overall point of view in order to obtain the best film thickness distribution

[0005] Japanese Patent Laid-Open No. 4183856 authorized in 1992 discloses a sputtering device for preparing functionally gradient films, which is essentially an off-axis sputtering device with a shielding plate, and there is no possibility of adjusting the base distance h and eccentricity D of the target. Tonality is specified

The Chinese patent ZL98800979.X authorized in 2004 discloses a monolithic magnetron sputtering device, which is essentially a method for realizing off-axis sputtering. The base distance h of the target is adjustable, and the eccentricity D is adjustable Tonality not specified

However, it takes a lot of time to find out the best combination of these parameters experimentally, and these optimized process parameters are not universal. When the sputtering device is changed, it needs to be explored again, which is time-consuming and labor-intensive.

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